IT1392270B1 - Metodo di fabbricazione di dispositivi a nanostrutture filamentose di carbonio sopra una superficie relativamente ampia - Google Patents

Metodo di fabbricazione di dispositivi a nanostrutture filamentose di carbonio sopra una superficie relativamente ampia

Info

Publication number
IT1392270B1
IT1392270B1 ITVA2008A000061A ITVA20080061A IT1392270B1 IT 1392270 B1 IT1392270 B1 IT 1392270B1 IT VA2008A000061 A ITVA2008A000061 A IT VA2008A000061A IT VA20080061 A ITVA20080061 A IT VA20080061A IT 1392270 B1 IT1392270 B1 IT 1392270B1
Authority
IT
Italy
Prior art keywords
filamentose
manufacture
carbon
devices
relatively wide
Prior art date
Application number
ITVA2008A000061A
Other languages
English (en)
Inventor
Maria Fortuna Bevilacqua
Danilo Mascolo
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITVA2008A000061A priority Critical patent/IT1392270B1/it
Priority to US12/627,426 priority patent/US8048785B2/en
Publication of ITVA20080061A1 publication Critical patent/ITVA20080061A1/it
Priority to US13/269,923 priority patent/US8212234B2/en
Application granted granted Critical
Publication of IT1392270B1 publication Critical patent/IT1392270B1/it

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/901—Manufacture, treatment, or detection of nanostructure having step or means utilizing electromagnetic property, e.g. optical, x-ray, electron beamm

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Inorganic Fibers (AREA)
ITVA2008A000061A 2008-12-12 2008-12-12 Metodo di fabbricazione di dispositivi a nanostrutture filamentose di carbonio sopra una superficie relativamente ampia IT1392270B1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
ITVA2008A000061A IT1392270B1 (it) 2008-12-12 2008-12-12 Metodo di fabbricazione di dispositivi a nanostrutture filamentose di carbonio sopra una superficie relativamente ampia
US12/627,426 US8048785B2 (en) 2008-12-12 2009-11-30 Method of fabricating nanosized filamentary carbon devices over a relatively large-area
US13/269,923 US8212234B2 (en) 2008-12-12 2011-10-10 Method of fabricating nanosized filamentary carbon devices over a relatively large-area

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITVA2008A000061A IT1392270B1 (it) 2008-12-12 2008-12-12 Metodo di fabbricazione di dispositivi a nanostrutture filamentose di carbonio sopra una superficie relativamente ampia

Publications (2)

Publication Number Publication Date
ITVA20080061A1 ITVA20080061A1 (it) 2010-06-13
IT1392270B1 true IT1392270B1 (it) 2012-02-22

Family

ID=40933826

Family Applications (1)

Application Number Title Priority Date Filing Date
ITVA2008A000061A IT1392270B1 (it) 2008-12-12 2008-12-12 Metodo di fabbricazione di dispositivi a nanostrutture filamentose di carbonio sopra una superficie relativamente ampia

Country Status (2)

Country Link
US (2) US8048785B2 (it)
IT (1) IT1392270B1 (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106989828A (zh) * 2016-01-20 2017-07-28 优利斯公司 制造具有微囊的电磁辐射探测器的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7385262B2 (en) * 2001-11-27 2008-06-10 The Board Of Trustees Of The Leland Stanford Junior University Band-structure modulation of nano-structures in an electric field
JP4627188B2 (ja) * 2003-05-22 2011-02-09 富士通株式会社 電界効果トランジスタ及びその製造方法
US7345296B2 (en) * 2004-09-16 2008-03-18 Atomate Corporation Nanotube transistor and rectifying devices
US7279433B2 (en) * 2004-09-20 2007-10-09 Freescale Semiconductor, Inc. Deposition and patterning of boron nitride nanotube ILD
KR100749751B1 (ko) * 2006-08-02 2007-08-17 삼성전자주식회사 트랜지스터 및 그 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106989828A (zh) * 2016-01-20 2017-07-28 优利斯公司 制造具有微囊的电磁辐射探测器的方法

Also Published As

Publication number Publication date
US8212234B2 (en) 2012-07-03
US8048785B2 (en) 2011-11-01
US20100264399A1 (en) 2010-10-21
US20120025166A1 (en) 2012-02-02
ITVA20080061A1 (it) 2010-06-13

Similar Documents

Publication Publication Date Title
EP2245655A4 (en) METHOD FOR STRUCTURED HEATING OF CHOSEN MATERIAL
EP2325882A4 (en) Method for manufacturing semiconductor device
EP2353174A4 (en) METHOD FOR PRODUCING SUBSTRATES
EP2353173A4 (en) METHODS OF MANUFACTURING SUBSTRATES
EP2246880B8 (en) Semiconductor device fabrication method
EP2353175A4 (en) METHODS OF MANUFACTURING SUBSTRATES
PL2180938T3 (pl) Sposób oczyszczania gazu odlotowego
EP2264754B8 (en) Method for formation of siliceous film
EG26275A (en) Method to remove stains or dirt from the surface using citric acid
ZA201103640B (en) Method and composition for the treatment of a substrate
IT1397168B1 (it) Dispositivo e metodo per formare composti chimici insolubili
EP2312616A4 (en) METHOD FOR DEPOSITION OF FILM
FI20080128A (fi) Menetelmä lasin pinnan muokkaamiseksi
BRPI0914365A2 (pt) ''método de produção de fluoropropeno''
EP2291891A4 (en) Semiconductor laser
PL2271805T3 (pl) Sposób redukcji dźwięku
EP2050735A4 (en) METHOD FOR PRODUCING AN OPTICALLY ACTIVE 3-AMINO-NITROGENATED COMPOUND
TWI368978B (en) Method for fabricating ball-implantation side surface structure of package substrate
PL2276630T3 (pl) Sposób wytwarzania cienkiej folii polimerowej
IT1392270B1 (it) Metodo di fabbricazione di dispositivi a nanostrutture filamentose di carbonio sopra una superficie relativamente ampia
TWI373091B (en) Fabricating method of substrate
IT1392170B1 (it) Apparecchiatura per la produzione di una bevanda gassata
EP2302691A4 (en) METHOD FOR MANUFACTURING INTERMEDIATE BAND DEVICES USING A FINE SHEET
GB0803709D0 (en) Wide band-gap nanostructures
IL212476A0 (en) Appliction of a self-assembled monolayer as an oxide inhibitor