IT1122538B - COMPLEX OF MEMORY DEVICES, FOR READING OPERATIONS ONLY, WITH FLOATING DOOR, ELECTRICALLY PROGRAMMABLE - Google Patents

COMPLEX OF MEMORY DEVICES, FOR READING OPERATIONS ONLY, WITH FLOATING DOOR, ELECTRICALLY PROGRAMMABLE

Info

Publication number
IT1122538B
IT1122538B IT25552/79A IT2555279A IT1122538B IT 1122538 B IT1122538 B IT 1122538B IT 25552/79 A IT25552/79 A IT 25552/79A IT 2555279 A IT2555279 A IT 2555279A IT 1122538 B IT1122538 B IT 1122538B
Authority
IT
Italy
Prior art keywords
complex
memory devices
electrically programmable
reading operations
floating door
Prior art date
Application number
IT25552/79A
Other languages
Italian (it)
Other versions
IT7925552A0 (en
Inventor
Teng Hsu Sheng
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7925552A0 publication Critical patent/IT7925552A0/en
Application granted granted Critical
Publication of IT1122538B publication Critical patent/IT1122538B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
IT25552/79A 1978-09-28 1979-09-07 COMPLEX OF MEMORY DEVICES, FOR READING OPERATIONS ONLY, WITH FLOATING DOOR, ELECTRICALLY PROGRAMMABLE IT1122538B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94672278A 1978-09-28 1978-09-28

Publications (2)

Publication Number Publication Date
IT7925552A0 IT7925552A0 (en) 1979-09-07
IT1122538B true IT1122538B (en) 1986-04-23

Family

ID=25484885

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25552/79A IT1122538B (en) 1978-09-28 1979-09-07 COMPLEX OF MEMORY DEVICES, FOR READING OPERATIONS ONLY, WITH FLOATING DOOR, ELECTRICALLY PROGRAMMABLE

Country Status (6)

Country Link
JP (1) JPS5546598A (en)
DE (1) DE2937952C2 (en)
FR (1) FR2437676A1 (en)
GB (1) GB2032687B (en)
IT (1) IT1122538B (en)
SE (1) SE7907193L (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409723A (en) * 1980-04-07 1983-10-18 Eliyahou Harari Method of forming non-volatile EPROM and EEPROM with increased efficiency
US4328565A (en) 1980-04-07 1982-05-04 Eliyahou Harari Non-volatile eprom with increased efficiency
DE3141390A1 (en) * 1981-10-19 1983-04-28 Deutsche Itt Industries Gmbh, 7800 Freiburg FLOATING GATE STORAGE CELL WHICH IS WRITTEN AND DELETED BY INJECTION OF HOT CARRIER
FR2524714B1 (en) * 1982-04-01 1986-05-02 Suwa Seikosha Kk THIN FILM TRANSISTOR
US4639893A (en) * 1984-05-15 1987-01-27 Wafer Scale Integration, Inc. Self-aligned split gate EPROM
US4795719A (en) * 1984-05-15 1989-01-03 Waferscale Integration, Inc. Self-aligned split gate eprom process
US4868629A (en) * 1984-05-15 1989-09-19 Waferscale Integration, Inc. Self-aligned split gate EPROM
US4783766A (en) * 1986-05-30 1988-11-08 Seeq Technology, Inc. Block electrically erasable EEPROM
FR2621737B1 (en) * 1987-10-09 1991-04-05 Thomson Semiconducteurs INTEGRATED CIRCUIT MEMORY
US5087584A (en) * 1990-04-30 1992-02-11 Intel Corporation Process for fabricating a contactless floating gate memory array utilizing wordline trench vias
KR100241524B1 (en) * 1996-12-28 2000-02-01 김영환 Flash memory cell
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
DE2525097C3 (en) * 1975-06-05 1982-08-05 Siemens AG, 1000 Berlin und 8000 München Method of operating an n-channel memory FET
AT365000B (en) * 1974-09-20 1981-11-25 Siemens Ag N-CHANNEL STORAGE FET
DE2643948C2 (en) * 1976-09-29 1981-10-15 Siemens AG, 1000 Berlin und 8000 München Matrix memory FETs and methods of making them
JPS53108247A (en) * 1976-12-27 1978-09-20 Texas Instruments Inc Electrically programmable floating gate semiconductor memory

Also Published As

Publication number Publication date
IT7925552A0 (en) 1979-09-07
JPS5732514B2 (en) 1982-07-12
JPS5546598A (en) 1980-04-01
DE2937952A1 (en) 1980-04-03
GB2032687A (en) 1980-05-08
FR2437676A1 (en) 1980-04-25
SE7907193L (en) 1980-03-29
FR2437676B1 (en) 1982-12-17
GB2032687B (en) 1983-03-23
DE2937952C2 (en) 1983-04-14

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