IN2014CN03499A - - Google Patents

Info

Publication number
IN2014CN03499A
IN2014CN03499A IN3499CHN2014A IN2014CN03499A IN 2014CN03499 A IN2014CN03499 A IN 2014CN03499A IN 3499CHN2014 A IN3499CHN2014 A IN 3499CHN2014A IN 2014CN03499 A IN2014CN03499 A IN 2014CN03499A
Authority
IN
India
Prior art keywords
detector
surface layer
tile
primary substrate
pixels
Prior art date
Application number
Other languages
English (en)
Inventor
Tiemen Poorter
Ronald Dekker
Vincent Adrianus Henneken
Nicolaas Johannes Anthonius Van Veen
Original Assignee
Koninkl Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Nv filed Critical Koninkl Philips Nv
Publication of IN2014CN03499A publication Critical patent/IN2014CN03499A/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/17—Circuit arrangements not adapted to a particular type of detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/243—Modular detectors, e.g. arrays formed from self contained units
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
IN3499CHN2014 2011-11-08 2012-11-06 IN2014CN03499A (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161556870P 2011-11-08 2011-11-08
PCT/IB2012/056176 WO2013068912A1 (en) 2011-11-08 2012-11-06 Seamless tiling to build a large detector

Publications (1)

Publication Number Publication Date
IN2014CN03499A true IN2014CN03499A (enExample) 2015-10-09

Family

ID=47226243

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3499CHN2014 IN2014CN03499A (enExample) 2011-11-08 2012-11-06

Country Status (6)

Country Link
US (1) US9513384B2 (enExample)
EP (1) EP2745142B1 (enExample)
JP (1) JP6100791B2 (enExample)
CN (1) CN103917896B (enExample)
IN (1) IN2014CN03499A (enExample)
WO (1) WO2013068912A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6478538B2 (ja) * 2014-09-10 2019-03-06 キヤノン株式会社 放射線撮像装置および放射線撮像システム
CZ306067B6 (cs) 2015-05-12 2016-07-20 Advacam S.R.O. Modul detektoru ionizujícího záření
CN108780158A (zh) * 2015-09-24 2018-11-09 棱镜传感器公司 模块化的x射线检测器
EP3346296B1 (en) * 2017-01-10 2021-10-27 Oxford Instruments Technologies Oy A semiconductor radiation detector
US20190353805A1 (en) * 2018-05-21 2019-11-21 General Electric Company Digital x-ray detector having polymeric substrate
DE102020213171B4 (de) 2020-10-19 2025-08-28 Siemens Healthineers Ag Röntgendetektormodul und Verfahren zur Bereitstellung eines Röntgendetektormoduls
US11647973B2 (en) * 2021-05-04 2023-05-16 Siemens Medical Solutions Usa, Inc. Three-dimensional tileable gamma ray detector
EP4330730B1 (en) * 2022-07-15 2025-09-17 Shanghai United Imaging Healthcare Co., Ltd. Detector module

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891522A (en) * 1988-10-11 1990-01-02 Microtronics Associates, Inc. Modular multi-element high energy particle detector
US5629524A (en) * 1995-02-21 1997-05-13 Advanced Scientific Concepts, Inc. High speed crystallography detector
US6204087B1 (en) * 1997-02-07 2001-03-20 University Of Hawai'i Fabrication of three-dimensional architecture for solid state radiation detectors
US6853411B2 (en) * 2001-02-20 2005-02-08 Eastman Kodak Company Light-producing high aperture ratio display having aligned tiles
ATE338345T1 (de) * 2002-03-03 2006-09-15 Interon As Aktiverpixelsensormatrix und dessen herstellungsverfahren
CN1230693C (zh) * 2002-11-26 2005-12-07 张亚美 小面积像素电极直接平板x－线探测器
US7170049B2 (en) * 2003-12-30 2007-01-30 Dxray, Inc. Pixelated cadmium zinc telluride based photon counting mode detector
US20050286682A1 (en) * 2004-06-29 2005-12-29 General Electric Company Detector for radiation imaging systems
US20060192087A1 (en) * 2005-02-28 2006-08-31 Real Time Radiography Ltd. Two-dimensional CMOS-based flat panel imaging sensor
JP5070637B2 (ja) * 2005-12-07 2012-11-14 株式会社アクロラド 放射線画像検出モジュール
JP5172267B2 (ja) * 2007-10-09 2013-03-27 富士フイルム株式会社 撮像装置
JP4808760B2 (ja) * 2008-11-19 2011-11-02 浜松ホトニクス株式会社 放射線検出器の製造方法
JP5870375B2 (ja) 2008-11-21 2016-03-01 トリクセル タイル型検出器の組み立て方法
JP2011163868A (ja) 2010-02-08 2011-08-25 Hitachi Cable Ltd 放射線検出モジュール
CN102445703A (zh) * 2010-10-12 2012-05-09 上海生物医学工程研究中心 基于无缝拼接的光电传感探测器及制备方法

Also Published As

Publication number Publication date
EP2745142A1 (en) 2014-06-25
CN103917896B (zh) 2017-08-15
CN103917896A (zh) 2014-07-09
US9513384B2 (en) 2016-12-06
EP2745142B1 (en) 2021-03-17
JP6100791B2 (ja) 2017-03-22
US20140307850A1 (en) 2014-10-16
WO2013068912A1 (en) 2013-05-16
JP2015506117A (ja) 2015-02-26

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