IN2014CN03385A - - Google Patents
Info
- Publication number
- IN2014CN03385A IN2014CN03385A IN3385CHN2014A IN2014CN03385A IN 2014CN03385 A IN2014CN03385 A IN 2014CN03385A IN 3385CHN2014 A IN3385CHN2014 A IN 3385CHN2014A IN 2014CN03385 A IN2014CN03385 A IN 2014CN03385A
- Authority
- IN
- India
- Prior art keywords
- forming
- methods
- fabrication
- enable
- electrochemical capacitor
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 3
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 239000011148 porous material Substances 0.000 abstract 1
- 239000002210 silicon-based material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2011/067434 WO2013100916A1 (en) | 2011-12-27 | 2011-12-27 | Fabrication of porous silicon electrochemical capacitors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014CN03385A true IN2014CN03385A (de) | 2015-07-03 |
Family
ID=48698160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN3385CHN2014 IN2014CN03385A (de) | 2011-12-27 | 2011-12-27 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10170244B2 (de) |
| DE (1) | DE112011106043T5 (de) |
| IN (1) | IN2014CN03385A (de) |
| TW (1) | TWI587330B (de) |
| WO (1) | WO2013100916A1 (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9741881B2 (en) * | 2003-04-14 | 2017-08-22 | S'tile | Photovoltaic module including integrated photovoltaic cells |
| US9409767B2 (en) | 2011-11-03 | 2016-08-09 | Intel Corporation | Energy storage structure, method of manufacturing a support structure for same, and microelectronic assembly and system containing same |
| US10170244B2 (en) | 2011-12-27 | 2019-01-01 | Intel Corporation | Fabrication of porous silicon electrochemical capacitors |
| US9025313B2 (en) | 2012-08-13 | 2015-05-05 | Intel Corporation | Energy storage devices with at least one porous polycrystalline substrate |
| CN105283926B (zh) * | 2013-03-15 | 2019-05-10 | 克林伏特能源有限公司 | 利用有机和有机金属高介电常数材料改进能量存储设备中的电极和电流及其改进方法 |
| US10535466B1 (en) * | 2014-11-05 | 2020-01-14 | United States Of America As Represented By The Secretary Of The Navy | Super dielectric capacitor having electrically and ionically conducting electrodes |
| US10128057B2 (en) | 2015-10-28 | 2018-11-13 | Stmicroelectronics S.R.L. | Supercapacitor with movable separator and method of operating a supercapacitor |
| CN105655139B (zh) * | 2016-01-21 | 2018-05-25 | 东南大学 | 一种氧化钼/碳包覆氮化钛纳米管阵列复合材料及其制备方法和应用 |
| CN105655148B (zh) * | 2016-01-21 | 2018-02-02 | 东南大学 | 一种纳米多孔结构的氮化钛酸锂纳米线/纳米膜一体化材料及其制备方法和应用 |
| CN105719843B (zh) * | 2016-01-21 | 2018-05-04 | 东南大学 | 一种氮化钼/氮化钛纳米管阵列复合材料及其制备方法和应用 |
| DE102016202979A1 (de) * | 2016-02-25 | 2017-08-31 | Robert Bosch Gmbh | Hybridsuperkondensator |
| WO2018152211A1 (en) | 2017-02-14 | 2018-08-23 | Rolls-Royce Corporation | Material property capacitance sensor |
| NO343382B1 (en) | 2017-03-07 | 2019-02-18 | Univ College Of Southeast Norway | On-chip supercapacitor With Silicon nanostructure |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5455430A (en) * | 1991-08-01 | 1995-10-03 | Sanyo Electric Co., Ltd. | Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate |
| US5508542A (en) * | 1994-10-28 | 1996-04-16 | International Business Machines Corporation | Porous silicon trench and capacitor structures |
| DE10242877A1 (de) * | 2002-09-16 | 2004-03-25 | Infineon Technologies Ag | Halbleitersubstrat sowie darin ausgebildete Halbleiterschaltung und zugehörige Herstellungsverfahren |
| IL153289A (en) | 2002-12-05 | 2010-06-16 | Acktar Ltd | Electrodes for electrolytic capacitors and method for producing them |
| US7033703B2 (en) | 2002-12-20 | 2006-04-25 | Firefly Energy, Inc. | Composite material and current collector for battery |
| ATE535002T1 (de) * | 2003-10-10 | 2011-12-15 | Japan Gore Tex Inc | Elektrode für einen elektrischen doppelschichtkondensator, herstellungsverfahren dafür, elektrischer doppelschichtkondensator und leitfähiger klebstoff |
| US8472162B2 (en) | 2005-07-27 | 2013-06-25 | Cellergy Ltd. | Multilayered electrochemical energy storage device and method of manufacture thereof |
| JP4411331B2 (ja) * | 2007-03-19 | 2010-02-10 | 信越化学工業株式会社 | 磁気記録媒体用シリコン基板およびその製造方法 |
| US8526167B2 (en) * | 2009-09-03 | 2013-09-03 | Applied Materials, Inc. | Porous amorphous silicon-carbon nanotube composite based electrodes for battery applications |
| EP2553696A4 (de) | 2010-04-02 | 2016-07-06 | Intel Corp | Ladungsspeichervorrichtung, herstellungsverfahren dafür, verfahren zur herstellung einer elektrisch leitfähigen struktur dafür, mobiles elektronisches gerät damit und mikroelektronisches gerät damit |
| FR2963476B1 (fr) * | 2010-07-30 | 2012-08-24 | Centre Nat Rech Scient | Procede de realisation d'un condensateur comprenant un reseau de nano-capacites |
| US9409767B2 (en) * | 2011-11-03 | 2016-08-09 | Intel Corporation | Energy storage structure, method of manufacturing a support structure for same, and microelectronic assembly and system containing same |
| US10170244B2 (en) | 2011-12-27 | 2019-01-01 | Intel Corporation | Fabrication of porous silicon electrochemical capacitors |
-
2011
- 2011-12-27 US US13/997,881 patent/US10170244B2/en active Active
- 2011-12-27 WO PCT/US2011/067434 patent/WO2013100916A1/en active Application Filing
- 2011-12-27 DE DE112011106043.2T patent/DE112011106043T5/de not_active Withdrawn
- 2011-12-27 IN IN3385CHN2014 patent/IN2014CN03385A/en unknown
-
2012
- 2012-12-24 TW TW101149593A patent/TWI587330B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013100916A1 (en) | 2013-07-04 |
| US20140233152A1 (en) | 2014-08-21 |
| TW201342406A (zh) | 2013-10-16 |
| DE112011106043T5 (de) | 2014-09-18 |
| US10170244B2 (en) | 2019-01-01 |
| TWI587330B (zh) | 2017-06-11 |
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