IT1165434B - Processo per formare collegamenti in sistemi di metallurgia a piu' livelli - Google Patents

Processo per formare collegamenti in sistemi di metallurgia a piu' livelli

Info

Publication number
IT1165434B
IT1165434B IT28131/79A IT2813179A IT1165434B IT 1165434 B IT1165434 B IT 1165434B IT 28131/79 A IT28131/79 A IT 28131/79A IT 2813179 A IT2813179 A IT 2813179A IT 1165434 B IT1165434 B IT 1165434B
Authority
IT
Italy
Prior art keywords
forming connections
level metallurgy
metallurgy systems
systems
level
Prior art date
Application number
IT28131/79A
Other languages
English (en)
Other versions
IT7928131A0 (it
Inventor
Hormazdyar Minocher Dalal
Bisweswar Patnaik
Homi Gustadji Sarkary
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7928131A0 publication Critical patent/IT7928131A0/it
Application granted granted Critical
Publication of IT1165434B publication Critical patent/IT1165434B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4647—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits by applying an insulating layer around previously made via studs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IT28131/79A 1978-12-29 1979-12-18 Processo per formare collegamenti in sistemi di metallurgia a piu' livelli IT1165434B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97457278A 1978-12-29 1978-12-29

Publications (2)

Publication Number Publication Date
IT7928131A0 IT7928131A0 (it) 1979-12-18
IT1165434B true IT1165434B (it) 1987-04-22

Family

ID=25522196

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28131/79A IT1165434B (it) 1978-12-29 1979-12-18 Processo per formare collegamenti in sistemi di metallurgia a piu' livelli

Country Status (5)

Country Link
EP (1) EP0013728B1 (it)
JP (1) JPS5591843A (it)
CA (1) CA1120611A (it)
DE (1) DE2966841D1 (it)
IT (1) IT1165434B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6044829B2 (ja) * 1982-03-18 1985-10-05 富士通株式会社 半導体装置の製造方法
DE3232837A1 (de) * 1982-09-03 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer 2-ebenen-metallisierung fuer halbleiterbauelemente, insbesondere fuer leistungshalbleiterbauelemente wie thyristoren
GB8316476D0 (en) * 1983-06-16 1983-07-20 Plessey Co Plc Producing layered structure
DE3331759A1 (de) * 1983-09-02 1985-03-21 Siemens AG, 1000 Berlin und 8000 München Integrierte halbleiterschaltung mit einer aus aluminium oder aus einer aluminium-legierung bestehenden mehrlagenverdrahtung und verfahren zu ihrer herstellung.
US4672420A (en) * 1984-03-26 1987-06-09 Advanced Micro Devices, Inc. Integrated circuit structure having conductive, protective layer for multilayer metallization to permit reworking
US4541168A (en) * 1984-10-29 1985-09-17 International Business Machines Corporation Method for making metal contact studs between first level metal and regions of a semiconductor device compatible with polyimide-filled deep trench isolation schemes
JPS61161740A (ja) * 1985-01-07 1986-07-22 モトロ−ラ・インコ−ポレ−テツド 多層金属化集積回路およびその製造方法
DE3686490T2 (de) * 1985-01-22 1993-03-18 Fairchild Semiconductor Halbleiterstruktur.
JP3708732B2 (ja) * 1998-12-25 2005-10-19 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
CN113380144B (zh) * 2021-06-07 2022-11-25 武汉天马微电子有限公司 一种显示面板及显示装置
CN113766758B (zh) * 2021-09-30 2023-04-11 深圳市电通材料技术有限公司 一种立体线路的生成方法和线路板

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4851595A (it) * 1971-10-29 1973-07-19
US4029562A (en) * 1976-04-29 1977-06-14 Ibm Corporation Forming feedthrough connections for multi-level interconnections metallurgy systems

Also Published As

Publication number Publication date
EP0013728A1 (de) 1980-08-06
EP0013728B1 (de) 1984-03-21
JPS5591843A (en) 1980-07-11
IT7928131A0 (it) 1979-12-18
CA1120611A (en) 1982-03-23
DE2966841D1 (en) 1984-04-26

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