IT8883660A0 - Formazione di contatti sub-micrometrici mediante pilastri conduttori preformati sul wafer e planarizzati - Google Patents

Formazione di contatti sub-micrometrici mediante pilastri conduttori preformati sul wafer e planarizzati

Info

Publication number
IT8883660A0
IT8883660A0 IT8883660A IT8366088A IT8883660A0 IT 8883660 A0 IT8883660 A0 IT 8883660A0 IT 8883660 A IT8883660 A IT 8883660A IT 8366088 A IT8366088 A IT 8366088A IT 8883660 A0 IT8883660 A0 IT 8883660A0
Authority
IT
Italy
Prior art keywords
micrometric
planarized
preformed
wafer
contacts
Prior art date
Application number
IT8883660A
Other languages
English (en)
Other versions
IT1225618B (it
Inventor
Fabio Gualandris
Andrea Marmiroli
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8883660A priority Critical patent/IT1225618B/it
Publication of IT8883660A0 publication Critical patent/IT8883660A0/it
Priority to EP89830379A priority patent/EP0364409A1/en
Priority to JP1239790A priority patent/JPH02114549A/ja
Application granted granted Critical
Publication of IT1225618B publication Critical patent/IT1225618B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
IT8883660A 1988-09-14 1988-09-14 Formazione di contatti sub-micrometrici mediante pilastri conduttori preformati sul wafer e planarizzati IT1225618B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT8883660A IT1225618B (it) 1988-09-14 1988-09-14 Formazione di contatti sub-micrometrici mediante pilastri conduttori preformati sul wafer e planarizzati
EP89830379A EP0364409A1 (en) 1988-09-14 1989-09-06 Formation of submicron contacts by means of conducting pillars formed on the wafer and planarized
JP1239790A JPH02114549A (ja) 1988-09-14 1989-09-14 ウエファ上に形成されプレナー化された導電性ピラーによるサブミクロン接点の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8883660A IT1225618B (it) 1988-09-14 1988-09-14 Formazione di contatti sub-micrometrici mediante pilastri conduttori preformati sul wafer e planarizzati

Publications (2)

Publication Number Publication Date
IT8883660A0 true IT8883660A0 (it) 1988-09-14
IT1225618B IT1225618B (it) 1990-11-22

Family

ID=11323709

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8883660A IT1225618B (it) 1988-09-14 1988-09-14 Formazione di contatti sub-micrometrici mediante pilastri conduttori preformati sul wafer e planarizzati

Country Status (3)

Country Link
EP (1) EP0364409A1 (it)
JP (1) JPH02114549A (it)
IT (1) IT1225618B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02281736A (ja) * 1989-04-24 1990-11-19 Sony Corp 多層配線形成方法
DE69211329T2 (de) * 1992-03-27 1996-11-28 Ibm Verfahren zum Herstellen von pseudo-planaren Dünnschicht PFET-Anordnungen und hierdurch erzeugte Struktur
JP2017131179A (ja) * 2016-01-29 2017-08-03 Ｋｙｂ株式会社 ブーム変位装置及びブームスプレーヤ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8316476D0 (en) * 1983-06-16 1983-07-20 Plessey Co Plc Producing layered structure

Also Published As

Publication number Publication date
IT1225618B (it) 1990-11-22
EP0364409A1 (en) 1990-04-18
JPH02114549A (ja) 1990-04-26

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970929