IT1298560B1 - Generatore di corrente molto stabile in temperatura - Google Patents

Generatore di corrente molto stabile in temperatura

Info

Publication number
IT1298560B1
IT1298560B1 IT98MI000219A ITMI980219A IT1298560B1 IT 1298560 B1 IT1298560 B1 IT 1298560B1 IT 98MI000219 A IT98MI000219 A IT 98MI000219A IT MI980219 A ITMI980219 A IT MI980219A IT 1298560 B1 IT1298560 B1 IT 1298560B1
Authority
IT
Italy
Prior art keywords
stable
temperature
current generator
generator
current
Prior art date
Application number
IT98MI000219A
Other languages
English (en)
Inventor
Carmela Calafato
Maurizio Gaibotti
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT98MI000219A priority Critical patent/IT1298560B1/it
Priority to US09/246,029 priority patent/US6133718A/en
Publication of ITMI980219A1 publication Critical patent/ITMI980219A1/it
Application granted granted Critical
Publication of IT1298560B1 publication Critical patent/IT1298560B1/it

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00Electricity: power supply or regulation systems
    • Y10S323/907Temperature compensation of semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
IT98MI000219A 1998-02-05 1998-02-05 Generatore di corrente molto stabile in temperatura IT1298560B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT98MI000219A IT1298560B1 (it) 1998-02-05 1998-02-05 Generatore di corrente molto stabile in temperatura
US09/246,029 US6133718A (en) 1998-02-05 1999-02-05 Temperature-stable current generation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT98MI000219A IT1298560B1 (it) 1998-02-05 1998-02-05 Generatore di corrente molto stabile in temperatura

Publications (2)

Publication Number Publication Date
ITMI980219A1 ITMI980219A1 (it) 1999-08-05
IT1298560B1 true IT1298560B1 (it) 2000-01-12

Family

ID=11378838

Family Applications (1)

Application Number Title Priority Date Filing Date
IT98MI000219A IT1298560B1 (it) 1998-02-05 1998-02-05 Generatore di corrente molto stabile in temperatura

Country Status (2)

Country Link
US (1) US6133718A (it)
IT (1) IT1298560B1 (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100278663B1 (ko) * 1998-12-18 2001-02-01 윤종용 반도체 집적회로의 바이어스 회로
US7026860B1 (en) 2003-05-08 2006-04-11 O2Micro International Limited Compensated self-biasing current generator
JP2005183660A (ja) * 2003-12-19 2005-07-07 Canon Inc 太陽電池モジュール
KR100517517B1 (ko) * 2004-02-20 2005-09-28 삼성전자주식회사 중간 시점 영상 합성 방법 및 그를 적용한 3d 디스플레이장치
US7122998B2 (en) * 2004-03-19 2006-10-17 Taiwan Semiconductor Manufacturing Company Current summing low-voltage band gap reference circuit
US7161340B2 (en) * 2004-07-12 2007-01-09 Realtek Semiconductor Corp. Method and apparatus for generating N-order compensated temperature independent reference voltage
US7821331B2 (en) * 2006-10-23 2010-10-26 Cypress Semiconductor Corporation Reduction of temperature dependence of a reference voltage
KR101483941B1 (ko) * 2008-12-24 2015-01-19 주식회사 동부하이텍 온도 독립형 기준 전류 발생 장치
US7944271B2 (en) * 2009-02-10 2011-05-17 Standard Microsystems Corporation Temperature and supply independent CMOS current source
US7999529B2 (en) * 2009-02-27 2011-08-16 Sandisk 3D Llc Methods and apparatus for generating voltage references using transistor threshold differences
JP5506594B2 (ja) * 2009-09-25 2014-05-28 セイコーインスツル株式会社 基準電圧回路
JP5967987B2 (ja) * 2012-03-13 2016-08-10 エスアイアイ・セミコンダクタ株式会社 基準電圧回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7403202A (nl) * 1974-03-11 1975-09-15 Philips Nv Stroomstabilisatieschakeling.

Also Published As

Publication number Publication date
ITMI980219A1 (it) 1999-08-05
US6133718A (en) 2000-10-17

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Legal Events

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0001 Granted