IN2014DN10062A - - Google Patents
Info
- Publication number
- IN2014DN10062A IN2014DN10062A IN10062DEN2014A IN2014DN10062A IN 2014DN10062 A IN2014DN10062 A IN 2014DN10062A IN 10062DEN2014 A IN10062DEN2014 A IN 10062DEN2014A IN 2014DN10062 A IN2014DN10062 A IN 2014DN10062A
- Authority
- IN
- India
- Prior art keywords
- semiconductor layers
- halide
- producing
- interface
- device including
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 4
- 150000004820 halides Chemical class 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 1
- -1 halide compound Chemical class 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02474—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261649680P | 2012-05-21 | 2012-05-21 | |
PCT/US2013/041836 WO2013177047A1 (en) | 2012-05-21 | 2013-05-20 | Apparatus and method for improving efficiency of thin-film photovoltaic devices |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014DN10062A true IN2014DN10062A (enrdf_load_stackoverflow) | 2015-08-14 |
Family
ID=48577892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN10062DEN2014 IN2014DN10062A (enrdf_load_stackoverflow) | 2012-05-21 | 2013-05-20 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20130327391A1 (enrdf_load_stackoverflow) |
EP (1) | EP2852969A1 (enrdf_load_stackoverflow) |
CN (1) | CN104798184A (enrdf_load_stackoverflow) |
IN (1) | IN2014DN10062A (enrdf_load_stackoverflow) |
WO (1) | WO2013177047A1 (enrdf_load_stackoverflow) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10622497B2 (en) * | 2012-11-15 | 2020-04-14 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Inorganic nanocrystal solar cells |
US9130113B2 (en) | 2012-12-14 | 2015-09-08 | Tsmc Solar Ltd. | Method and apparatus for resistivity and transmittance optimization in TCO solar cell films |
US9105799B2 (en) * | 2013-06-10 | 2015-08-11 | Tsmc Solar Ltd. | Apparatus and method for producing solar cells using light treatment |
CN104425652B (zh) * | 2013-08-30 | 2019-04-05 | 中国建材国际工程集团有限公司 | 用于生产薄膜太阳能电池的方法 |
GB2518881A (en) * | 2013-10-04 | 2015-04-08 | Univ Liverpool | Solar cell manufacturing method |
US10121920B2 (en) | 2015-06-30 | 2018-11-06 | International Business Machines Corporation | Aluminum-doped zinc oxysulfide emitters for enhancing efficiency of chalcogenide solar cell |
CN105552158B (zh) * | 2016-01-08 | 2017-09-29 | 四川大学 | 一种无毒掺杂剂LiCl在碲化镉太阳电池中的应用 |
CN106784111A (zh) * | 2016-12-27 | 2017-05-31 | 成都中建材光电材料有限公司 | 一种碲化镉薄膜太阳能电池的低温制作方法 |
CN109801994B (zh) * | 2019-01-09 | 2020-11-24 | 成都中建材光电材料有限公司 | 一种提升碲化镉电池性能的方法 |
CN119368403A (zh) * | 2024-12-27 | 2025-01-28 | 福莱特玻璃集团股份有限公司 | 一种碲化镉电池的氯化镉热处理方法及其装置系统 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6798023B1 (en) * | 1993-12-02 | 2004-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film |
JPH104205A (ja) * | 1996-06-14 | 1998-01-06 | Matsushita Denchi Kogyo Kk | 化合物半導体太陽電池の製造法 |
CN102939668A (zh) * | 2010-04-21 | 2013-02-20 | 安可太阳能股份有限公司 | 具有电沉积的化合物界面层的太阳能电池的制造方法 |
WO2013074306A1 (en) * | 2011-11-18 | 2013-05-23 | First Solar, Inc. | Method and apparatus providing single step cadmium chloride vapour treatment for photovoltaic modules |
US20140261685A1 (en) * | 2013-03-15 | 2014-09-18 | First Solar, Inc. | Thin film photovoltaic device wtih large grain structure and methods of formation |
-
2013
- 2013-05-20 CN CN201380036017.6A patent/CN104798184A/zh active Pending
- 2013-05-20 EP EP13727722.4A patent/EP2852969A1/en not_active Withdrawn
- 2013-05-20 IN IN10062DEN2014 patent/IN2014DN10062A/en unknown
- 2013-05-20 WO PCT/US2013/041836 patent/WO2013177047A1/en active Application Filing
- 2013-05-21 US US13/899,153 patent/US20130327391A1/en not_active Abandoned
-
2016
- 2016-11-03 US US15/342,533 patent/US20170054052A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2013177047A1 (en) | 2013-11-28 |
US20170054052A1 (en) | 2017-02-23 |
EP2852969A1 (en) | 2015-04-01 |
CN104798184A (zh) | 2015-07-22 |
US20130327391A1 (en) | 2013-12-12 |
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