IT1079558B - Memoria perfezionata - Google Patents
Memoria perfezionataInfo
- Publication number
- IT1079558B IT1079558B IT19958/77A IT1995877A IT1079558B IT 1079558 B IT1079558 B IT 1079558B IT 19958/77 A IT19958/77 A IT 19958/77A IT 1995877 A IT1995877 A IT 1995877A IT 1079558 B IT1079558 B IT 1079558B
- Authority
- IT
- Italy
- Prior art keywords
- improved memory
- memory
- improved
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/10—DRAM devices comprising bipolar components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/662,492 US4090254A (en) | 1976-03-01 | 1976-03-01 | Charge injector transistor memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1079558B true IT1079558B (it) | 1985-05-13 |
Family
ID=24657943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT19958/77A IT1079558B (it) | 1976-03-01 | 1977-02-04 | Memoria perfezionata |
Country Status (7)
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4247861A (en) * | 1979-03-09 | 1981-01-27 | Rca Corporation | High performance electrically alterable read-only memory (EAROM) |
| US4276616A (en) * | 1979-04-23 | 1981-06-30 | Fairchild Camera & Instrument Corp. | Merged bipolar/field-effect bistable memory cell |
| JPS56163585A (en) * | 1980-05-17 | 1981-12-16 | Semiconductor Res Found | Semiconductor memory |
| US4395723A (en) * | 1980-05-27 | 1983-07-26 | Eliyahou Harari | Floating substrate dynamic RAM cell with lower punch-through means |
| DE3330013A1 (de) * | 1983-08-19 | 1985-02-28 | Siemens AG, 1000 Berlin und 8000 München | Statische speicherzelle |
| JPS60136084A (ja) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | 半導体集積回路装置 |
| US4578779A (en) * | 1984-06-25 | 1986-03-25 | International Business Machines Corporation | Voltage mode operation scheme for bipolar arrays |
| US4596002A (en) * | 1984-06-25 | 1986-06-17 | International Business Machines Corporation | Random access memory RAM employing complementary transistor switch (CTS) memory cells |
| US4598390A (en) * | 1984-06-25 | 1986-07-01 | International Business Machines Corporation | Random access memory RAM employing complementary transistor switch (CTS) memory cells |
| US4791611A (en) * | 1985-09-11 | 1988-12-13 | University Of Waterloo | VLSI dynamic memory |
| US5060194A (en) * | 1989-03-31 | 1991-10-22 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a bicmos memory cell |
| TW260816B (US20030199744A1-20031023-C00003.png) * | 1991-12-16 | 1995-10-21 | Philips Nv | |
| TW289168B (US20030199744A1-20031023-C00003.png) * | 1991-12-16 | 1996-10-21 | Philips Nv | |
| US5448513A (en) * | 1993-12-02 | 1995-09-05 | Regents Of The University Of California | Capacitorless DRAM device on silicon-on-insulator substrate |
| US5835436A (en) | 1995-07-03 | 1998-11-10 | Mitsubishi Denki Kabushiki Kaisha | Dynamic type semiconductor memory device capable of transferring data between array blocks at high speed |
| US5909400A (en) * | 1997-08-22 | 1999-06-01 | International Business Machines Corporation | Three device BICMOS gain cell |
| US6229161B1 (en) | 1998-06-05 | 2001-05-08 | Stanford University | Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches |
| US6690038B1 (en) | 1999-06-05 | 2004-02-10 | T-Ram, Inc. | Thyristor-based device over substrate surface |
| US6621725B2 (en) * | 2000-08-17 | 2003-09-16 | Kabushiki Kaisha Toshiba | Semiconductor memory device with floating storage bulk region and method of manufacturing the same |
| US7456439B1 (en) | 2001-03-22 | 2008-11-25 | T-Ram Semiconductor, Inc. | Vertical thyristor-based memory with trench isolation and its method of fabrication |
| US6727528B1 (en) | 2001-03-22 | 2004-04-27 | T-Ram, Inc. | Thyristor-based device including trench dielectric isolation for thyristor-body regions |
| US6804162B1 (en) | 2001-04-05 | 2004-10-12 | T-Ram, Inc. | Read-modify-write memory using read-or-write banks |
| US6583452B1 (en) | 2001-12-17 | 2003-06-24 | T-Ram, Inc. | Thyristor-based device having extended capacitive coupling |
| US6832300B2 (en) | 2002-03-20 | 2004-12-14 | Hewlett-Packard Development Company, L.P. | Methods and apparatus for control of asynchronous cache |
| KR100620658B1 (ko) * | 2004-05-17 | 2006-09-14 | 주식회사 하이닉스반도체 | 나노 튜브 셀 및 그 나노 튜브 셀과 이중 비트라인 센싱구조를 갖는 셀 어레이 회로 |
| US7638385B2 (en) * | 2005-05-02 | 2009-12-29 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device and structure therefor |
| US8014199B2 (en) * | 2006-05-22 | 2011-09-06 | Spansion Llc | Memory system with switch element |
| US7781797B2 (en) * | 2006-06-29 | 2010-08-24 | International Business Machines Corporation | One-transistor static random access memory with integrated vertical PNPN device |
| US8035126B2 (en) * | 2007-10-29 | 2011-10-11 | International Business Machines Corporation | One-transistor static random access memory with integrated vertical PNPN device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3390273A (en) * | 1966-08-08 | 1968-06-25 | Fairchild Camera Instr Co | Electronic shutter with gating and storage features |
| US3697962A (en) * | 1970-11-27 | 1972-10-10 | Ibm | Two device monolithic bipolar memory array |
| US3699540A (en) * | 1970-12-31 | 1972-10-17 | Bell Telephone Labor Inc | Two-terminal transistor memory utilizing collector-base avalanche breakdown |
| BE792293A (fr) * | 1971-12-09 | 1973-03-30 | Western Electric Co | Dispositif de memoire a semi-conducteur |
| US3827034A (en) * | 1972-09-14 | 1974-07-30 | Ferranti Ltd | Semiconductor information storage devices |
| US3949243A (en) * | 1973-10-18 | 1976-04-06 | Fairchild Camera And Instrument Corporation | Bipolar memory circuit |
-
1976
- 1976-03-01 US US05/662,492 patent/US4090254A/en not_active Expired - Lifetime
-
1977
- 1977-01-18 FR FR7702065A patent/FR2343312A1/fr active Granted
- 1977-02-04 IT IT19958/77A patent/IT1079558B/it active
- 1977-02-10 JP JP1315477A patent/JPS52106280A/ja active Pending
- 1977-02-15 GB GB6324/77A patent/GB1571424A/en not_active Expired
- 1977-02-21 CA CA272,249A patent/CA1097813A/en not_active Expired
- 1977-02-25 DE DE19772708126 patent/DE2708126A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| FR2343312A1 (fr) | 1977-09-30 |
| JPS52106280A (en) | 1977-09-06 |
| FR2343312B1 (US20030199744A1-20031023-C00003.png) | 1979-03-09 |
| GB1571424A (en) | 1980-07-16 |
| US4090254A (en) | 1978-05-16 |
| CA1097813A (en) | 1981-03-17 |
| DE2708126A1 (de) | 1977-09-15 |
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