IT8622731A0 - Dispositivo elettronico integrato, in particolre dispositivo cmos, eprocedimento per la sua fabbricazione con segregazione delle impurita' metalliche. - Google Patents

Dispositivo elettronico integrato, in particolre dispositivo cmos, eprocedimento per la sua fabbricazione con segregazione delle impurita' metalliche.

Info

Publication number
IT8622731A0
IT8622731A0 IT8622731A IT2273186A IT8622731A0 IT 8622731 A0 IT8622731 A0 IT 8622731A0 IT 8622731 A IT8622731 A IT 8622731A IT 2273186 A IT2273186 A IT 2273186A IT 8622731 A0 IT8622731 A0 IT 8622731A0
Authority
IT
Italy
Prior art keywords
segregation
procedure
manufacture
integrated electronic
electronic device
Prior art date
Application number
IT8622731A
Other languages
English (en)
Other versions
IT1213563B (it
Inventor
Gianfranco Cerofolini
Maria Luisa Polignano
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT8622731A priority Critical patent/IT1213563B/it
Publication of IT8622731A0 publication Critical patent/IT8622731A0/it
Priority to DE87117453T priority patent/DE3786763T2/de
Priority to EP87117453A priority patent/EP0271749B1/en
Priority to JP62320040A priority patent/JPS63164325A/ja
Application granted granted Critical
Publication of IT1213563B publication Critical patent/IT1213563B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT8622731A 1986-12-17 1986-12-17 Dispositivo elettronico integrato, in particolre dispositivo cmos, eprocedimento per la sua fabbricazione con segregazione delle impurita' metalliche. IT1213563B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT8622731A IT1213563B (it) 1986-12-17 1986-12-17 Dispositivo elettronico integrato, in particolre dispositivo cmos, eprocedimento per la sua fabbricazione con segregazione delle impurita' metalliche.
DE87117453T DE3786763T2 (de) 1986-12-17 1987-11-26 Verfahren zur Herstellung einer integrierten elektronischen Schaltung, ins besondere eines CMOS-Bauelementes, das die Absonderung metallischer Verunreinigungen umfasst.
EP87117453A EP0271749B1 (en) 1986-12-17 1987-11-26 Process for the manufacture of an integrated electronic device, in particular a cmos device, with segregation of metallic impurities
JP62320040A JPS63164325A (ja) 1986-12-17 1987-12-16 集積電子装置および金属不純物を分離する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8622731A IT1213563B (it) 1986-12-17 1986-12-17 Dispositivo elettronico integrato, in particolre dispositivo cmos, eprocedimento per la sua fabbricazione con segregazione delle impurita' metalliche.

Publications (2)

Publication Number Publication Date
IT8622731A0 true IT8622731A0 (it) 1986-12-17
IT1213563B IT1213563B (it) 1989-12-20

Family

ID=11199775

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8622731A IT1213563B (it) 1986-12-17 1986-12-17 Dispositivo elettronico integrato, in particolre dispositivo cmos, eprocedimento per la sua fabbricazione con segregazione delle impurita' metalliche.

Country Status (4)

Country Link
EP (1) EP0271749B1 (it)
JP (1) JPS63164325A (it)
DE (1) DE3786763T2 (it)
IT (1) IT1213563B (it)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138034A (ja) * 1982-02-12 1983-08-16 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0271749A3 (en) 1989-01-11
DE3786763D1 (de) 1993-09-02
DE3786763T2 (de) 1993-10-28
JPS63164325A (ja) 1988-07-07
EP0271749A2 (en) 1988-06-22
EP0271749B1 (en) 1993-07-28
IT1213563B (it) 1989-12-20

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227