IT8219003A0 - Procedimento per produrre foglie di silicio policristallino sinterizzato. - Google Patents

Procedimento per produrre foglie di silicio policristallino sinterizzato.

Info

Publication number
IT8219003A0
IT8219003A0 IT8219003A IT1900382A IT8219003A0 IT 8219003 A0 IT8219003 A0 IT 8219003A0 IT 8219003 A IT8219003 A IT 8219003A IT 1900382 A IT1900382 A IT 1900382A IT 8219003 A0 IT8219003 A0 IT 8219003A0
Authority
IT
Italy
Prior art keywords
procedure
polycrystalline silicon
producing sintered
sintered polycrystalline
silicon leaves
Prior art date
Application number
IT8219003A
Other languages
English (en)
Other versions
IT1157901B (it
IT8219003A1 (it
Inventor
Leopold Hanke
Hans Hellebrand
Helmut Schmelz
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IT8219003A0 publication Critical patent/IT8219003A0/it
Publication of IT8219003A1 publication Critical patent/IT8219003A1/it
Application granted granted Critical
Publication of IT1157901B publication Critical patent/IT1157901B/it

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00Single-crystal growth directly from the solid state
    • C30B1/02Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Silicon Compounds (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Photovoltaic Devices (AREA)
IT19003/82A 1981-01-13 1982-01-05 Procedimento per produrre foglie di silicio policristallino sinterizzato IT1157901B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813100776 DE3100776A1 (de) 1981-01-13 1981-01-13 Verfahren zur herstellung von folien aus gesintertem polykristallinen silizium

Publications (3)

Publication Number Publication Date
IT8219003A0 true IT8219003A0 (it) 1982-01-05
IT8219003A1 IT8219003A1 (it) 1983-07-05
IT1157901B IT1157901B (it) 1987-02-18

Family

ID=6122514

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19003/82A IT1157901B (it) 1981-01-13 1982-01-05 Procedimento per produrre foglie di silicio policristallino sinterizzato

Country Status (5)

Country Link
US (1) US4407858A (it)
JP (1) JPS57135709A (it)
DE (1) DE3100776A1 (it)
FR (1) FR2497836B1 (it)
IT (1) IT1157901B (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2016457C (en) * 1989-09-29 2001-12-18 Gary Mats Renlund Moldable ceramic composition and process for fine diameter ceramic fibers
US5576248A (en) * 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
US5559057A (en) * 1994-03-24 1996-09-24 Starfire Electgronic Development & Marketing Ltd. Method for depositing and patterning thin films formed by fusing nanocrystalline precursors
JPH11260721A (ja) * 1998-03-13 1999-09-24 Toshiba Corp 多結晶薄膜シリコン層の形成方法および太陽光発電素子
US6638491B2 (en) * 2001-09-21 2003-10-28 Neptec Optical Solutions, Inc. Method of producing silicon metal particulates of reduced average particle size
FR2832253B1 (fr) * 2001-11-12 2005-05-27 Michelis Quiriconi Raymond De Cellule solaire a base de (se) (si) iridium appauvri
US7879696B2 (en) * 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
WO2008060704A2 (en) * 2006-06-02 2008-05-22 Innovalight, Inc. Photoactive materials containing group iv nanostructures and optoelectronic devices made therefrom
WO2008030966A1 (en) * 2006-09-07 2008-03-13 Innovalight, Inc. Semiconductor thin films formed from group iv nanoparticles
EP2089897A2 (en) * 2006-12-07 2009-08-19 Innovalight, Inc. Methods for creating a densified group iv semiconductor nanoparticle thin film
US7718707B2 (en) * 2006-12-21 2010-05-18 Innovalight, Inc. Method for preparing nanoparticle thin films
EP2140483A1 (en) * 2007-04-04 2010-01-06 Innovalight, Inc. Methods for optimizing thin film formation with reactive gases
WO2009028974A1 (en) * 2007-08-31 2009-03-05 Faculdade De Ciências Da Universidade De Lisboa Method for the production of semiconductor ribbons from a gaseous feedstock
US7851336B2 (en) * 2008-03-13 2010-12-14 Innovalight, Inc. Method of forming a passivated densified nanoparticle thin film on a substrate
US8247312B2 (en) * 2008-04-24 2012-08-21 Innovalight, Inc. Methods for printing an ink on a textured wafer surface
GB0919830D0 (en) * 2009-11-12 2009-12-30 Isis Innovation Preparation of silicon for fast generation of hydrogen through reaction with water
GB201217525D0 (en) 2012-10-01 2012-11-14 Isis Innovation Composition for hydrogen generation
DE102017221724A1 (de) 2017-12-01 2019-06-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von polykristallinem Silizium

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2904613A (en) * 1957-08-26 1959-09-15 Hoffman Electronics Corp Large area solar energy converter and method for making the same
US4173494A (en) * 1977-02-14 1979-11-06 Jack S. Kilby Glass support light energy converter
DE2927086C2 (de) * 1979-07-04 1987-02-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von platten- oder bandförmigen Siliziumkristallkörpern mit Säulenstruktur für Solarzellen

Also Published As

Publication number Publication date
FR2497836A1 (fr) 1982-07-16
FR2497836B1 (fr) 1986-02-21
JPS57135709A (en) 1982-08-21
DE3100776A1 (de) 1982-08-12
IT1157901B (it) 1987-02-18
IT8219003A1 (it) 1983-07-05
US4407858A (en) 1983-10-04

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