IN2013CH04797A - - Google Patents

Info

Publication number
IN2013CH04797A
IN2013CH04797A IN4797CH2013A IN2013CH04797A IN 2013CH04797 A IN2013CH04797 A IN 2013CH04797A IN 4797CH2013 A IN4797CH2013 A IN 4797CH2013A IN 2013CH04797 A IN2013CH04797 A IN 2013CH04797A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Thevasahayam Arockiadoss
Original Assignee
Empire Technology Dev Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Empire Technology Dev Llc filed Critical Empire Technology Dev Llc
Priority to IN4797CH2013 priority Critical patent/IN2013CH04797A/en
Priority to US14/522,577 priority patent/US9725332B2/en
Publication of IN2013CH04797A publication Critical patent/IN2013CH04797A/en
Priority to US15/611,886 priority patent/US20170267543A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G39/00—Compounds of molybdenum
    • C01G39/06—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
    • C01B21/0768—After-treatment, e.g. grinding, purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
    • C01G1/12—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/20—Two-dimensional structures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
    • C01P2004/24—Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Secondary Cells (AREA)
  • Battery Electrode And Active Subsutance (AREA)
IN4797CH2013 2013-10-24 2013-10-24 IN2013CH04797A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IN4797CH2013 IN2013CH04797A (zh) 2013-10-24 2013-10-24
US14/522,577 US9725332B2 (en) 2013-10-24 2014-10-23 Transition metal dichalcogenide aerogels and methods of preparation and use
US15/611,886 US20170267543A1 (en) 2013-10-24 2017-06-02 Transition metal dichalcogenide aerogels and methods of preparation and use

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IN4797CH2013 IN2013CH04797A (zh) 2013-10-24 2013-10-24

Publications (1)

Publication Number Publication Date
IN2013CH04797A true IN2013CH04797A (zh) 2015-05-08

Family

ID=52995781

Family Applications (1)

Application Number Title Priority Date Filing Date
IN4797CH2013 IN2013CH04797A (zh) 2013-10-24 2013-10-24

Country Status (2)

Country Link
US (2) US9725332B2 (zh)
IN (1) IN2013CH04797A (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN2013CH04799A (zh) * 2013-10-24 2015-05-08 Empire Technology Dev Llc
GB201517795D0 (en) * 2015-10-08 2015-11-25 Univ Manchester Aerogels
WO2019055287A2 (en) 2017-09-14 2019-03-21 Lawrence Livermore National Security, Llc METAL BOREAL AEROBLES
US20210189165A1 (en) * 2017-10-19 2021-06-24 Hewlett-Packard Development Company, L.P. Printable ammonium-based chalcogenometalate fluids
CN107902700B (zh) * 2017-11-01 2019-08-09 浙江大学 一种二硫化钼气凝胶的制备方法
CN107804874A (zh) * 2017-12-01 2018-03-16 湘潭大学 一种气凝胶状二硫化钼纳米材料的制备方法
WO2019143912A1 (en) * 2018-01-19 2019-07-25 Lawrence Livermore National Security, Llc Products having sheets of 2d materials and related inks for direct ink writing
CN108878636A (zh) * 2018-06-26 2018-11-23 上海电力学院 一种基于二碲化钼制备二维热电器件的方法
WO2020096606A1 (en) * 2018-11-08 2020-05-14 Hewlett-Packard Development Company, L.P. Semiconductor formations
CN109897314B (zh) * 2019-02-20 2021-06-08 南京邮电大学 一种近红外光引发的自愈合聚乙烯醇-二硫化钼复合水凝胶及其制备方法和测试方法
CN110813200B (zh) * 2019-09-12 2022-02-25 清华大学深圳国际研究生院 一种二维层状过渡金属纳米片凝胶的制备方法
WO2021097424A1 (en) * 2019-11-15 2021-05-20 The Johns Hopkins University Substrate directed synthesis of transition-metal dichalcogenide crystals with tunable dimensionality and optical properties
CN114713149B (zh) * 2021-01-05 2022-12-02 中国科学院理化技术研究所 一种三维多孔硫化铜气凝胶及其制备方法和应用
CN113860369A (zh) * 2021-09-24 2021-12-31 西安工业大学 一种制备不同晶型二硫化钼的方法
CN114874755A (zh) * 2022-05-10 2022-08-09 武汉理工大学 一种用于电子元器件热管理的气凝胶基相变复合材料及其制备方法和应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9181486B2 (en) 2006-05-25 2015-11-10 Aspen Aerogels, Inc. Aerogel compositions with enhanced performance
GB0914816D0 (en) 2009-08-25 2009-09-30 Isis Innovation Method of fabrication of aligned nanotube-containing composites
FR2965569B1 (fr) 2010-10-04 2019-06-14 X-Fab France Utilisation d'un procede de deposition par pulverisation cathodique d'une couche de chalcogenure
US8993113B2 (en) 2010-08-06 2015-03-31 Lawrence Livermore National Security, Llc Graphene aerogels
GB2483288A (en) 2010-09-03 2012-03-07 Trinity College Dublin Exfoliation process for forming semiconducting nanoflakes
GB201101482D0 (en) 2011-01-28 2011-03-16 Isis Innovation Exfoiation of lyered material
WO2013116733A1 (en) * 2012-02-03 2013-08-08 The Massachusetts Institute Of Technology Aerogels and methods of making same

Also Published As

Publication number Publication date
US9725332B2 (en) 2017-08-08
US20170267543A1 (en) 2017-09-21
US20150118467A1 (en) 2015-04-30

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