IT1086508B - Dispositivo per fondere a zone progressive,senza crogiulo,bacchette di materiale semiconduttore - Google Patents

Dispositivo per fondere a zone progressive,senza crogiulo,bacchette di materiale semiconduttore

Info

Publication number
IT1086508B
IT1086508B IT2679277A IT2679277A IT1086508B IT 1086508 B IT1086508 B IT 1086508B IT 2679277 A IT2679277 A IT 2679277A IT 2679277 A IT2679277 A IT 2679277A IT 1086508 B IT1086508 B IT 1086508B
Authority
IT
Italy
Prior art keywords
crucible
sticks
melting
semiconductive material
progressive zones
Prior art date
Application number
IT2679277A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1086508B publication Critical patent/IT1086508B/it

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/20Heating of the molten zone by induction, e.g. hot wire technique

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Induction Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Furnace Details (AREA)
IT2679277A 1976-08-23 1977-08-19 Dispositivo per fondere a zone progressive,senza crogiulo,bacchette di materiale semiconduttore IT1086508B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762637939 DE2637939C3 (de) 1976-08-23 1976-08-23 Vorrichtung für das tiegelfreie Zonenschmelzen von Halbleiterstäben

Publications (1)

Publication Number Publication Date
IT1086508B true IT1086508B (it) 1985-05-28

Family

ID=5986149

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2679277A IT1086508B (it) 1976-08-23 1977-08-19 Dispositivo per fondere a zone progressive,senza crogiulo,bacchette di materiale semiconduttore

Country Status (4)

Country Link
JP (1) JPS6050758B2 (it)
DE (1) DE2637939C3 (it)
DK (1) DK372977A (it)
IT (1) IT1086508B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2929119A1 (de) * 1979-07-18 1981-02-05 Siemens Ag Verfahren und vorrichtung zum herstellen von silicium durch tiegelfreies zonenschmelzen
US7113535B2 (en) * 2004-05-21 2006-09-26 Ajax Tocco Magnethermic Corporation Induction furnace for melting granular materials
JP4730238B2 (ja) * 2006-07-21 2011-07-20 トヨタ自動車株式会社 V型エンジン
JP6780377B2 (ja) * 2016-08-30 2020-11-04 日亜化学工業株式会社 発光装置

Also Published As

Publication number Publication date
DK372977A (da) 1978-02-24
JPS5326705A (en) 1978-03-13
DE2637939A1 (de) 1978-03-02
DE2637939B2 (de) 1978-11-30
DE2637939C3 (de) 1979-07-26
JPS6050758B2 (ja) 1985-11-09

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