IT1252333B - Dispositivo circuitale per neutralizzare la deriva termica di uno stadio differenziale transconduttore - Google Patents

Dispositivo circuitale per neutralizzare la deriva termica di uno stadio differenziale transconduttore

Info

Publication number
IT1252333B
IT1252333B ITMI913144A ITMI913144A IT1252333B IT 1252333 B IT1252333 B IT 1252333B IT MI913144 A ITMI913144 A IT MI913144A IT MI913144 A ITMI913144 A IT MI913144A IT 1252333 B IT1252333 B IT 1252333B
Authority
IT
Italy
Prior art keywords
stage
circuit device
differential stage
transconductive
neutralize
Prior art date
Application number
ITMI913144A
Other languages
English (en)
Inventor
Maurizio Zuffada
Gianfranco Vai
Marco Gregori
David Moloney
Giorgio Betti
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to ITMI913144A priority Critical patent/IT1252333B/it
Publication of ITMI913144A0 publication Critical patent/ITMI913144A0/it
Priority to EP92830505A priority patent/EP0544627B1/en
Priority to DE69202751T priority patent/DE69202751T2/de
Priority to US07/982,376 priority patent/US5365193A/en
Priority to JP4316693A priority patent/JP2879874B2/ja
Publication of ITMI913144A1 publication Critical patent/ITMI913144A1/it
Application granted granted Critical
Publication of IT1252333B publication Critical patent/IT1252333B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45278—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using BiFET transistors as the active amplifying circuit
    • H03F3/45282—Long tailed pairs
    • H03F3/45286—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45304—Indexing scheme relating to differential amplifiers the common gate stage of a BIFET cascode dif amp being implemented fully by FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45674—Indexing scheme relating to differential amplifiers the LC comprising one current mirror
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45696—Indexing scheme relating to differential amplifiers the LC comprising more than two resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

Un dispositivo (1) circuitale per neutralizzare la deriva termica di uno stadio differenziale (4) transconduttore, comprende una prima porzione (2) circuitale strutturalmente corrispondente allo stadio differenziale transconduttore (4) e dotata di una coppia di transistori (M1, M2) MOS di ingresso, definenti un valore di transconduttanza sostanzialmente proporzionale a quello dello stadio (4) transconduttore, ed una seconda coppia di transistori bipolari (Q1, Q2) di uscita accoppiati ai precedenti in configurazione cascode, nonché una seconda porzione (3) circuitale comprendente mezzi (Q4, Q5, Q6, Q7) alimentati in corrente (Ia) da una uscita (C2) della prima porzione (2) differenziale per ottenere in uscita (D4) una corrente (Iu) di alimentazione dello stadio (4) e di valore inversamente proporzionale a parametri della transconduttanza dipendenti dalla temperatura.
ITMI913144A 1991-11-26 1991-11-26 Dispositivo circuitale per neutralizzare la deriva termica di uno stadio differenziale transconduttore IT1252333B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
ITMI913144A IT1252333B (it) 1991-11-26 1991-11-26 Dispositivo circuitale per neutralizzare la deriva termica di uno stadio differenziale transconduttore
EP92830505A EP0544627B1 (en) 1991-11-26 1992-09-18 Circuit for neutralizing thermal drift in a transconductance stage
DE69202751T DE69202751T2 (de) 1991-11-26 1992-09-18 Schaltung zur Temperaturdriftkompensation in einer Transkonduktanzstufe.
US07/982,376 US5365193A (en) 1991-11-26 1992-11-25 Circuit for neutralizing thermal drift in a transconductance stage
JP4316693A JP2879874B2 (ja) 1991-11-26 1992-11-26 トランスコンダクタ差動段用熱ドリフト中和回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI913144A IT1252333B (it) 1991-11-26 1991-11-26 Dispositivo circuitale per neutralizzare la deriva termica di uno stadio differenziale transconduttore

Publications (3)

Publication Number Publication Date
ITMI913144A0 ITMI913144A0 (it) 1991-11-26
ITMI913144A1 ITMI913144A1 (it) 1993-05-26
IT1252333B true IT1252333B (it) 1995-06-08

Family

ID=11361181

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI913144A IT1252333B (it) 1991-11-26 1991-11-26 Dispositivo circuitale per neutralizzare la deriva termica di uno stadio differenziale transconduttore

Country Status (5)

Country Link
US (1) US5365193A (it)
EP (1) EP0544627B1 (it)
JP (1) JP2879874B2 (it)
DE (1) DE69202751T2 (it)
IT (1) IT1252333B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3537569B2 (ja) * 1995-02-27 2004-06-14 松下電器産業株式会社 差動増幅装置
US5748030A (en) * 1996-08-19 1998-05-05 Motorola, Inc. Bias generator providing process and temperature invariant MOSFET transconductance
JP2002232239A (ja) * 2001-02-01 2002-08-16 Akita Kaihatsu Center Ard:Kk 演算増幅器
US6424224B1 (en) * 2001-07-02 2002-07-23 Raytheon Company Auxiliary circuitry for monolithic microwave integrated circuit
GB2393868B (en) * 2002-10-01 2005-11-16 Ericsson Telefon Ab L M Integrated circuit
US6914484B2 (en) 2003-05-09 2005-07-05 Qualcomm, Incorporated Wideband constant-gain voltage amplifier
US7116172B2 (en) * 2004-11-03 2006-10-03 Texas Instruments Incorporated High-swing folded cascode having a novel gain-boost amplifier
US8618787B1 (en) * 2010-12-16 2013-12-31 Xilinx, Inc. Current mirror and high-compliance single-stage amplifier

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5573114A (en) * 1978-11-28 1980-06-02 Nippon Gakki Seizo Kk Output offset control circuit for full step direct-coupled amplifier
NL8001115A (nl) * 1980-02-25 1981-09-16 Philips Nv Geintegreerde schakeling omvattende een aantal spanningsstroomomzetters.
US4618833A (en) * 1985-08-12 1986-10-21 National Semiconductor Corporation Operational amplifier offset trim that does not change the offset potential temperature drift
US4887048A (en) * 1988-01-21 1989-12-12 Texas Instruments Incorporated Differential amplifier having extended common mode input voltage range
US4897613A (en) * 1988-10-27 1990-01-30 Grumman Corporation Temperature-compensated circuit for GaAs ECL output buffer

Also Published As

Publication number Publication date
DE69202751D1 (de) 1995-07-06
US5365193A (en) 1994-11-15
EP0544627B1 (en) 1995-05-31
ITMI913144A1 (it) 1993-05-26
JP2879874B2 (ja) 1999-04-05
JPH07122945A (ja) 1995-05-12
DE69202751T2 (de) 1995-11-09
ITMI913144A0 (it) 1991-11-26
EP0544627A1 (en) 1993-06-02

Similar Documents

Publication Publication Date Title
US3444476A (en) Direct coupled amplifier with feedback for d.c. error correction
KR920020750A (ko) Cmos 대역 갭 기준 회로장치
ES2085896T3 (es) Amplificacion con amplificadores acoplados directamente en cascada.
MY104056A (en) Amplifier circuit.
ES407761A1 (es) Disposicion de circuito con amplificacion de corriente constante, en particular para uso en un circuito estabiliza-dor de corriente.
IT1252333B (it) Dispositivo circuitale per neutralizzare la deriva termica di uno stadio differenziale transconduttore
GB781570A (en) Improvements in and relating to transistor amplifiers
GB1518961A (en) Amplifier circuits
GB1286602A (en) Improvements in or relating to differential amplifiers
KR930007761B1 (en) Oscillator and demodulator circuit
KR940020692A (ko) 집적 회로 증폭 장치(integrated circuit amplifier arrangements)
IT1252392B (it) Stadio transconduttore perfezionato per filtri ad alta frequenza
EP0228843A3 (en) Field-effect transistor amplifier
SE8402806D0 (sv) Aterkopplingsdrivanordning for bildror
GB1048960A (en) Integrated semiconductor amplifier
JPS5461447A (en) Crystal oscillation circuit
KR910007980Y1 (ko) 정전류 회로를 추가한 차동증폭회로
JPS57155810A (en) Negative feedback type amplifier
JPS5478956A (en) Amplified output circuit
GB2113495B (en) Low supply voltage amplifier
JPH0198307A (ja) トランジスタ増幅器
JPS5730406A (en) Class b otl circuit
JPS5711513A (en) Variable gain amplifying circuit
GB843366A (en) Improvements in and relating to transistor amplifiers
SU951647A1 (ru) Повторитель напр жени

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971125