IT1394906B1 - Dispositivo integrato incorporante componenti di bassa tensione e componenti di potenza e procedimento di fabbricazione di tale dispositivo - Google Patents
Dispositivo integrato incorporante componenti di bassa tensione e componenti di potenza e procedimento di fabbricazione di tale dispositivoInfo
- Publication number
- IT1394906B1 IT1394906B1 ITTO2009A000550A ITTO20090550A IT1394906B1 IT 1394906 B1 IT1394906 B1 IT 1394906B1 IT TO2009A000550 A ITTO2009A000550 A IT TO2009A000550A IT TO20090550 A ITTO20090550 A IT TO20090550A IT 1394906 B1 IT1394906 B1 IT 1394906B1
- Authority
- IT
- Italy
- Prior art keywords
- components
- manufacture
- low voltage
- incorporating low
- integrated device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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- H01L29/0642—Isolation within the component, i.e. internal isolation
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- H01L29/0843—Source or drain regions of field-effect devices
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- H01L29/66409—Unipolar field-effect transistors
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- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/66409—Unipolar field-effect transistors
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- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Emergency Protection Circuit Devices (AREA)
- Element Separation (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO2009A000550A IT1394906B1 (it) | 2009-07-21 | 2009-07-21 | Dispositivo integrato incorporante componenti di bassa tensione e componenti di potenza e procedimento di fabbricazione di tale dispositivo |
US12/839,989 US8975723B2 (en) | 2009-07-21 | 2010-07-20 | Integrated device incorporating low-voltage components and power components, and process for manufacturing such device |
US14/607,438 US9385049B2 (en) | 2009-07-21 | 2015-01-28 | Process for manufacturing integrated device incorporating low-voltage components and power components |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO2009A000550A IT1394906B1 (it) | 2009-07-21 | 2009-07-21 | Dispositivo integrato incorporante componenti di bassa tensione e componenti di potenza e procedimento di fabbricazione di tale dispositivo |
Publications (2)
Publication Number | Publication Date |
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ITTO20090550A1 ITTO20090550A1 (it) | 2011-01-22 |
IT1394906B1 true IT1394906B1 (it) | 2012-07-20 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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ITTO2009A000550A IT1394906B1 (it) | 2009-07-21 | 2009-07-21 | Dispositivo integrato incorporante componenti di bassa tensione e componenti di potenza e procedimento di fabbricazione di tale dispositivo |
Country Status (2)
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US (2) | US8975723B2 (it) |
IT (1) | IT1394906B1 (it) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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ITMI20121244A1 (it) | 2012-07-17 | 2014-01-18 | St Microelectronics Srl | Transistore con contatti di terminale auto-allineati |
CN105261644A (zh) * | 2014-07-16 | 2016-01-20 | 世界先进积体电路股份有限公司 | 半导体装置及其制造方法 |
IT201700099412A1 (it) * | 2017-09-05 | 2019-03-05 | St Microelectronics Srl | Giroscopio mems con regolazione del mismatch fra la frequenza di pilotaggio e la frequenza di rilevamento |
CN112309865B (zh) * | 2019-08-01 | 2022-10-18 | 无锡华润上华科技有限公司 | 横向扩散金属氧化物半导体器件及其制造方法 |
CN110473908B (zh) * | 2019-08-29 | 2023-01-17 | 杭州电子科技大学温州研究院有限公司 | 一种具有梯形氧化槽的绝缘层上硅ldmos晶体管 |
IT201900024532A1 (it) * | 2019-12-18 | 2021-06-18 | St Microelectronics Srl | Dispositivo integrato con presa profonda sotto trincea superficiale |
US11417739B2 (en) | 2020-10-13 | 2022-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Contacts for semiconductor devices and methods of forming the same |
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KR100253075B1 (ko) * | 1997-05-15 | 2000-04-15 | 윤종용 | 고내압 반도체 장치 및 그의 제조 방법 |
US6444528B1 (en) * | 2000-08-16 | 2002-09-03 | Fairchild Semiconductor Corporation | Selective oxide deposition in the bottom of a trench |
US6504226B1 (en) * | 2001-12-20 | 2003-01-07 | Stmicroelectronics, Inc. | Thin-film transistor used as heating element for microreaction chamber |
US6858500B2 (en) * | 2002-01-16 | 2005-02-22 | Fuji Electric Co., Ltd. | Semiconductor device and its manufacturing method |
JP4265234B2 (ja) * | 2003-02-13 | 2009-05-20 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
US6965253B1 (en) * | 2004-06-30 | 2005-11-15 | Pericom Semiconductor Corp. | Reduced-capacitance bus switch in isolated P-well shorted to source and drain during switching |
KR100684428B1 (ko) * | 2004-12-29 | 2007-02-16 | 동부일렉트로닉스 주식회사 | 낮은 온저항을 갖는 고전압 트랜지스터 및 이의 제조 방법 |
EP1895578A1 (en) * | 2006-09-01 | 2008-03-05 | STMicroelectronics S.r.l. | Manufacturing method of an integrated circuit formed on a semiconductor substrate |
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2009
- 2009-07-21 IT ITTO2009A000550A patent/IT1394906B1/it active
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2010
- 2010-07-20 US US12/839,989 patent/US8975723B2/en active Active
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2015
- 2015-01-28 US US14/607,438 patent/US9385049B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8975723B2 (en) | 2015-03-10 |
US20150140750A1 (en) | 2015-05-21 |
US20110018068A1 (en) | 2011-01-27 |
US9385049B2 (en) | 2016-07-05 |
ITTO20090550A1 (it) | 2011-01-22 |
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