IT7927738A0 - Dispositivo a barriera di schottkyperfezionato. - Google Patents

Dispositivo a barriera di schottkyperfezionato.

Info

Publication number
IT7927738A0
IT7927738A0 IT7927738A IT2773879A IT7927738A0 IT 7927738 A0 IT7927738 A0 IT 7927738A0 IT 7927738 A IT7927738 A IT 7927738A IT 2773879 A IT2773879 A IT 2773879A IT 7927738 A0 IT7927738 A0 IT 7927738A0
Authority
IT
Italy
Prior art keywords
schottky barrier
barrier device
improved schottky
improved
schottky
Prior art date
Application number
IT7927738A
Other languages
English (en)
Other versions
IT1165391B (it
Inventor
Richard Ford Dreves
John Frank Fresia
Sang Uk Kim
John James Lajza Jr
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25513652&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT7927738(A0) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Ibm filed Critical Ibm
Publication of IT7927738A0 publication Critical patent/IT7927738A0/it
Application granted granted Critical
Publication of IT1165391B publication Critical patent/IT1165391B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
IT27738/79A 1978-12-11 1979-11-30 Dispositivo a barriera di schottky perfezionato IT1165391B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/968,052 US4261095A (en) 1978-12-11 1978-12-11 Self aligned schottky guard ring

Publications (2)

Publication Number Publication Date
IT7927738A0 true IT7927738A0 (it) 1979-11-30
IT1165391B IT1165391B (it) 1987-04-22

Family

ID=25513652

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27738/79A IT1165391B (it) 1978-12-11 1979-11-30 Dispositivo a barriera di schottky perfezionato

Country Status (5)

Country Link
US (1) US4261095A (it)
EP (1) EP0012220A1 (it)
JP (1) JPS5950233B2 (it)
CA (1) CA1123121A (it)
IT (1) IT1165391B (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414737A (en) * 1981-01-30 1983-11-15 Tokyo Shibaura Denki Kabushiki Kaisha Production of Schottky barrier diode
DE3124572A1 (de) * 1981-06-23 1982-12-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von schottky-dioden
US4441931A (en) * 1981-10-28 1984-04-10 Bell Telephone Laboratories, Incorporated Method of making self-aligned guard regions for semiconductor device elements
US4545114A (en) * 1982-09-30 1985-10-08 Fujitsu Limited Method of producing semiconductor device
US4533933A (en) * 1982-12-07 1985-08-06 The United States Of America As Represented By The Secretary Of The Air Force Schottky barrier infrared detector and process
US4531055A (en) * 1983-01-05 1985-07-23 The United States Of America As Represented By The Secretary Of The Air Force Self-guarding Schottky barrier infrared detector array
US4638345A (en) * 1983-06-01 1987-01-20 Rca Corporation IR imaging array and method of making same
DE3576766D1 (de) * 1984-10-26 1990-04-26 Siemens Ag Schottky-kontakt auf einer halbleiteroberflaeche und verfahren zu dessen herstellung.
US4667395A (en) * 1985-03-29 1987-05-26 International Business Machines Corporation Method for passivating an undercut in semiconductor device preparation
US4669178A (en) * 1986-05-23 1987-06-02 International Business Machines Corporation Process for forming a self-aligned low resistance path in semiconductor devices
US5192993A (en) * 1988-09-27 1993-03-09 Kabushiki Kaisha Toshiba Semiconductor device having improved element isolation area
JP3023853B2 (ja) * 1990-08-23 2000-03-21 富士通株式会社 半導体装置の製造方法
US5270256A (en) * 1991-11-27 1993-12-14 Intel Corporation Method of forming a guard wall to reduce delamination effects
US5859450A (en) * 1997-09-30 1999-01-12 Intel Corporation Dark current reducing guard ring
WO1999062112A1 (de) * 1998-05-26 1999-12-02 Infineon Technologies Ag Verfahren zur herstellung von schottky-dioden
US6121122A (en) 1999-05-17 2000-09-19 International Business Machines Corporation Method of contacting a silicide-based schottky diode
US6699775B2 (en) * 2000-02-22 2004-03-02 International Rectifier Corporation Manufacturing process for fast recovery diode
DE10330838B4 (de) 2003-07-08 2005-08-25 Infineon Technologies Ag Elektronisches Bauelement mit Schutzring
US20050275057A1 (en) * 2004-06-15 2005-12-15 Breen Marc L Schottky diode with dielectric isolation
US20060076639A1 (en) * 2004-10-13 2006-04-13 Lypen William J Schottky diodes and methods of making the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1265017A (it) * 1968-08-19 1972-03-01
JPS4826188B1 (it) * 1968-10-04 1973-08-07
US3616380A (en) * 1968-11-22 1971-10-26 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture
US3742315A (en) * 1971-10-18 1973-06-26 Matsushita Electronics Corp Schottky barrier type semiconductor device with improved backward breakdown voltage characteristic
US4026740A (en) * 1975-10-29 1977-05-31 Intel Corporation Process for fabricating narrow polycrystalline silicon members
US4063964A (en) * 1976-12-27 1977-12-20 International Business Machines Corporation Method for forming a self-aligned schottky barrier device guardring

Also Published As

Publication number Publication date
JPS5580367A (en) 1980-06-17
CA1123121A (en) 1982-05-04
JPS5950233B2 (ja) 1984-12-07
EP0012220A1 (de) 1980-06-25
IT1165391B (it) 1987-04-22
US4261095A (en) 1981-04-14

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