IT1188609B - PROCEDURE FOR THE MANUFACTURE OF MONOLITHIC SEMICONDUCTOR DEVICES CONTAINING BIPOLAR JUNCTION TRANSISTORS, CMOS TRANSISTORS AND COMPLEMENTARY DMOS AND LOW LOSS DIODES - Google Patents
PROCEDURE FOR THE MANUFACTURE OF MONOLITHIC SEMICONDUCTOR DEVICES CONTAINING BIPOLAR JUNCTION TRANSISTORS, CMOS TRANSISTORS AND COMPLEMENTARY DMOS AND LOW LOSS DIODESInfo
- Publication number
- IT1188609B IT1188609B IT19231/86A IT1923186A IT1188609B IT 1188609 B IT1188609 B IT 1188609B IT 19231/86 A IT19231/86 A IT 19231/86A IT 1923186 A IT1923186 A IT 1923186A IT 1188609 B IT1188609 B IT 1188609B
- Authority
- IT
- Italy
- Prior art keywords
- transistors
- procedure
- manufacture
- semiconductor devices
- low loss
- Prior art date
Links
- 230000000295 complement effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT19231/86A IT1188609B (en) | 1986-01-30 | 1986-01-30 | PROCEDURE FOR THE MANUFACTURE OF MONOLITHIC SEMICONDUCTOR DEVICES CONTAINING BIPOLAR JUNCTION TRANSISTORS, CMOS TRANSISTORS AND COMPLEMENTARY DMOS AND LOW LOSS DIODES |
GB8701769A GB2186117B (en) | 1986-01-30 | 1987-01-27 | Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication |
SE8700351A SE502803C2 (en) | 1986-01-30 | 1987-01-29 | Integrated semiconductor circuit including CMOS and DMOS transistors, bipolar layer transistors and low leakage diodes. |
FR878701076A FR2593640B1 (en) | 1986-01-30 | 1987-01-29 | INTEGRATED MONOLITHIC SEMICONDUCTOR DEVICE COMPRISING BIPOLAR JUNCTION TRANSISTORS, CMOS AND DMOS TRANSISTORS, LOW LEAKAGE DIODES AND METHOD FOR THE PRODUCTION THEREOF |
DE3702810A DE3702810C2 (en) | 1986-01-30 | 1987-01-30 | Method of manufacturing a semiconductor device consisting of CMOS transistors, vertical bipolar transistors and diodes |
JP2035387A JPS62247558A (en) | 1986-01-30 | 1987-01-30 | Monolithic integrated semiconductor device containing bipolar junction transistor,cmos and dmos transistor and diode with little leakage |
NL8700242A NL193918C (en) | 1986-01-30 | 1987-01-30 | A method of manufacturing a semiconductor device consisting of CMOS transistors, bipolar vertical transistors and diodes. |
US07/276,890 US4887142A (en) | 1986-01-30 | 1988-11-28 | Monolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabrication |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT19231/86A IT1188609B (en) | 1986-01-30 | 1986-01-30 | PROCEDURE FOR THE MANUFACTURE OF MONOLITHIC SEMICONDUCTOR DEVICES CONTAINING BIPOLAR JUNCTION TRANSISTORS, CMOS TRANSISTORS AND COMPLEMENTARY DMOS AND LOW LOSS DIODES |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8619231A0 IT8619231A0 (en) | 1986-01-30 |
IT1188609B true IT1188609B (en) | 1988-01-20 |
Family
ID=11155973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT19231/86A IT1188609B (en) | 1986-01-30 | 1986-01-30 | PROCEDURE FOR THE MANUFACTURE OF MONOLITHIC SEMICONDUCTOR DEVICES CONTAINING BIPOLAR JUNCTION TRANSISTORS, CMOS TRANSISTORS AND COMPLEMENTARY DMOS AND LOW LOSS DIODES |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS62247558A (en) |
IT (1) | IT1188609B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2721155B2 (en) * | 1987-02-19 | 1998-03-04 | 株式会社東芝 | Semiconductor device |
JPH02125462A (en) * | 1988-11-04 | 1990-05-14 | Fuji Electric Co Ltd | Semiconductor integrated circuit device and manufacture thereof |
US5422508A (en) * | 1992-09-21 | 1995-06-06 | Siliconix Incorporated | BiCDMOS structure |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4325180A (en) * | 1979-02-15 | 1982-04-20 | Texas Instruments Incorporated | Process for monolithic integration of logic, control, and high voltage interface circuitry |
JPS5944782B2 (en) * | 1980-01-31 | 1984-11-01 | 日本電信電話株式会社 | semiconductor integrated circuit |
JPS6072255A (en) * | 1983-09-28 | 1985-04-24 | Toshiba Corp | Semiconductor ic device and manufacture thereof |
JPS60249366A (en) * | 1984-05-25 | 1985-12-10 | Hitachi Ltd | Semiconductor device |
-
1986
- 1986-01-30 IT IT19231/86A patent/IT1188609B/en active
-
1987
- 1987-01-30 JP JP2035387A patent/JPS62247558A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS62247558A (en) | 1987-10-28 |
IT8619231A0 (en) | 1986-01-30 |
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