IT1059075B - Procedimento per fabbricare mono cristalli di silicio drogati con attivazione neutronica - Google Patents
Procedimento per fabbricare mono cristalli di silicio drogati con attivazione neutronicaInfo
- Publication number
- IT1059075B IT1059075B IT2223276A IT2223276A IT1059075B IT 1059075 B IT1059075 B IT 1059075B IT 2223276 A IT2223276 A IT 2223276A IT 2223276 A IT2223276 A IT 2223276A IT 1059075 B IT1059075 B IT 1059075B
- Authority
- IT
- Italy
- Prior art keywords
- neutronic
- activation
- procedure
- silicon crystals
- manufacturing single
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 230000004913 activation Effects 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- High Energy & Nuclear Physics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752516514 DE2516514C3 (de) | 1975-04-15 | Verfahren zum Herstellen von durch Neutronenaktivierung dotierten SiIiciumeinkristallen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1059075B true IT1059075B (it) | 1982-05-31 |
Family
ID=5944002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2223276A IT1059075B (it) | 1975-04-15 | 1976-04-13 | Procedimento per fabbricare mono cristalli di silicio drogati con attivazione neutronica |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS51124376A (enrdf_load_stackoverflow) |
| BE (1) | BE837370A (enrdf_load_stackoverflow) |
| DK (1) | DK104576A (enrdf_load_stackoverflow) |
| IT (1) | IT1059075B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62148312U (enrdf_load_stackoverflow) * | 1986-03-13 | 1987-09-19 | ||
| JP5879806B2 (ja) * | 2011-08-09 | 2016-03-08 | 富士電機株式会社 | Ｎｔｄ半導体基板へのレーザー印字方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5438056B2 (enrdf_load_stackoverflow) * | 1971-09-28 | 1979-11-19 | ||
| NL7304259A (enrdf_load_stackoverflow) * | 1972-03-28 | 1973-10-02 |
-
1976
- 1976-01-07 BE BE163361A patent/BE837370A/xx not_active IP Right Cessation
- 1976-03-10 DK DK104576A patent/DK104576A/da not_active Application Discontinuation
- 1976-03-18 JP JP2869176A patent/JPS51124376A/ja active Granted
- 1976-04-13 IT IT2223276A patent/IT1059075B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2516514A1 (de) | 1976-10-21 |
| DK104576A (da) | 1976-10-16 |
| BE837370A (fr) | 1976-05-03 |
| JPS51124376A (en) | 1976-10-29 |
| JPS5549764B2 (enrdf_load_stackoverflow) | 1980-12-13 |
| DE2516514B2 (de) | 1977-05-05 |
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