IN187708B - - Google Patents
Info
- Publication number
- IN187708B IN187708B IN824CA1996A IN187708B IN 187708 B IN187708 B IN 187708B IN 824CA1996 A IN824CA1996 A IN 824CA1996A IN 187708 B IN187708 B IN 187708B
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7109585A JPH08306678A (ja) | 1995-05-08 | 1995-05-08 | 半導体装置の製造方法及び半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
IN187708B true IN187708B (tr) | 2002-06-08 |
Family
ID=14514002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN824CA1996 IN187708B (tr) | 1995-05-08 | 1996-05-06 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH08306678A (tr) |
KR (1) | KR19990008315A (tr) |
IN (1) | IN187708B (tr) |
MY (1) | MY132186A (tr) |
TW (1) | TW326099B (tr) |
WO (1) | WO1996036073A1 (tr) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51139263A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Method of selective oxidation of silicon substrate |
JPS5249771A (en) * | 1975-10-17 | 1977-04-21 | Matsushita Electric Ind Co Ltd | Process for production of semiconductor device |
JPS5739551A (en) * | 1980-08-21 | 1982-03-04 | Seiko Epson Corp | Manufacture of selectively oxidized mask |
JPH0628282B2 (ja) * | 1984-09-19 | 1994-04-13 | ソニー株式会社 | 半導体装置の製造方法 |
JP3403210B2 (ja) * | 1992-02-14 | 2003-05-06 | 富士通株式会社 | 半導体装置の製造方法 |
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1995
- 1995-05-08 JP JP7109585A patent/JPH08306678A/ja active Pending
-
1996
- 1996-04-30 TW TW085105149A patent/TW326099B/zh active
- 1996-05-01 WO PCT/JP1996/001193 patent/WO1996036073A1/ja not_active Application Discontinuation
- 1996-05-01 KR KR1019970707841A patent/KR19990008315A/ko active Search and Examination
- 1996-05-06 IN IN824CA1996 patent/IN187708B/en unknown
- 1996-05-06 MY MYPI96001700A patent/MY132186A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JPH08306678A (ja) | 1996-11-22 |
TW326099B (en) | 1998-02-01 |
KR19990008315A (ko) | 1999-01-25 |
WO1996036073A1 (fr) | 1996-11-14 |
MY132186A (en) | 2007-09-28 |