IT7925852A0 - Cella di memoria tagliata mediante laser. - Google Patents

Cella di memoria tagliata mediante laser.

Info

Publication number
IT7925852A0
IT7925852A0 IT7925852A IT2585279A IT7925852A0 IT 7925852 A0 IT7925852 A0 IT 7925852A0 IT 7925852 A IT7925852 A IT 7925852A IT 2585279 A IT2585279 A IT 2585279A IT 7925852 A0 IT7925852 A0 IT 7925852A0
Authority
IT
Italy
Prior art keywords
laser
memory cell
cell cut
cut
memory
Prior art date
Application number
IT7925852A
Other languages
English (en)
Other versions
IT1165312B (it
Inventor
John Bula
Claude L Bertin
Larry C Martin
Thomas A Williams
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7925852A0 publication Critical patent/IT7925852A0/it
Application granted granted Critical
Publication of IT1165312B publication Critical patent/IT1165312B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
IT25852/79A 1978-10-24 1979-09-20 Cella di memoria tagliata mediante laser IT1165312B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/954,947 US4198696A (en) 1978-10-24 1978-10-24 Laser cut storage cell

Publications (2)

Publication Number Publication Date
IT7925852A0 true IT7925852A0 (it) 1979-09-20
IT1165312B IT1165312B (it) 1987-04-22

Family

ID=25496150

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25852/79A IT1165312B (it) 1978-10-24 1979-09-20 Cella di memoria tagliata mediante laser

Country Status (5)

Country Link
US (1) US4198696A (it)
EP (1) EP0010139B1 (it)
JP (1) JPS586240B2 (it)
DE (1) DE2965440D1 (it)
IT (1) IT1165312B (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584969A (ja) * 1981-06-30 1983-01-12 Fujitsu Ltd 半導体装置
JP2793232B2 (ja) * 1989-03-17 1998-09-03 株式会社東芝 イオンビームによる配線の切断および接続に適した半導体装置
FR2697673B1 (fr) * 1992-10-29 1994-12-16 Gemplus Card Int Circuit à fusible, pour circuit intégré.
US5807791A (en) * 1995-02-22 1998-09-15 International Business Machines Corporation Methods for fabricating multichip semiconductor structures with consolidated circuitry and programmable ESD protection for input/output nodes
US5703747A (en) * 1995-02-22 1997-12-30 Voldman; Steven Howard Multichip semiconductor structures with interchip electrostatic discharge protection, and fabrication methods therefore
US6433403B1 (en) * 1999-04-21 2002-08-13 Micron Technology, Inc. Integrated circuit having temporary conductive path structure and method for forming the same
US7316934B2 (en) * 2000-12-18 2008-01-08 Zavitan Semiconductors, Inc. Personalized hardware
US9202554B2 (en) 2014-03-13 2015-12-01 International Business Machines Corporation Methods and circuits for generating physically unclonable function
US10749019B2 (en) * 2018-07-03 2020-08-18 Semiconductor Components Industries, Llc Circuit and electronic device including an enhancement-mode transistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1499444A (fr) * 1966-09-16 1967-10-27 Constr Telephoniques Matrice de circuits logiques intégrés
GB1209271A (en) * 1967-02-27 1970-10-21 Hitachi Ltd Improvements in semiconductor devices
US3584183A (en) * 1968-10-03 1971-06-08 North American Rockwell Laser encoding of diode arrays
US3740523A (en) * 1971-12-30 1973-06-19 Bell Telephone Labor Inc Encoding of read only memory by laser vaporization
US3777216A (en) * 1972-10-02 1973-12-04 Motorola Inc Avalanche injection input protection circuit
JPS5041479A (it) * 1973-08-18 1975-04-15
US3914855A (en) * 1974-05-09 1975-10-28 Bell Telephone Labor Inc Methods for making MOS read-only memories
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element

Also Published As

Publication number Publication date
EP0010139A1 (de) 1980-04-30
JPS5558895A (en) 1980-05-01
JPS586240B2 (ja) 1983-02-03
EP0010139B1 (de) 1983-05-18
DE2965440D1 (en) 1983-07-07
IT1165312B (it) 1987-04-22
US4198696A (en) 1980-04-15

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