IN2014KN02866A - - Google Patents

Info

Publication number
IN2014KN02866A
IN2014KN02866A IN2866KON2014A IN2014KN02866A IN 2014KN02866 A IN2014KN02866 A IN 2014KN02866A IN 2866KON2014 A IN2866KON2014 A IN 2866KON2014A IN 2014KN02866 A IN2014KN02866 A IN 2014KN02866A
Authority
IN
India
Prior art keywords
layer
buffer layer
absorber
thin film
solar cells
Prior art date
Application number
Other languages
English (en)
Inventor
Thomas Happ
Stefan Jost
Jörg Palm
Stephan Pohlner
Thomas Dalibor
Roland Dietmüller
Original Assignee
Bengbu Design & Res Inst For Glass Industry
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bengbu Design & Res Inst For Glass Industry filed Critical Bengbu Design & Res Inst For Glass Industry
Publication of IN2014KN02866A publication Critical patent/IN2014KN02866A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
IN2866KON2014 2012-06-20 2013-06-19 IN2014KN02866A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP12172699 2012-06-20
PCT/EP2013/062703 WO2013189968A1 (fr) 2012-06-20 2013-06-19 Système de couches pour cellules solaires en couches minces à couche tampon naxinlsyclz

Publications (1)

Publication Number Publication Date
IN2014KN02866A true IN2014KN02866A (fr) 2015-05-08

Family

ID=47002500

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2866KON2014 IN2014KN02866A (fr) 2012-06-20 2013-06-19

Country Status (8)

Country Link
US (1) US9871155B2 (fr)
EP (1) EP2865011B1 (fr)
JP (1) JP5985052B2 (fr)
KR (1) KR101742541B1 (fr)
CN (1) CN105144401B (fr)
ES (1) ES2772449T3 (fr)
IN (1) IN2014KN02866A (fr)
WO (1) WO2013189968A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9382618B2 (en) * 2014-07-18 2016-07-05 UChicago Argnonne, LLC Oxygen-free atomic layer deposition of indium sulfide
CN107210187B (zh) * 2014-12-22 2020-08-21 蚌埠玻璃工业设计研究院 用于生产用于具有硫化铟钠缓冲层的薄膜太阳能电池的层系统的方法
KR101671002B1 (ko) 2015-07-24 2016-11-01 청주대학교 산학협력단 태양전지 반사방지막 및 그 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4442824C1 (de) 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
JPH11204810A (ja) * 1998-01-08 1999-07-30 Asahi Chem Ind Co Ltd 化合物半導体太陽電池
DE19956735B4 (de) 1999-11-25 2008-08-21 Shell Erneuerbare Energien Gmbh Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung
FR2820241B1 (fr) 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
HUE052503T2 (hu) 2007-09-12 2021-05-28 Flisom Ag Berendezés kompozit film gyártására
US20090235987A1 (en) * 2008-03-24 2009-09-24 Epv Solar, Inc. Chemical Treatments to Enhance Photovoltaic Performance of CIGS
DE102008024230A1 (de) 2008-05-19 2009-11-26 Avancis Gmbh & Co. Kg Schichtsystem für Solarzellen
JP2011204810A (ja) 2010-03-25 2011-10-13 Sumitomo Bakelite Co Ltd 波長変換部材および光起電装置

Also Published As

Publication number Publication date
JP2015520521A (ja) 2015-07-16
EP2865011B1 (fr) 2019-11-13
US20150295105A1 (en) 2015-10-15
EP2865011A1 (fr) 2015-04-29
JP5985052B2 (ja) 2016-09-06
CN105144401A (zh) 2015-12-09
US9871155B2 (en) 2018-01-16
WO2013189968A1 (fr) 2013-12-27
KR20150013328A (ko) 2015-02-04
CN105144401B (zh) 2018-02-09
ES2772449T3 (es) 2020-07-07
KR101742541B1 (ko) 2017-06-01

Similar Documents

Publication Publication Date Title
GB2506783A (en) Enabling a computing device to utilize another computing device
WO2008089043A3 (fr) Piles solaires à jonction multiple et procédés et appareils pour la formation de celles-ci
IN2014CN03520A (fr)
EP3089229A4 (fr) Film mince d'oxyde métallique, élément électroluminescent organique pourvu d'un film mince, cellule solaire, et cellule solaire organique
EP4235820A3 (fr) Dispositifs photovoltaïques et procédé de fabrication
MX2016002433A (es) Estructura de sustrato y metodo para su preparacion.
WO2015047484A3 (fr) Systèmes électrochimiques et procédés pour récupérer de l'énergie thermique
RS54073B1 (en) STROMAL MATERIAL CELLS
ES2722408T3 (es) Una central de energía eólica, y un método para aumentar la capacidad de potencia reactiva de una central de energía eólica
BR112013016307A2 (pt) adesivo para folha de suporte de bateria solar
WO2016133368A3 (fr) Composé hétérocyclique et cellule solaire organique le comprenant
WO2015064937A3 (fr) Molécule unique et cellule solaire organique la comprenant
EP2939766A4 (fr) Procédé de fabrication de nanoparticules métalliques pour photopile, composition d'encre comprenant des nanoparticules métalliques et procédé de formation de couche mince l'utilisant
MY183477A (en) Passivation of light-receiving surfaces of solar cells with crystalline silicon
MY168109A (en) Downlink resource scheduling
HUE040289T2 (hu) Architektúra és menedzselõ rendszer, valamint berendezés teljesen integrált, dinamikus és önkonfiguráló energiatermelõ, -tároló és -fogyasztó mikrohálózatokhoz
MY174870A (en) Co-crosslinker systems for encapsulation films comprising (meth) acrylamide compounds
WO2013160375A3 (fr) Module solaire photovoltaïque a architecture specifique
EP3091584A4 (fr) Dispositif pour fabriquer une cellule solaire à couche mince intégrée
IN2014DE01279A (fr)
IN2014KN02866A (fr)
EP2610918A4 (fr) Substrat pour cellule solaire, et cellule solaire
EP3057136A4 (fr) Ensemble de feuilles pour encapsulation de cellule solaire et module de cellule solaire
MY178132A (en) Photovoltaic cell having an antireflective coating
EP2849215A4 (fr) Liquide de revêtement pour la formation de semi-conducteur au sulfure, couche mince de semi-conducteur au sulfure, et cellule solaire en couche mince