IT1192294B - Dispositivo di memorizzazione,a stato solido,a porta flottante - Google Patents

Dispositivo di memorizzazione,a stato solido,a porta flottante

Info

Publication number
IT1192294B
IT1192294B IT30667/78A IT3066778A IT1192294B IT 1192294 B IT1192294 B IT 1192294B IT 30667/78 A IT30667/78 A IT 30667/78A IT 3066778 A IT3066778 A IT 3066778A IT 1192294 B IT1192294 B IT 1192294B
Authority
IT
Italy
Prior art keywords
storage device
solid state
floating door
floating
door
Prior art date
Application number
IT30667/78A
Other languages
English (en)
Other versions
IT7830667A0 (it
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7830667A0 publication Critical patent/IT7830667A0/it
Application granted granted Critical
Publication of IT1192294B publication Critical patent/IT1192294B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
IT30667/78A 1977-12-27 1978-12-06 Dispositivo di memorizzazione,a stato solido,a porta flottante IT1192294B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/864,766 US4162504A (en) 1977-12-27 1977-12-27 Floating gate solid-state storage device

Publications (2)

Publication Number Publication Date
IT7830667A0 IT7830667A0 (it) 1978-12-06
IT1192294B true IT1192294B (it) 1988-03-31

Family

ID=25344024

Family Applications (1)

Application Number Title Priority Date Filing Date
IT30667/78A IT1192294B (it) 1977-12-27 1978-12-06 Dispositivo di memorizzazione,a stato solido,a porta flottante

Country Status (5)

Country Link
US (1) US4162504A (it)
JP (1) JPS5497338A (it)
DE (1) DE2854669A1 (it)
GB (1) GB2011168B (it)
IT (1) IT1192294B (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2844878A1 (de) * 1978-10-14 1980-04-30 Itt Ind Gmbh Deutsche Integrierbarer isolierschicht-feldeffekttransistor
DE2845328C2 (de) * 1978-10-18 1986-04-30 Deutsche Itt Industries Gmbh, 7800 Freiburg Speichertransistor
US4297719A (en) * 1979-08-10 1981-10-27 Rca Corporation Electrically programmable control gate injected floating gate solid state memory transistor and method of making same
US4253106A (en) * 1979-10-19 1981-02-24 Rca Corporation Gate injected floating gate memory device
US4334347A (en) * 1979-10-19 1982-06-15 Rca Corporation Method of forming an improved gate member for a gate injected floating gate memory device
US4313782A (en) * 1979-11-14 1982-02-02 Rca Corporation Method of manufacturing submicron channel transistors
US4312680A (en) * 1980-03-31 1982-01-26 Rca Corporation Method of manufacturing submicron channel transistors
US4375087C1 (en) * 1980-04-09 2002-01-01 Hughes Aircraft Co Electrically erasable programmable read-only memory
JPS5728364A (en) * 1980-07-28 1982-02-16 Fujitsu Ltd Semiconductor memory device
US4495427A (en) * 1980-12-05 1985-01-22 Rca Corporation Programmable logic gates and networks
GB2089160B (en) * 1980-12-05 1985-04-17 Rca Corp Programmable logic gates and networks
US4477825A (en) * 1981-12-28 1984-10-16 National Semiconductor Corporation Electrically programmable and erasable memory cell
US4590503A (en) * 1983-07-21 1986-05-20 Honeywell Inc. Electrically erasable programmable read only memory
JPS60148169A (ja) * 1984-01-13 1985-08-05 Seiko Instr & Electronics Ltd 半導体不揮発性メモリ
US4735919A (en) * 1986-04-15 1988-04-05 General Electric Company Method of making a floating gate memory cell
US4683640A (en) * 1986-04-15 1987-08-04 Rca Corporation Method of making a floating gate memory cell
IT1201834B (it) * 1986-07-10 1989-02-02 Sgs Microelettronica Spa Dispositivo di memoria non volatile a semiconduttore
US5115289A (en) * 1988-11-21 1992-05-19 Hitachi, Ltd. Semiconductor device and semiconductor memory device
US5455791A (en) * 1994-06-01 1995-10-03 Zaleski; Andrzei Method for erasing data in EEPROM devices on SOI substrates and device therefor
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509342A (it) * 1973-05-22 1975-01-30
JPS5010040A (it) * 1973-05-23 1975-02-01
US3984822A (en) * 1974-12-30 1976-10-05 Intel Corporation Double polycrystalline silicon gate memory device
US4057820A (en) * 1976-06-29 1977-11-08 Westinghouse Electric Corporation Dual gate MNOS transistor

Also Published As

Publication number Publication date
IT7830667A0 (it) 1978-12-06
DE2854669A1 (de) 1979-06-28
US4162504A (en) 1979-07-24
GB2011168A (en) 1979-07-04
GB2011168B (en) 1982-03-24
JPS5497338A (en) 1979-08-01

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