IN2014DN10062A - - Google Patents

Info

Publication number
IN2014DN10062A
IN2014DN10062A IN10062DEN2014A IN2014DN10062A IN 2014DN10062 A IN2014DN10062 A IN 2014DN10062A IN 10062DEN2014 A IN10062DEN2014 A IN 10062DEN2014A IN 2014DN10062 A IN2014DN10062 A IN 2014DN10062A
Authority
IN
India
Prior art keywords
semiconductor layers
halide
producing
interface
device including
Prior art date
Application number
Other languages
English (en)
Inventor
Akhlesh Gupta
Markus Gloeckler
Rick C Powell
Xilin Peng
Jianjun Wang
Zhibo Zhao
Jigish Trivedi
Original Assignee
First Solar Inc
Akhlesh Gupta
Gloeck Ler Markus
Rick C Powell
Xilin Peng
Jianjun Wang
Zhibo Zhao
Jigish Trivedi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc, Akhlesh Gupta, Gloeck Ler Markus, Rick C Powell, Xilin Peng, Jianjun Wang, Zhibo Zhao, Jigish Trivedi filed Critical First Solar Inc
Publication of IN2014DN10062A publication Critical patent/IN2014DN10062A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/128Annealing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02469Group 12/16 materials
    • H01L21/02474Sulfides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/02562Tellurides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/123Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • H10F77/703Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
IN10062DEN2014 2012-05-21 2013-05-20 IN2014DN10062A (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261649680P 2012-05-21 2012-05-21
PCT/US2013/041836 WO2013177047A1 (en) 2012-05-21 2013-05-20 Apparatus and method for improving efficiency of thin-film photovoltaic devices

Publications (1)

Publication Number Publication Date
IN2014DN10062A true IN2014DN10062A (enrdf_load_stackoverflow) 2015-08-14

Family

ID=48577892

Family Applications (1)

Application Number Title Priority Date Filing Date
IN10062DEN2014 IN2014DN10062A (enrdf_load_stackoverflow) 2012-05-21 2013-05-20

Country Status (5)

Country Link
US (2) US20130327391A1 (enrdf_load_stackoverflow)
EP (1) EP2852969A1 (enrdf_load_stackoverflow)
CN (1) CN104798184A (enrdf_load_stackoverflow)
IN (1) IN2014DN10062A (enrdf_load_stackoverflow)
WO (1) WO2013177047A1 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10622497B2 (en) * 2012-11-15 2020-04-14 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Inorganic nanocrystal solar cells
US9130113B2 (en) 2012-12-14 2015-09-08 Tsmc Solar Ltd. Method and apparatus for resistivity and transmittance optimization in TCO solar cell films
US9105799B2 (en) * 2013-06-10 2015-08-11 Tsmc Solar Ltd. Apparatus and method for producing solar cells using light treatment
CN104425652B (zh) * 2013-08-30 2019-04-05 中国建材国际工程集团有限公司 用于生产薄膜太阳能电池的方法
GB2518881A (en) * 2013-10-04 2015-04-08 Univ Liverpool Solar cell manufacturing method
US10121920B2 (en) 2015-06-30 2018-11-06 International Business Machines Corporation Aluminum-doped zinc oxysulfide emitters for enhancing efficiency of chalcogenide solar cell
CN105552158B (zh) * 2016-01-08 2017-09-29 四川大学 一种无毒掺杂剂LiCl在碲化镉太阳电池中的应用
CN106784111A (zh) * 2016-12-27 2017-05-31 成都中建材光电材料有限公司 一种碲化镉薄膜太阳能电池的低温制作方法
CN109801994B (zh) * 2019-01-09 2020-11-24 成都中建材光电材料有限公司 一种提升碲化镉电池性能的方法
CN119368403A (zh) * 2024-12-27 2025-01-28 福莱特玻璃集团股份有限公司 一种碲化镉电池的氯化镉热处理方法及其装置系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6798023B1 (en) * 1993-12-02 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film
JPH104205A (ja) * 1996-06-14 1998-01-06 Matsushita Denchi Kogyo Kk 化合物半導体太陽電池の製造法
CN102939668A (zh) * 2010-04-21 2013-02-20 安可太阳能股份有限公司 具有电沉积的化合物界面层的太阳能电池的制造方法
WO2013074306A1 (en) * 2011-11-18 2013-05-23 First Solar, Inc. Method and apparatus providing single step cadmium chloride vapour treatment for photovoltaic modules
US20140261685A1 (en) * 2013-03-15 2014-09-18 First Solar, Inc. Thin film photovoltaic device wtih large grain structure and methods of formation

Also Published As

Publication number Publication date
WO2013177047A1 (en) 2013-11-28
US20170054052A1 (en) 2017-02-23
EP2852969A1 (en) 2015-04-01
CN104798184A (zh) 2015-07-22
US20130327391A1 (en) 2013-12-12

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