IT1394053B1 - REACTOR FOR DEPOSITION OF LAYERS ON SUBSTRATES - Google Patents

REACTOR FOR DEPOSITION OF LAYERS ON SUBSTRATES

Info

Publication number
IT1394053B1
IT1394053B1 ITMI2009A000753A ITMI20090753A IT1394053B1 IT 1394053 B1 IT1394053 B1 IT 1394053B1 IT MI2009A000753 A ITMI2009A000753 A IT MI2009A000753A IT MI20090753 A ITMI20090753 A IT MI20090753A IT 1394053 B1 IT1394053 B1 IT 1394053B1
Authority
IT
Italy
Prior art keywords
reactor
substrates
deposition
layers
Prior art date
Application number
ITMI2009A000753A
Other languages
Italian (it)
Inventor
Mario Preti
Franco Preti
Original Assignee
Lpe Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lpe Spa filed Critical Lpe Spa
Priority to ITMI2009A000753A priority Critical patent/IT1394053B1/en
Publication of ITMI20090753A1 publication Critical patent/ITMI20090753A1/en
Application granted granted Critical
Publication of IT1394053B1 publication Critical patent/IT1394053B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Saccharide Compounds (AREA)
ITMI2009A000753A 2009-05-04 2009-05-04 REACTOR FOR DEPOSITION OF LAYERS ON SUBSTRATES IT1394053B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ITMI2009A000753A IT1394053B1 (en) 2009-05-04 2009-05-04 REACTOR FOR DEPOSITION OF LAYERS ON SUBSTRATES

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI2009A000753A IT1394053B1 (en) 2009-05-04 2009-05-04 REACTOR FOR DEPOSITION OF LAYERS ON SUBSTRATES

Publications (2)

Publication Number Publication Date
ITMI20090753A1 ITMI20090753A1 (en) 2010-11-05
IT1394053B1 true IT1394053B1 (en) 2012-05-25

Family

ID=41716471

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI2009A000753A IT1394053B1 (en) 2009-05-04 2009-05-04 REACTOR FOR DEPOSITION OF LAYERS ON SUBSTRATES

Country Status (1)

Country Link
IT (1) IT1394053B1 (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58185499A (en) * 1982-04-21 1983-10-29 Clarion Co Ltd Device for growing thin film in vapor phase
US5493987A (en) * 1994-05-16 1996-02-27 Ag Associates, Inc. Chemical vapor deposition reactor and method
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
JP3702068B2 (en) * 1997-04-09 2005-10-05 東京エレクトロン株式会社 Substrate processing equipment
US20040020599A1 (en) * 2000-12-27 2004-02-05 Sumi Tanaka Treating device
DE10301949A1 (en) * 2003-01-20 2004-07-29 Siced Electronics Development Gmbh & Co. Kg CVD reactor for producing a silicon carbide single crystalline layer comprises a reaction chamber, a susceptor arranged in the reaction chamber, and a gas inlet with a diffuser and a homogenizing unit
KR100558922B1 (en) * 2004-12-16 2006-03-10 (주)퓨전에이드 Apparatus and method for thin film deposition

Also Published As

Publication number Publication date
ITMI20090753A1 (en) 2010-11-05

Similar Documents

Publication Publication Date Title
DK2371923T3 (en) deposition inhibitor
GB0805328D0 (en) Deposition of an amorphous layer
BR112012006813A2 (en) coated substrate
EP2507826A4 (en) Method for improving performance of a substrate carrier
EP2449579A4 (en) Methods of forming oxide layers on substrates
EP2617807A4 (en) Culture substrate
GB201208994D0 (en) Spalling for a semiconductor substrate
PL2714608T3 (en) Transparent glass substrate having a coating of consecutive layers
EP2643099A4 (en) Deposition of a silver layer on a nonconducting substrate
EP2681045A4 (en) Protective internal coatings for porous substrates
FR2972446B1 (en) SUBSTRATE FOR PHOTOVOLTAIC CELL
GB0904803D0 (en) Coated substrate
SMT201500156B (en) Compounds of dihydropyrolonaphtoneone as jak inhibitors
HK1168392A1 (en) Process for production of semiconductor light-emitting element substrate
EP2794280A4 (en) Coated media substrate
DK2516435T3 (en) Inhibitors of AKT activity
EP2245216A4 (en) Indium electroplating baths for thin layer deposition
EP2704856A4 (en) Methods and systems for nanoparticle-only layer by layer surface modification of substrate membrane
BRPI1006546A2 (en) method of coating a metallic substrate
IT1402060B1 (en) MANUFACTURED FOR SURFACE COATING
GB0916510D0 (en) Deposition of materials
EP2426238A4 (en) METHOD FOR FABRICATING SiC SUBSTRATE
FI20115966A (en) A method for improving the life of a silicon substrate
IT1403828B1 (en) PROCEDURE FOR THE PRINTING OF A SUBSTRATE
FR2972724B1 (en) SUBSTRATE FOR PHOTOVOLTAIC CELL