IT201900024436A1 - PROCEDURE FOR CUTTING SEMICONDUCTOR SUBSTRATES AND CORRESPONDING SEMICONDUCTOR PRODUCT - Google Patents

PROCEDURE FOR CUTTING SEMICONDUCTOR SUBSTRATES AND CORRESPONDING SEMICONDUCTOR PRODUCT

Info

Publication number
IT201900024436A1
IT201900024436A1 IT102019000024436A IT201900024436A IT201900024436A1 IT 201900024436 A1 IT201900024436 A1 IT 201900024436A1 IT 102019000024436 A IT102019000024436 A IT 102019000024436A IT 201900024436 A IT201900024436 A IT 201900024436A IT 201900024436 A1 IT201900024436 A1 IT 201900024436A1
Authority
IT
Italy
Prior art keywords
procedure
cutting
semiconductor
product
substrates
Prior art date
Application number
IT102019000024436A
Other languages
Italian (it)
Inventor
Antonio Bellizzi
Michele Derai
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT102019000024436A priority Critical patent/IT201900024436A1/en
Priority to US17/121,184 priority patent/US20210187663A1/en
Priority to CN202011503403.XA priority patent/CN113013097A/en
Priority to CN202023052410.0U priority patent/CN215266256U/en
Publication of IT201900024436A1 publication Critical patent/IT201900024436A1/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • B23K26/402Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
IT102019000024436A 2019-12-18 2019-12-18 PROCEDURE FOR CUTTING SEMICONDUCTOR SUBSTRATES AND CORRESPONDING SEMICONDUCTOR PRODUCT IT201900024436A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT102019000024436A IT201900024436A1 (en) 2019-12-18 2019-12-18 PROCEDURE FOR CUTTING SEMICONDUCTOR SUBSTRATES AND CORRESPONDING SEMICONDUCTOR PRODUCT
US17/121,184 US20210187663A1 (en) 2019-12-18 2020-12-14 Method of cutting semiconductor substrates and corresponding semiconductor product
CN202011503403.XA CN113013097A (en) 2019-12-18 2020-12-17 Method for cutting semiconductor substrate and corresponding semiconductor product
CN202023052410.0U CN215266256U (en) 2019-12-18 2020-12-17 Semiconductor product

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT102019000024436A IT201900024436A1 (en) 2019-12-18 2019-12-18 PROCEDURE FOR CUTTING SEMICONDUCTOR SUBSTRATES AND CORRESPONDING SEMICONDUCTOR PRODUCT

Publications (1)

Publication Number Publication Date
IT201900024436A1 true IT201900024436A1 (en) 2021-06-18

Family

ID=70009310

Family Applications (1)

Application Number Title Priority Date Filing Date
IT102019000024436A IT201900024436A1 (en) 2019-12-18 2019-12-18 PROCEDURE FOR CUTTING SEMICONDUCTOR SUBSTRATES AND CORRESPONDING SEMICONDUCTOR PRODUCT

Country Status (3)

Country Link
US (1) US20210187663A1 (en)
CN (2) CN113013097A (en)
IT (1) IT201900024436A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050282360A1 (en) * 2004-06-22 2005-12-22 Nec Electronics Corporation Semiconductor wafer and manufacturing process for semiconductor device
US20080277806A1 (en) * 2007-05-08 2008-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with assisting dicing structure and dicing method thereof
US20100081255A1 (en) * 2008-09-29 2010-04-01 Erasenthiran Poonjolai Methods for reducing defects through selective laser scribing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050282360A1 (en) * 2004-06-22 2005-12-22 Nec Electronics Corporation Semiconductor wafer and manufacturing process for semiconductor device
US20080277806A1 (en) * 2007-05-08 2008-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with assisting dicing structure and dicing method thereof
US20100081255A1 (en) * 2008-09-29 2010-04-01 Erasenthiran Poonjolai Methods for reducing defects through selective laser scribing

Also Published As

Publication number Publication date
US20210187663A1 (en) 2021-06-24
CN113013097A (en) 2021-06-22
CN215266256U (en) 2021-12-21

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