IT1014609B - Dispositivo amplificatore a stato solido e circuito per lo stesso - Google Patents

Dispositivo amplificatore a stato solido e circuito per lo stesso

Info

Publication number
IT1014609B
IT1014609B IT21743/74A IT2174374A IT1014609B IT 1014609 B IT1014609 B IT 1014609B IT 21743/74 A IT21743/74 A IT 21743/74A IT 2174374 A IT2174374 A IT 2174374A IT 1014609 B IT1014609 B IT 1014609B
Authority
IT
Italy
Prior art keywords
circuit
same
solid state
amplifier device
state amplifier
Prior art date
Application number
IT21743/74A
Other languages
English (en)
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of IT1014609B publication Critical patent/IT1014609B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0895Tunnel injectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/685Hi-Lo semiconductor devices, e.g. memory devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
IT21743/74A 1973-04-26 1974-04-22 Dispositivo amplificatore a stato solido e circuito per lo stesso IT1014609B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35468773A 1973-04-26 1973-04-26

Publications (1)

Publication Number Publication Date
IT1014609B true IT1014609B (it) 1977-04-30

Family

ID=23394490

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21743/74A IT1014609B (it) 1973-04-26 1974-04-22 Dispositivo amplificatore a stato solido e circuito per lo stesso

Country Status (8)

Country Link
US (1) US4015282A (it)
JP (1) JPS579517B2 (it)
CA (1) CA1024221A (it)
DE (1) DE2417248A1 (it)
FR (1) FR2227643B1 (it)
GB (1) GB1469814A (it)
IT (1) IT1014609B (it)
NL (1) NL7405351A (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2291609A1 (fr) * 1974-11-14 1976-06-11 Energy Conversion Devices Inc Circuit logique statique
US4160986A (en) * 1976-08-02 1979-07-10 Johnson David M Bipolar transistors having fixed gain characteristics
JPS5683050A (en) * 1979-12-12 1981-07-07 Toshiba Corp Semiconductor device
WO1985003599A1 (en) * 1984-02-09 1985-08-15 Ncr Corporation Programmable read-only memory cell and method of fabrication
NL8501769A (nl) * 1984-10-02 1986-05-01 Imec Interuniversitair Micro E Bipolaire heterojunctie-transistor en werkwijze voor de vervaardiging daarvan.
GB8623177D0 (en) * 1986-09-26 1987-01-14 Raychem Ltd Circuit protection device
GB8623176D0 (en) * 1986-09-26 1987-01-14 Raychem Ltd Circuit protection device
DE4002431A1 (de) * 1990-01-27 1991-08-01 Philips Patentverwaltung Sensormatrix
US6969867B2 (en) * 2003-03-10 2005-11-29 Energy Conversion Devices, Inc. Field effect chalcogenide devices
US7529123B2 (en) * 2003-09-08 2009-05-05 Ovonyx, Inc. Method of operating a multi-terminal electronic device
US7074707B2 (en) * 2003-09-15 2006-07-11 International Business Machines Corporation Method of fabricating a connection device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL298324A (it) * 1962-09-28 1900-01-01
US3656032A (en) * 1969-09-22 1972-04-11 Energy Conversion Devices Inc Controllable semiconductor switch
US3748501A (en) * 1971-04-30 1973-07-24 Energy Conversion Devices Inc Multi-terminal amorphous electronic control device
US3761896A (en) * 1972-04-18 1973-09-25 Ibm Memory array of cells containing bistable switchable resistors

Also Published As

Publication number Publication date
NL7405351A (it) 1974-10-29
JPS5015484A (it) 1975-02-18
CA1024221A (en) 1978-01-10
DE2417248A1 (de) 1974-11-21
FR2227643A1 (it) 1974-11-22
US4015282A (en) 1977-03-29
FR2227643B1 (it) 1982-09-03
JPS579517B2 (it) 1982-02-22
GB1469814A (en) 1977-04-06

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