IT1012682B - MEMORY ELEMENT WITH SINGLE BIPOLAR TRANSISTOR - Google Patents

MEMORY ELEMENT WITH SINGLE BIPOLAR TRANSISTOR

Info

Publication number
IT1012682B
IT1012682B IT23005/74A IT2300574A IT1012682B IT 1012682 B IT1012682 B IT 1012682B IT 23005/74 A IT23005/74 A IT 23005/74A IT 2300574 A IT2300574 A IT 2300574A IT 1012682 B IT1012682 B IT 1012682B
Authority
IT
Italy
Prior art keywords
memory element
bipolar transistor
single bipolar
transistor
memory
Prior art date
Application number
IT23005/74A
Other languages
Italian (it)
Original Assignee
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Signetics Corp filed Critical Signetics Corp
Application granted granted Critical
Publication of IT1012682B publication Critical patent/IT1012682B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0777Vertical bipolar transistor in combination with capacitors only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/10DRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
IT23005/74A 1973-05-21 1974-05-21 MEMORY ELEMENT WITH SINGLE BIPOLAR TRANSISTOR IT1012682B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36249573A 1973-05-21 1973-05-21

Publications (1)

Publication Number Publication Date
IT1012682B true IT1012682B (en) 1977-03-10

Family

ID=23426344

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23005/74A IT1012682B (en) 1973-05-21 1974-05-21 MEMORY ELEMENT WITH SINGLE BIPOLAR TRANSISTOR

Country Status (7)

Country Link
JP (1) JPS5021684A (en)
CA (1) CA1030263A (en)
DE (1) DE2424607A1 (en)
FR (1) FR2231074A1 (en)
GB (1) GB1446386A (en)
IT (1) IT1012682B (en)
NL (1) NL7406749A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210904A (en) * 1976-05-26 1977-01-27 Nippon Kokuen Kogyo Kk Plunger
JPS53111406U (en) * 1977-02-14 1978-09-06
JPS5424627A (en) * 1977-07-27 1979-02-24 Mitsubishi Gas Chemical Co Removinggagent for phtoresist
GB2006523B (en) * 1977-10-13 1982-12-01 Mohsen A M Dynamic ram memory and vertical charge coupled dynamic storage cell therefor
JPS55130079U (en) * 1979-03-09 1980-09-13

Also Published As

Publication number Publication date
GB1446386A (en) 1976-08-18
JPS5021684A (en) 1975-03-07
FR2231074A1 (en) 1974-12-20
NL7406749A (en) 1974-11-25
DE2424607A1 (en) 1974-12-12
CA1030263A (en) 1978-04-25

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