IT1193199B - Dispositivo a trasferimento di carica - Google Patents
Dispositivo a trasferimento di caricaInfo
- Publication number
- IT1193199B IT1193199B IT25282/79A IT2528279A IT1193199B IT 1193199 B IT1193199 B IT 1193199B IT 25282/79 A IT25282/79 A IT 25282/79A IT 2528279 A IT2528279 A IT 2528279A IT 1193199 B IT1193199 B IT 1193199B
- Authority
- IT
- Italy
- Prior art keywords
- transfer device
- charging transfer
- charging
- transfer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/76841—Two-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/7685—Three-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/76858—Four-Phase CCD
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Filters That Use Time-Delay Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7808873A NL7808873A (nl) | 1978-08-29 | 1978-08-29 | Ladinggekoppelde inrichting. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7925282A0 IT7925282A0 (it) | 1979-08-24 |
IT1193199B true IT1193199B (it) | 1988-06-02 |
Family
ID=19831452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT25282/79A IT1193199B (it) | 1978-08-29 | 1979-08-24 | Dispositivo a trasferimento di carica |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5534494A (it) |
AU (1) | AU5027479A (it) |
DE (1) | DE2933883A1 (it) |
FR (1) | FR2435126A1 (it) |
GB (1) | GB2029101A (it) |
IT (1) | IT1193199B (it) |
NL (1) | NL7808873A (it) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3235744A1 (de) * | 1982-09-27 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Transversalfilter mit paralleleingaengen |
DE3235678A1 (de) * | 1982-09-27 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Transversalfilter mit einem analogen schieberegister |
JPS6085419A (ja) * | 1983-10-14 | 1985-05-14 | Matsushita Electric Ind Co Ltd | 磁気記録媒体 |
US4965648A (en) * | 1988-07-07 | 1990-10-23 | Tektronix, Inc. | Tilted channel, serial-parallel-serial, charge-coupled device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4910680A (it) * | 1972-05-24 | 1974-01-30 |
-
1978
- 1978-08-29 NL NL7808873A patent/NL7808873A/nl not_active Application Discontinuation
-
1979
- 1979-08-22 DE DE19792933883 patent/DE2933883A1/de not_active Withdrawn
- 1979-08-24 IT IT25282/79A patent/IT1193199B/it active
- 1979-08-24 AU AU50274/79A patent/AU5027479A/en not_active Abandoned
- 1979-08-24 GB GB7929512A patent/GB2029101A/en not_active Withdrawn
- 1979-08-25 JP JP10770779A patent/JPS5534494A/ja active Pending
- 1979-08-27 FR FR7921477A patent/FR2435126A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
NL7808873A (nl) | 1980-03-04 |
IT7925282A0 (it) | 1979-08-24 |
FR2435126A1 (fr) | 1980-03-28 |
AU5027479A (en) | 1980-03-06 |
GB2029101A (en) | 1980-03-12 |
DE2933883A1 (de) | 1980-03-13 |
JPS5534494A (en) | 1980-03-11 |
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