IT201900024436A1 - PROCEDURE FOR CUTTING SEMICONDUCTOR SUBSTRATES AND CORRESPONDING SEMICONDUCTOR PRODUCT - Google Patents
PROCEDURE FOR CUTTING SEMICONDUCTOR SUBSTRATES AND CORRESPONDING SEMICONDUCTOR PRODUCTInfo
- Publication number
- IT201900024436A1 IT201900024436A1 IT102019000024436A IT201900024436A IT201900024436A1 IT 201900024436 A1 IT201900024436 A1 IT 201900024436A1 IT 102019000024436 A IT102019000024436 A IT 102019000024436A IT 201900024436 A IT201900024436 A IT 201900024436A IT 201900024436 A1 IT201900024436 A1 IT 201900024436A1
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- cutting
- semiconductor
- product
- substrates
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102019000024436A IT201900024436A1 (en) | 2019-12-18 | 2019-12-18 | PROCEDURE FOR CUTTING SEMICONDUCTOR SUBSTRATES AND CORRESPONDING SEMICONDUCTOR PRODUCT |
US17/121,184 US20210187663A1 (en) | 2019-12-18 | 2020-12-14 | Method of cutting semiconductor substrates and corresponding semiconductor product |
CN202011503403.XA CN113013097A (en) | 2019-12-18 | 2020-12-17 | Method for cutting semiconductor substrate and corresponding semiconductor product |
CN202023052410.0U CN215266256U (en) | 2019-12-18 | 2020-12-17 | Semiconductor product |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102019000024436A IT201900024436A1 (en) | 2019-12-18 | 2019-12-18 | PROCEDURE FOR CUTTING SEMICONDUCTOR SUBSTRATES AND CORRESPONDING SEMICONDUCTOR PRODUCT |
Publications (1)
Publication Number | Publication Date |
---|---|
IT201900024436A1 true IT201900024436A1 (en) | 2021-06-18 |
Family
ID=70009310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT102019000024436A IT201900024436A1 (en) | 2019-12-18 | 2019-12-18 | PROCEDURE FOR CUTTING SEMICONDUCTOR SUBSTRATES AND CORRESPONDING SEMICONDUCTOR PRODUCT |
Country Status (3)
Country | Link |
---|---|
US (1) | US20210187663A1 (en) |
CN (2) | CN113013097A (en) |
IT (1) | IT201900024436A1 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050282360A1 (en) * | 2004-06-22 | 2005-12-22 | Nec Electronics Corporation | Semiconductor wafer and manufacturing process for semiconductor device |
US20080277806A1 (en) * | 2007-05-08 | 2008-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor wafer with assisting dicing structure and dicing method thereof |
US20100081255A1 (en) * | 2008-09-29 | 2010-04-01 | Erasenthiran Poonjolai | Methods for reducing defects through selective laser scribing |
-
2019
- 2019-12-18 IT IT102019000024436A patent/IT201900024436A1/en unknown
-
2020
- 2020-12-14 US US17/121,184 patent/US20210187663A1/en not_active Abandoned
- 2020-12-17 CN CN202011503403.XA patent/CN113013097A/en active Pending
- 2020-12-17 CN CN202023052410.0U patent/CN215266256U/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050282360A1 (en) * | 2004-06-22 | 2005-12-22 | Nec Electronics Corporation | Semiconductor wafer and manufacturing process for semiconductor device |
US20080277806A1 (en) * | 2007-05-08 | 2008-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor wafer with assisting dicing structure and dicing method thereof |
US20100081255A1 (en) * | 2008-09-29 | 2010-04-01 | Erasenthiran Poonjolai | Methods for reducing defects through selective laser scribing |
Also Published As
Publication number | Publication date |
---|---|
US20210187663A1 (en) | 2021-06-24 |
CN113013097A (en) | 2021-06-22 |
CN215266256U (en) | 2021-12-21 |
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