IT1070023B - COMPLEMENTARY TRANSISTOR MANUFACTURING PROCESS - Google Patents
COMPLEMENTARY TRANSISTOR MANUFACTURING PROCESSInfo
- Publication number
- IT1070023B IT1070023B IT2730876A IT2730876A IT1070023B IT 1070023 B IT1070023 B IT 1070023B IT 2730876 A IT2730876 A IT 2730876A IT 2730876 A IT2730876 A IT 2730876A IT 1070023 B IT1070023 B IT 1070023B
- Authority
- IT
- Italy
- Prior art keywords
- manufacturing process
- transistor manufacturing
- complementary transistor
- complementary
- transistor
- Prior art date
Links
- 230000000295 complement effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63496475A | 1975-11-24 | 1975-11-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1070023B true IT1070023B (en) | 1985-03-25 |
Family
ID=24545858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2730876A IT1070023B (en) | 1975-11-24 | 1976-09-17 | COMPLEMENTARY TRANSISTOR MANUFACTURING PROCESS |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5264882A (en) |
CA (1) | CA1053376A (en) |
DE (1) | DE2651449A1 (en) |
FR (1) | FR2347777A1 (en) |
IT (1) | IT1070023B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4196440A (en) * | 1978-05-25 | 1980-04-01 | International Business Machines Corporation | Lateral PNP or NPN with a high gain |
FR2457564A1 (en) * | 1979-05-23 | 1980-12-19 | Thomson Csf | Bipolar integrated circuit pnp transistor - has p-type substrate with p-implantation zones and n-type epitaxial layer |
US4339767A (en) * | 1980-05-05 | 1982-07-13 | International Business Machines Corporation | High performance PNP and NPN transistor structure |
US5279987A (en) * | 1991-10-31 | 1994-01-18 | International Business Machines Corporation | Fabricating planar complementary patterned subcollectors with silicon epitaxial layer |
-
1976
- 1976-09-17 IT IT2730876A patent/IT1070023B/en active
- 1976-09-22 FR FR7629494A patent/FR2347777A1/en not_active Withdrawn
- 1976-10-27 JP JP51128423A patent/JPS5264882A/en active Pending
- 1976-11-11 DE DE19762651449 patent/DE2651449A1/en active Pending
- 1976-11-24 CA CA266,527A patent/CA1053376A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1053376A (en) | 1979-04-24 |
DE2651449A1 (en) | 1977-05-26 |
FR2347777A1 (en) | 1977-11-04 |
JPS5264882A (en) | 1977-05-28 |
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