IN2015DN04192A - - Google Patents
Info
- Publication number
- IN2015DN04192A IN2015DN04192A IN4192DEN2015A IN2015DN04192A IN 2015DN04192 A IN2015DN04192 A IN 2015DN04192A IN 4192DEN2015 A IN4192DEN2015 A IN 4192DEN2015A IN 2015DN04192 A IN2015DN04192 A IN 2015DN04192A
- Authority
- IN
- India
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
- H04N25/677—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction for reducing the column or line fixed pattern noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012232422 | 2012-10-19 | ||
PCT/JP2013/078483 WO2014061820A1 (en) | 2012-10-19 | 2013-10-21 | Solid-state image pickup element |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2015DN04192A true IN2015DN04192A (en) | 2015-10-16 |
Family
ID=50488372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN4192DEN2015 IN2015DN04192A (en) | 2012-10-19 | 2015-05-15 |
Country Status (7)
Country | Link |
---|---|
US (3) | US9620558B2 (en) |
EP (1) | EP2911203B1 (en) |
JP (3) | JP6135677B2 (en) |
KR (1) | KR102125673B1 (en) |
CN (3) | CN108551559B (en) |
IN (1) | IN2015DN04192A (en) |
WO (1) | WO2014061820A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6135677B2 (en) * | 2012-10-19 | 2017-05-31 | 株式会社ニコン | Imaging device and imaging apparatus |
US10199422B2 (en) * | 2014-07-09 | 2019-02-05 | Renesas Electronics Corporation | Semiconductor device |
JP6704677B2 (en) * | 2015-03-31 | 2020-06-03 | キヤノン株式会社 | Solid-state imaging device |
TWI701819B (en) * | 2015-06-09 | 2020-08-11 | 日商索尼半導體解決方案公司 | Imaging element, driving method and electronic equipment |
EP3358831B1 (en) * | 2015-09-30 | 2023-12-20 | Nikon Corporation | Image-capturing element and electronic camera |
KR102437162B1 (en) * | 2015-10-12 | 2022-08-29 | 삼성전자주식회사 | Image sensor |
JP7005125B2 (en) * | 2016-04-22 | 2022-01-21 | キヤノン株式会社 | Image sensor, image sensor, and method for manufacturing the image sensor |
JP6889571B2 (en) | 2017-02-24 | 2021-06-18 | キヤノン株式会社 | Imaging device and imaging system |
US10593714B2 (en) * | 2017-07-24 | 2020-03-17 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1107316A3 (en) * | 1999-12-02 | 2004-05-19 | Nikon Corporation | Solid-state image sensor, production method of the same and digital camera |
JP2002314062A (en) * | 2001-04-18 | 2002-10-25 | Canon Inc | Solid-state image sensing device and image sensing system |
JP4826127B2 (en) * | 2005-04-25 | 2011-11-30 | ソニー株式会社 | Solid-state imaging device and manufacturing method thereof |
KR100690912B1 (en) * | 2005-08-12 | 2007-03-09 | 삼성전자주식회사 | 4 shared type image sensor with improved charge transferring characteristics |
JP5034215B2 (en) | 2005-11-02 | 2012-09-26 | 株式会社ニコン | Solid-state imaging device having function of generating focus detection signal |
JP2007127756A (en) * | 2005-11-02 | 2007-05-24 | Nikon Corp | Image stabilizer, optical device, interchangeable lens and camera system |
JP4710660B2 (en) * | 2006-03-10 | 2011-06-29 | 株式会社ニコン | Solid-state imaging device and electronic camera using the same |
JP4952060B2 (en) | 2006-05-26 | 2012-06-13 | 株式会社ニコン | Imaging device |
JP5076528B2 (en) * | 2007-02-06 | 2012-11-21 | 株式会社ニコン | Photoelectric conversion unit connection / separation structure, solid-state imaging device, and imaging apparatus |
JP2008270298A (en) * | 2007-04-16 | 2008-11-06 | Nikon Corp | Solid-state image sensor and imaging apparatus employing the same |
JP2009289927A (en) * | 2008-05-28 | 2009-12-10 | Panasonic Corp | Solid-state imaging device and method of manufacturing the same |
JP5629995B2 (en) * | 2009-09-07 | 2014-11-26 | 株式会社ニコン | Imaging device and imaging apparatus |
JP5651976B2 (en) * | 2010-03-26 | 2015-01-14 | ソニー株式会社 | Solid-state imaging device, manufacturing method thereof, and electronic device |
JP2011221253A (en) * | 2010-04-08 | 2011-11-04 | Sony Corp | Imaging apparatus, solid-state image sensor, imaging method and program |
JP5126291B2 (en) * | 2010-06-07 | 2013-01-23 | 株式会社ニコン | Solid-state image sensor |
US8742309B2 (en) * | 2011-01-28 | 2014-06-03 | Aptina Imaging Corporation | Imagers with depth sensing capabilities |
JP6135677B2 (en) * | 2012-10-19 | 2017-05-31 | 株式会社ニコン | Imaging device and imaging apparatus |
KR102009192B1 (en) * | 2013-02-05 | 2019-08-09 | 삼성전자주식회사 | Unit pixel of image sensor and image sensor including the same |
-
2013
- 2013-10-21 JP JP2014542210A patent/JP6135677B2/en active Active
- 2013-10-21 EP EP13846627.1A patent/EP2911203B1/en active Active
- 2013-10-21 KR KR1020157013034A patent/KR102125673B1/en active IP Right Grant
- 2013-10-21 US US14/436,133 patent/US9620558B2/en active Active
- 2013-10-21 CN CN201810631953.6A patent/CN108551559B/en active Active
- 2013-10-21 WO PCT/JP2013/078483 patent/WO2014061820A1/en active Application Filing
- 2013-10-21 CN CN201380066713.1A patent/CN104871315B/en active Active
- 2013-10-21 CN CN201810631298.4A patent/CN108551558B/en active Active
-
2015
- 2015-05-15 IN IN4192DEN2015 patent/IN2015DN04192A/en unknown
-
2017
- 2017-03-02 US US15/447,756 patent/US10038020B2/en active Active
- 2017-04-26 JP JP2017087402A patent/JP6421836B2/en active Active
-
2018
- 2018-07-02 US US16/025,151 patent/US10580810B2/en active Active
- 2018-08-21 JP JP2018154854A patent/JP7012619B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN108551558B (en) | 2021-03-09 |
JP6421836B2 (en) | 2018-11-14 |
CN108551559A (en) | 2018-09-18 |
EP2911203B1 (en) | 2020-07-08 |
JPWO2014061820A1 (en) | 2016-09-05 |
JP2017135422A (en) | 2017-08-03 |
JP6135677B2 (en) | 2017-05-31 |
US10580810B2 (en) | 2020-03-03 |
US10038020B2 (en) | 2018-07-31 |
CN108551558A (en) | 2018-09-18 |
KR20150070376A (en) | 2015-06-24 |
CN108551559B (en) | 2021-06-22 |
US20180308885A1 (en) | 2018-10-25 |
US9620558B2 (en) | 2017-04-11 |
US20170179175A1 (en) | 2017-06-22 |
US20160111469A1 (en) | 2016-04-21 |
JP2018207121A (en) | 2018-12-27 |
EP2911203A1 (en) | 2015-08-26 |
JP7012619B2 (en) | 2022-01-28 |
WO2014061820A1 (en) | 2014-04-24 |
KR102125673B1 (en) | 2020-06-23 |
EP2911203A4 (en) | 2016-09-14 |
CN104871315A (en) | 2015-08-26 |
CN104871315B (en) | 2018-07-13 |