IT1314154B1 - Struttura a condensatore verticale ad alta densita' di integrazione erelativo processo di fabbricazione - Google Patents

Struttura a condensatore verticale ad alta densita' di integrazione erelativo processo di fabbricazione

Info

Publication number
IT1314154B1
IT1314154B1 IT1999MI002666A ITMI992666A IT1314154B1 IT 1314154 B1 IT1314154 B1 IT 1314154B1 IT 1999MI002666 A IT1999MI002666 A IT 1999MI002666A IT MI992666 A ITMI992666 A IT MI992666A IT 1314154 B1 IT1314154 B1 IT 1314154B1
Authority
IT
Italy
Prior art keywords
erelative
manufacturing process
high density
condenser structure
vertical condenser
Prior art date
Application number
IT1999MI002666A
Other languages
English (en)
Inventor
Salvatore Leonardi
Roberto Modica
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1999MI002666A priority Critical patent/IT1314154B1/it
Publication of ITMI992666A0 publication Critical patent/ITMI992666A0/it
Priority to US09/747,167 priority patent/US6614094B2/en
Publication of ITMI992666A1 publication Critical patent/ITMI992666A1/it
Application granted granted Critical
Publication of IT1314154B1 publication Critical patent/IT1314154B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Treating Waste Gases (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Memories (AREA)
IT1999MI002666A 1999-12-21 1999-12-21 Struttura a condensatore verticale ad alta densita' di integrazione erelativo processo di fabbricazione IT1314154B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1999MI002666A IT1314154B1 (it) 1999-12-21 1999-12-21 Struttura a condensatore verticale ad alta densita' di integrazione erelativo processo di fabbricazione
US09/747,167 US6614094B2 (en) 1999-12-21 2000-12-21 High integration density vertical capacitor structure and fabrication process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999MI002666A IT1314154B1 (it) 1999-12-21 1999-12-21 Struttura a condensatore verticale ad alta densita' di integrazione erelativo processo di fabbricazione

Publications (3)

Publication Number Publication Date
ITMI992666A0 ITMI992666A0 (it) 1999-12-21
ITMI992666A1 ITMI992666A1 (it) 2001-06-21
IT1314154B1 true IT1314154B1 (it) 2002-12-04

Family

ID=11384161

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999MI002666A IT1314154B1 (it) 1999-12-21 1999-12-21 Struttura a condensatore verticale ad alta densita' di integrazione erelativo processo di fabbricazione

Country Status (2)

Country Link
US (1) US6614094B2 (it)
IT (1) IT1314154B1 (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1302984A1 (en) 2001-10-09 2003-04-16 STMicroelectronics S.r.l. Protection structure against electrostatic discharges (ESD) for an electronic device integrated on a SOI substrate and corresponding integration process
US8222079B2 (en) * 2007-09-28 2012-07-17 International Business Machines Corporation Semiconductor device and method of making semiconductor device
US7999300B2 (en) * 2009-01-28 2011-08-16 Globalfoundries Singapore Pte. Ltd. Memory cell structure and method for fabrication thereof
TWI566390B (zh) * 2014-10-31 2017-01-11 力晶科技股份有限公司 能改善像素動態範圍的ｃｍｏｓ影像感應器
CN106571362B (zh) * 2015-10-13 2019-07-26 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
EP3627558B1 (en) * 2018-08-08 2021-06-23 Shenzhen Weitongbo Technology Co., Ltd. Double-sided capacitor and manufacturing method therefor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376686A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device
US5665622A (en) * 1995-03-15 1997-09-09 International Business Machines Corporation Folded trench and rie/deposition process for high-value capacitors
US5920108A (en) * 1995-06-05 1999-07-06 Harris Corporation Late process method and apparatus for trench isolation
US6255675B1 (en) * 1998-07-10 2001-07-03 Xilinx, Inc. Programmable capacitor for an integrated circuit

Also Published As

Publication number Publication date
US20010015429A1 (en) 2001-08-23
ITMI992666A1 (it) 2001-06-21
US6614094B2 (en) 2003-09-02
ITMI992666A0 (it) 1999-12-21

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