IT202200005363A1 - Formazione di un dispositivo elettronico, quale un diodo jbs o mps, basato su 3c-sic, e dispositivo elettronico in 3c-sic - Google Patents

Formazione di un dispositivo elettronico, quale un diodo jbs o mps, basato su 3c-sic, e dispositivo elettronico in 3c-sic Download PDF

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Publication number
IT202200005363A1
IT202200005363A1 IT102022000005363A IT202200005363A IT202200005363A1 IT 202200005363 A1 IT202200005363 A1 IT 202200005363A1 IT 102022000005363 A IT102022000005363 A IT 102022000005363A IT 202200005363 A IT202200005363 A IT 202200005363A IT 202200005363 A1 IT202200005363 A1 IT 202200005363A1
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IT
Italy
Prior art keywords
sic
electronic device
jbs
formation
mps diode
Prior art date
Application number
IT102022000005363A
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English (en)
Inventor
Simone Rascuna'
Fabrizio Roccaforte
Gabriele Bellocchi
Marilena Vivona
Original Assignee
St Microelectronics Srl
Consiglio Nazionale Ricerche
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Publication date
Application filed by St Microelectronics Srl, Consiglio Nazionale Ricerche filed Critical St Microelectronics Srl
Priority to IT102022000005363A priority Critical patent/IT202200005363A1/it
Priority to US18/180,680 priority patent/US20230299173A1/en
Priority to EP23161718.4A priority patent/EP4246554A1/en
Priority to US18/183,866 priority patent/US20230299148A1/en
Priority to JP2023042935A priority patent/JP2023138485A/ja
Publication of IT202200005363A1 publication Critical patent/IT202200005363A1/it

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    • H—ELECTRICITY
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
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    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
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    • H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
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    • H01L21/048—Making electrodes
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
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  • Electrodes Of Semiconductors (AREA)
IT102022000005363A 2022-03-18 2022-03-18 Formazione di un dispositivo elettronico, quale un diodo jbs o mps, basato su 3c-sic, e dispositivo elettronico in 3c-sic IT202200005363A1 (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT102022000005363A IT202200005363A1 (it) 2022-03-18 2022-03-18 Formazione di un dispositivo elettronico, quale un diodo jbs o mps, basato su 3c-sic, e dispositivo elettronico in 3c-sic
US18/180,680 US20230299173A1 (en) 2022-03-18 2023-03-08 Forming an electronic device, such as a jbs or mps diode, based on 3c-sic, and 3c-sic electronic device
EP23161718.4A EP4246554A1 (en) 2022-03-18 2023-03-14 Forming an electronic device, such as a jbs or mps diode, based on 3c-sic, and 3c-sic electronic device
US18/183,866 US20230299148A1 (en) 2022-03-18 2023-03-14 Forming an electronic device, such as a jbs or mps diode, based on 3c-sic, and 3c-sic electronic device
JP2023042935A JP2023138485A (ja) 2022-03-18 2023-03-17 ３ｃ－ｓｉｃに基づいてｊｂｓ又はｍｐｓ等の電子装置を製造する方法及び３ｃ－ｓｉｃ電子装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT102022000005363A IT202200005363A1 (it) 2022-03-18 2022-03-18 Formazione di un dispositivo elettronico, quale un diodo jbs o mps, basato su 3c-sic, e dispositivo elettronico in 3c-sic

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IT202200005363A1 true IT202200005363A1 (it) 2023-09-18

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IT102022000005363A IT202200005363A1 (it) 2022-03-18 2022-03-18 Formazione di un dispositivo elettronico, quale un diodo jbs o mps, basato su 3c-sic, e dispositivo elettronico in 3c-sic

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US (1) US20230299173A1 (it)
EP (1) EP4246554A1 (it)
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IT (1) IT202200005363A1 (it)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130240906A1 (en) * 2012-03-16 2013-09-19 Natl. Inst. of Advanced Indust. Science and Tech. Sic semiconductor device and manufacturing method thereof
US20210328023A1 (en) * 2020-04-17 2021-10-21 Stmicroelectronics S.R.L. Doping activation and ohmic contact formation in a sic electronic device, and sic electronic device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130240906A1 (en) * 2012-03-16 2013-09-19 Natl. Inst. of Advanced Indust. Science and Tech. Sic semiconductor device and manufacturing method thereof
US20210328023A1 (en) * 2020-04-17 2021-10-21 Stmicroelectronics S.R.L. Doping activation and ohmic contact formation in a sic electronic device, and sic electronic device

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
CHOI, I.JEONG, H.SHIN, H. ET AL.: "Laser-induced phase separation of silicon carbide", NATURE COMMUNICATIONS, vol. 7, 2016, pages 13562
INSUNG CHOI ET AL: "Laser-induced phase separation of silicon carbide", NATURE COMMUNICATIONS, NATURE PUBLISHING GROUP, UK, vol. 7, no. 1, 4 January 2016 (2016-01-04), pages 13562 - 1, XP009540307, ISSN: 2041-1723, Retrieved from the Internet <URL:http://www.nature.com/articles/ncomms13562> [retrieved on 20161130], DOI: 10.1038/NCOMMS13562 *
ROSITSA YAKIMOVA ET AL.: "Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes", ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 6, no. 10, November 2017 (2017-11-01), pages 741
SOUEIDAN M ET AL.: "A Vapor-Liquid-Solid Mechanism for Growing 3C-SiC Single-Domain Layers on 6H-SiC (0001", ADVANCED FUNCTIONAL MATERIALS, vol. 16, 2 May 2006 (2006-05-02), pages 975 - 979
VALDAS JOKUBAVICIUS ET AL.: "Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates", CRYSTAL GROWTH & DESIGN, vol. 14, no. 12, 2014, pages 6514 - 6520

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US20230299173A1 (en) 2023-09-21
JP2023138485A (ja) 2023-10-02

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