IT8420489A0 - Cella a transistor elettricamente programmabile per memorie elettroniche. - Google Patents

Cella a transistor elettricamente programmabile per memorie elettroniche.

Info

Publication number
IT8420489A0
IT8420489A0 IT8420489A IT2048984A IT8420489A0 IT 8420489 A0 IT8420489 A0 IT 8420489A0 IT 8420489 A IT8420489 A IT 8420489A IT 2048984 A IT2048984 A IT 2048984A IT 8420489 A0 IT8420489 A0 IT 8420489A0
Authority
IT
Italy
Prior art keywords
electrically programmable
transistor cell
electronic memories
programmable transistor
memories
Prior art date
Application number
IT8420489A
Other languages
English (en)
Other versions
IT1176010B (it
Inventor
Paul Denham
Original Assignee
Semi Processes Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semi Processes Inc filed Critical Semi Processes Inc
Publication of IT8420489A0 publication Critical patent/IT8420489A0/it
Application granted granted Critical
Publication of IT1176010B publication Critical patent/IT1176010B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
IT20489/84A 1983-04-11 1984-04-11 Cella a transistor elettricamente programmabile per memorie elettroniche IT1176010B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48377883A 1983-04-11 1983-04-11

Publications (2)

Publication Number Publication Date
IT8420489A0 true IT8420489A0 (it) 1984-04-11
IT1176010B IT1176010B (it) 1987-08-12

Family

ID=23921492

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20489/84A IT1176010B (it) 1983-04-11 1984-04-11 Cella a transistor elettricamente programmabile per memorie elettroniche

Country Status (4)

Country Link
EP (1) EP0142516A1 (it)
JP (1) JPS60501187A (it)
IT (1) IT1176010B (it)
WO (1) WO1984004197A1 (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4311388B4 (de) * 1993-04-07 2005-07-28 Forschungszentrum Jülich GmbH Schichtsystem mit elektrisch aktivierbarer Schicht
US7986005B2 (en) * 2007-07-27 2011-07-26 Infineon Technologies Austria Ag Short circuit limiting in power semiconductor devices
CN112908851B (zh) * 2019-12-03 2022-04-15 苏州东微半导体股份有限公司 半导体功率器件的制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4161039A (en) * 1976-12-15 1979-07-10 Siemens Aktiengesellschaft N-Channel storage FET
JPS5567161A (en) * 1978-11-14 1980-05-21 Seiko Epson Corp Semiconductor memory storage

Also Published As

Publication number Publication date
JPS60501187A (ja) 1985-07-25
EP0142516A1 (en) 1985-05-29
IT1176010B (it) 1987-08-12
WO1984004197A1 (en) 1984-10-25

Similar Documents

Publication Publication Date Title
JPS5752171A (en) Electrically changeable non-volatile semiconductor memory cell
DE3279855D1 (en) Nonvolatile semiconductor memory circuit
JPS5715470A (en) Electrically programmable/erasable mos memory cell
GB8322568D0 (en) Nonvolatile memory
DE3174858D1 (en) Nonvolatile semiconductor memory device
IT8319579A0 (it) Memoria a semiconduttori.
GB1543659A (en) Integrated fet memory cells
JPS5310228A (en) Redundancy memory circuit for memory array
JPS55160471A (en) Programmable semiconductor memory cell
DE3071124D1 (en) Nonvolatile semiconductor memory circuits
DE3174621D1 (de) Non-volatile, programmable integrated semiconductor memory cell
GB2089612B (en) Nonvolatile semiconductor memory device
EP0048814A3 (en) Non-volatile semiconductor memory cell
DE3176751D1 (en) Semiconductor memory with improved data programming time
JPS5346012A (en) Programmable memory system for electronic instrument
DE3470439D1 (en) A nonvolatile semiconductor memory device
IL67405A0 (en) Electrically programmable nonvolatile memory
JPS53108247A (en) Electrically programmable floating gate semiconductor memory
DE3176549D1 (en) Nonvolatile semiconductor memory device
DE3484830D1 (de) Fensteradressierbare speicherschaltung.
DE3484274D1 (de) Programmierbare halbleiterspeicheranordnung.
IT8420489A0 (it) Cella a transistor elettricamente programmabile per memorie elettroniche.
EP0214705A3 (en) Semiconductor memory with improvend data programming time
GB8319704D0 (en) Data memory arrangement
IT8221574A0 (it) Dispositivo elettronico a stadio di uscita in controfase particolarmente per l'associazione a memorie di sola lettura elettricamente programmabili.