IT1188609B - PROCEDURE FOR THE MANUFACTURE OF MONOLITHIC SEMICONDUCTOR DEVICES CONTAINING BIPOLAR JUNCTION TRANSISTORS, CMOS TRANSISTORS AND COMPLEMENTARY DMOS AND LOW LOSS DIODES - Google Patents

PROCEDURE FOR THE MANUFACTURE OF MONOLITHIC SEMICONDUCTOR DEVICES CONTAINING BIPOLAR JUNCTION TRANSISTORS, CMOS TRANSISTORS AND COMPLEMENTARY DMOS AND LOW LOSS DIODES

Info

Publication number
IT1188609B
IT1188609B IT19231/86A IT1923186A IT1188609B IT 1188609 B IT1188609 B IT 1188609B IT 19231/86 A IT19231/86 A IT 19231/86A IT 1923186 A IT1923186 A IT 1923186A IT 1188609 B IT1188609 B IT 1188609B
Authority
IT
Italy
Prior art keywords
transistors
procedure
manufacture
semiconductor devices
low loss
Prior art date
Application number
IT19231/86A
Other languages
Italian (it)
Other versions
IT8619231A0 (en
Inventor
Franco Bertotti
Carlo Cini
Claudio Contiero
Paola Galbiati
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT19231/86A priority Critical patent/IT1188609B/en
Publication of IT8619231A0 publication Critical patent/IT8619231A0/en
Priority to GB8701769A priority patent/GB2186117B/en
Priority to SE8700351A priority patent/SE502803C2/en
Priority to FR878701076A priority patent/FR2593640B1/en
Priority to NL8700242A priority patent/NL193918C/en
Priority to JP2035387A priority patent/JPS62247558A/en
Priority to DE3702810A priority patent/DE3702810C2/en
Application granted granted Critical
Publication of IT1188609B publication Critical patent/IT1188609B/en
Priority to US07/276,890 priority patent/US4887142A/en

Links

IT19231/86A 1986-01-30 1986-01-30 PROCEDURE FOR THE MANUFACTURE OF MONOLITHIC SEMICONDUCTOR DEVICES CONTAINING BIPOLAR JUNCTION TRANSISTORS, CMOS TRANSISTORS AND COMPLEMENTARY DMOS AND LOW LOSS DIODES IT1188609B (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
IT19231/86A IT1188609B (en) 1986-01-30 1986-01-30 PROCEDURE FOR THE MANUFACTURE OF MONOLITHIC SEMICONDUCTOR DEVICES CONTAINING BIPOLAR JUNCTION TRANSISTORS, CMOS TRANSISTORS AND COMPLEMENTARY DMOS AND LOW LOSS DIODES
GB8701769A GB2186117B (en) 1986-01-30 1987-01-27 Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
SE8700351A SE502803C2 (en) 1986-01-30 1987-01-29 Integrated semiconductor circuit including CMOS and DMOS transistors, bipolar layer transistors and low leakage diodes.
FR878701076A FR2593640B1 (en) 1986-01-30 1987-01-29 INTEGRATED MONOLITHIC SEMICONDUCTOR DEVICE COMPRISING BIPOLAR JUNCTION TRANSISTORS, CMOS AND DMOS TRANSISTORS, LOW LEAKAGE DIODES AND METHOD FOR THE PRODUCTION THEREOF
NL8700242A NL193918C (en) 1986-01-30 1987-01-30 A method of manufacturing a semiconductor device consisting of CMOS transistors, bipolar vertical transistors and diodes.
JP2035387A JPS62247558A (en) 1986-01-30 1987-01-30 Monolithic integrated semiconductor device containing bipolar junction transistor,cmos and dmos transistor and diode with little leakage
DE3702810A DE3702810C2 (en) 1986-01-30 1987-01-30 Method of manufacturing a semiconductor device consisting of CMOS transistors, vertical bipolar transistors and diodes
US07/276,890 US4887142A (en) 1986-01-30 1988-11-28 Monolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19231/86A IT1188609B (en) 1986-01-30 1986-01-30 PROCEDURE FOR THE MANUFACTURE OF MONOLITHIC SEMICONDUCTOR DEVICES CONTAINING BIPOLAR JUNCTION TRANSISTORS, CMOS TRANSISTORS AND COMPLEMENTARY DMOS AND LOW LOSS DIODES

Publications (2)

Publication Number Publication Date
IT8619231A0 IT8619231A0 (en) 1986-01-30
IT1188609B true IT1188609B (en) 1988-01-20

Family

ID=11155973

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19231/86A IT1188609B (en) 1986-01-30 1986-01-30 PROCEDURE FOR THE MANUFACTURE OF MONOLITHIC SEMICONDUCTOR DEVICES CONTAINING BIPOLAR JUNCTION TRANSISTORS, CMOS TRANSISTORS AND COMPLEMENTARY DMOS AND LOW LOSS DIODES

Country Status (2)

Country Link
JP (1) JPS62247558A (en)
IT (1) IT1188609B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721155B2 (en) * 1987-02-19 1998-03-04 株式会社東芝 Semiconductor device
JPH02125462A (en) * 1988-11-04 1990-05-14 Fuji Electric Co Ltd Semiconductor integrated circuit device and manufacture thereof
US5422508A (en) * 1992-09-21 1995-06-06 Siliconix Incorporated BiCDMOS structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4325180A (en) * 1979-02-15 1982-04-20 Texas Instruments Incorporated Process for monolithic integration of logic, control, and high voltage interface circuitry
JPS5944782B2 (en) * 1980-01-31 1984-11-01 日本電信電話株式会社 semiconductor integrated circuit
JPS6072255A (en) * 1983-09-28 1985-04-24 Toshiba Corp Semiconductor ic device and manufacture thereof
JPS60249366A (en) * 1984-05-25 1985-12-10 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS62247558A (en) 1987-10-28
IT8619231A0 (en) 1986-01-30

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