IT1263897B - Laser a semiconduttore a bassa corrente di soglia e relativo processo di costruzione - Google Patents

Laser a semiconduttore a bassa corrente di soglia e relativo processo di costruzione

Info

Publication number
IT1263897B
IT1263897B ITMI930253A ITMI930253A IT1263897B IT 1263897 B IT1263897 B IT 1263897B IT MI930253 A ITMI930253 A IT MI930253A IT MI930253 A ITMI930253 A IT MI930253A IT 1263897 B IT1263897 B IT 1263897B
Authority
IT
Italy
Prior art keywords
semiconductor laser
construction process
low threshold
layers
current
Prior art date
Application number
ITMI930253A
Other languages
English (en)
Inventor
Sergio Pellegrino
Giudice Massimo Del
Fabio Vidimari
Original Assignee
Alcatel Italia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Italia filed Critical Alcatel Italia
Priority to ITMI930253A priority Critical patent/IT1263897B/it
Publication of ITMI930253A0 publication Critical patent/ITMI930253A0/it
Priority to DE69401441T priority patent/DE69401441T2/de
Priority to EP94101449A priority patent/EP0610777B1/en
Priority to US08/196,289 priority patent/US5504769A/en
Publication of ITMI930253A1 publication Critical patent/ITMI930253A1/it
Application granted granted Critical
Publication of IT1263897B publication Critical patent/IT1263897B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Laser, a semiconduttore comprendente un substrato, mezzi atti a ridurre il flusso laterale di corrente e mezzi costituenti l'elemento attivo dove detti mezzi atti a ridurre il flusso laterale di corrente sono composti da almeno 3 strati di cui gli strati esterni sono interamente drogati e gli strati interni sono drogati solo nelle zone laterali rispetto all'elemento attivo, in modo che questi strati riducano il flusso laterale di corrente.
ITMI930253A 1993-02-12 1993-02-12 Laser a semiconduttore a bassa corrente di soglia e relativo processo di costruzione IT1263897B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
ITMI930253A IT1263897B (it) 1993-02-12 1993-02-12 Laser a semiconduttore a bassa corrente di soglia e relativo processo di costruzione
DE69401441T DE69401441T2 (de) 1993-02-12 1994-02-01 Halbleiterlaser mit niedrigem Schwellstrom und zugehöriges Herstellungsverfahren
EP94101449A EP0610777B1 (en) 1993-02-12 1994-02-01 Semiconductor laser with low threshold current and related manufacturing process
US08/196,289 US5504769A (en) 1993-02-12 1994-02-14 Semiconductor laser having low current threshold

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI930253A IT1263897B (it) 1993-02-12 1993-02-12 Laser a semiconduttore a bassa corrente di soglia e relativo processo di costruzione

Publications (3)

Publication Number Publication Date
ITMI930253A0 ITMI930253A0 (it) 1993-02-12
ITMI930253A1 ITMI930253A1 (it) 1994-08-12
IT1263897B true IT1263897B (it) 1996-09-05

Family

ID=11364979

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI930253A IT1263897B (it) 1993-02-12 1993-02-12 Laser a semiconduttore a bassa corrente di soglia e relativo processo di costruzione

Country Status (4)

Country Link
US (1) US5504769A (it)
EP (1) EP0610777B1 (it)
DE (1) DE69401441T2 (it)
IT (1) IT1263897B (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696784A (en) * 1996-04-19 1997-12-09 Opto Power Corporation Reduced mode laser and method of fabrication

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763882A (en) * 1980-10-06 1982-04-17 Nec Corp Manufacture of semiconductor laser
JPS5810884A (ja) * 1981-07-14 1983-01-21 Nec Corp 埋め込みヘテロ構造半導体レ−ザの製造方法
JPS59215785A (ja) * 1983-05-24 1984-12-05 Matsushita Electric Ind Co Ltd 半導体レ−ザ
DE3435148A1 (de) * 1984-09-25 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Laserdiode mit vergrabener aktiver schicht und mit seitlicher strombegrezung durch selbstjustierten pn-uebergang sowie verfahren zur herstellung einer solchen laserdiode
US5193098A (en) * 1989-01-27 1993-03-09 Spectra Diode Laboratories, Inc. Method of forming current barriers in semiconductor lasers
IT1236904B (it) * 1989-12-21 1993-04-26 Telettra Lab Telefon Processo di fabbricazione di strutture laser con confinamento laterale a bassissima corrente di soglia e relativi dispositivi laser cosi' ottenuti.
US5048038A (en) * 1990-01-25 1991-09-10 The United States Of America As Represented By The United States Department Of Energy Ion-implanted planar-buried-heterostructure diode laser

Also Published As

Publication number Publication date
ITMI930253A1 (it) 1994-08-12
ITMI930253A0 (it) 1993-02-12
EP0610777A1 (en) 1994-08-17
DE69401441T2 (de) 1997-06-12
EP0610777B1 (en) 1997-01-15
DE69401441D1 (de) 1997-02-27
US5504769A (en) 1996-04-02

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19990129