IT8447900A0 - NOT BY MEANS OF LASER PULSES IMPROVEMENT IN THE PROCEDURES OF REARORDING OF CRYSTALLINE STRUCTURES IN ALLOY OR SEMICONDUCTORS - Google Patents

NOT BY MEANS OF LASER PULSES IMPROVEMENT IN THE PROCEDURES OF REARORDING OF CRYSTALLINE STRUCTURES IN ALLOY OR SEMICONDUCTORS

Info

Publication number
IT8447900A0
IT8447900A0 IT8447900A IT4790084A IT8447900A0 IT 8447900 A0 IT8447900 A0 IT 8447900A0 IT 8447900 A IT8447900 A IT 8447900A IT 4790084 A IT4790084 A IT 4790084A IT 8447900 A0 IT8447900 A0 IT 8447900A0
Authority
IT
Italy
Prior art keywords
rearording
semiconductors
procedures
alloy
improvement
Prior art date
Application number
IT8447900A
Other languages
Italian (it)
Other versions
IT1205350B (en
Inventor
Vitali Gianfranco
Original Assignee
Vitali Gianfranco
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vitali Gianfranco filed Critical Vitali Gianfranco
Priority to IT47900/84A priority Critical patent/IT1205350B/en
Publication of IT8447900A0 publication Critical patent/IT8447900A0/en
Priority to DE3510204A priority patent/DE3510204C2/en
Application granted granted Critical
Publication of IT1205350B publication Critical patent/IT1205350B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
IT47900/84A 1984-03-21 1984-03-21 IMPROVEMENT OF CRYSTALLINE STRUCTURES IN SEMICONDUCTORS IN ALLOY OR NOT BY LASER IMPULSES IT1205350B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT47900/84A IT1205350B (en) 1984-03-21 1984-03-21 IMPROVEMENT OF CRYSTALLINE STRUCTURES IN SEMICONDUCTORS IN ALLOY OR NOT BY LASER IMPULSES
DE3510204A DE3510204C2 (en) 1984-03-21 1985-03-21 Improved process for reordering crystalline structures in alloyed or non-alloyed semiconductors using laser pulses

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT47900/84A IT1205350B (en) 1984-03-21 1984-03-21 IMPROVEMENT OF CRYSTALLINE STRUCTURES IN SEMICONDUCTORS IN ALLOY OR NOT BY LASER IMPULSES

Publications (2)

Publication Number Publication Date
IT8447900A0 true IT8447900A0 (en) 1984-03-21
IT1205350B IT1205350B (en) 1989-03-15

Family

ID=11263227

Family Applications (1)

Application Number Title Priority Date Filing Date
IT47900/84A IT1205350B (en) 1984-03-21 1984-03-21 IMPROVEMENT OF CRYSTALLINE STRUCTURES IN SEMICONDUCTORS IN ALLOY OR NOT BY LASER IMPULSES

Country Status (2)

Country Link
DE (1) DE3510204C2 (en)
IT (1) IT1205350B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19904082A1 (en) * 1999-02-02 2000-08-03 Agfa Gevaert Ag Process for the production of solar cells

Also Published As

Publication number Publication date
DE3510204A1 (en) 1985-10-03
DE3510204C2 (en) 1996-11-07
IT1205350B (en) 1989-03-15

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960306