IT201700096658A1 - Trasduttore microelettromeccanico con membrana sottile per pressioni elevate, metodo di fabbricazione dello stesso e sistema includente il trasduttore microelettromeccanico - Google Patents

Trasduttore microelettromeccanico con membrana sottile per pressioni elevate, metodo di fabbricazione dello stesso e sistema includente il trasduttore microelettromeccanico

Info

Publication number
IT201700096658A1
IT201700096658A1 IT102017000096658A IT201700096658A IT201700096658A1 IT 201700096658 A1 IT201700096658 A1 IT 201700096658A1 IT 102017000096658 A IT102017000096658 A IT 102017000096658A IT 201700096658 A IT201700096658 A IT 201700096658A IT 201700096658 A1 IT201700096658 A1 IT 201700096658A1
Authority
IT
Italy
Prior art keywords
transducer
microelettromechanical
microelectrcanical
manufacture
high pressure
Prior art date
Application number
IT102017000096658A
Other languages
English (en)
Inventor
Enri Duqi
Lorenzo Baldo
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT102017000096658A priority Critical patent/IT201700096658A1/it
Priority to EP18188756.3A priority patent/EP3450949B1/en
Priority to US16/101,987 priority patent/US10527511B2/en
Priority to CN201821387111.2U priority patent/CN208736597U/zh
Priority to CN201810983712.8A priority patent/CN109425460B/zh
Publication of IT201700096658A1 publication Critical patent/IT201700096658A1/it

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0045—Diaphragm associated with a buried cavity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
    • G01L13/02—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
    • G01L13/025—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements using diaphragms

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
IT102017000096658A 2017-08-28 2017-08-28 Trasduttore microelettromeccanico con membrana sottile per pressioni elevate, metodo di fabbricazione dello stesso e sistema includente il trasduttore microelettromeccanico IT201700096658A1 (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT102017000096658A IT201700096658A1 (it) 2017-08-28 2017-08-28 Trasduttore microelettromeccanico con membrana sottile per pressioni elevate, metodo di fabbricazione dello stesso e sistema includente il trasduttore microelettromeccanico
EP18188756.3A EP3450949B1 (en) 2017-08-28 2018-08-13 Microelectromechanical transducer with thin-membrane for high pressures, method of manufacturing the same and system including the microelectromechanical transducer
US16/101,987 US10527511B2 (en) 2017-08-28 2018-08-13 Microelectromechanical transducer with thin-membrane for high pressures, method of manufacturing the same and system including the microelectromechanical transducer
CN201821387111.2U CN208736597U (zh) 2017-08-28 2018-08-27 微机电换能器和包括微机电换能器的系统
CN201810983712.8A CN109425460B (zh) 2017-08-28 2018-08-27 用于高压的具有薄膜的微机电换能器、其制造方法和包括微机电换能器的系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT102017000096658A IT201700096658A1 (it) 2017-08-28 2017-08-28 Trasduttore microelettromeccanico con membrana sottile per pressioni elevate, metodo di fabbricazione dello stesso e sistema includente il trasduttore microelettromeccanico

Publications (1)

Publication Number Publication Date
IT201700096658A1 true IT201700096658A1 (it) 2019-02-28

Family

ID=60628111

Family Applications (1)

Application Number Title Priority Date Filing Date
IT102017000096658A IT201700096658A1 (it) 2017-08-28 2017-08-28 Trasduttore microelettromeccanico con membrana sottile per pressioni elevate, metodo di fabbricazione dello stesso e sistema includente il trasduttore microelettromeccanico

Country Status (4)

Country Link
US (1) US10527511B2 (it)
EP (1) EP3450949B1 (it)
CN (2) CN109425460B (it)
IT (1) IT201700096658A1 (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110926684A (zh) * 2019-12-17 2020-03-27 中国电子科技集团公司第四十九研究所 一种耐350℃高温压力传感器的转接环结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993012410A1 (en) * 1991-12-13 1993-06-24 Honeywell Inc. Piezoresistive silicon pressure sensor design
US20100083766A1 (en) * 2008-10-07 2010-04-08 Yamatake Corporation Pressure sensor
US20100083765A1 (en) * 2008-10-07 2010-04-08 Yamatake Corporation Pressure sensor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101228383B1 (ko) * 2005-07-22 2013-02-07 에스티마이크로일렉트로닉스 에스.알.엘. 두 배의 측정 스케일 및 높은 정밀도의 풀 스케일의 통합된압력 센서
TWI265555B (en) * 2005-08-23 2006-11-01 Touch Micro System Tech Method of forming a piezoresistive device capable of selecting standards and method of forming a circuit layout capable of selecting sub circuit layouts
JP5248317B2 (ja) * 2006-11-29 2013-07-31 株式会社フジクラ 圧力センサモジュール
ITTO20120145A1 (it) * 2012-02-17 2013-08-18 St Microelectronics Srl Trasduttore integrato provvisto di un sensore di temperatura, e metodo per rilevare una temperatura di tale trasduttore
US20150122039A1 (en) * 2013-11-06 2015-05-07 Honeywell International Inc. Silicon on nothing pressure sensor
US10023461B2 (en) * 2014-10-31 2018-07-17 Stmicroelectronics S.R.L. Microintegrated encapsulated MEMS sensor with mechanical decoupling and manufacturing process thereof
CN106197776B (zh) * 2015-05-27 2019-11-05 意法半导体股份有限公司 压力传感器、压力测量设备、制动系统和测量压力的方法
CN205262665U (zh) * 2015-06-22 2016-05-25 意法半导体股份有限公司 压力传感器
GB201512288D0 (en) * 2015-07-14 2015-08-19 Melexis Technologies Nv Pressure sensor with built in stress buffer
EP3147258A1 (en) * 2015-09-22 2017-03-29 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Connection panel for electronic components

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993012410A1 (en) * 1991-12-13 1993-06-24 Honeywell Inc. Piezoresistive silicon pressure sensor design
US20100083766A1 (en) * 2008-10-07 2010-04-08 Yamatake Corporation Pressure sensor
US20100083765A1 (en) * 2008-10-07 2010-04-08 Yamatake Corporation Pressure sensor

Also Published As

Publication number Publication date
US10527511B2 (en) 2020-01-07
CN109425460B (zh) 2021-05-18
CN109425460A (zh) 2019-03-05
CN208736597U (zh) 2019-04-12
EP3450949B1 (en) 2020-10-14
US20190064020A1 (en) 2019-02-28
EP3450949A1 (en) 2019-03-06

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