IN171016B - - Google Patents
Info
- Publication number
- IN171016B IN171016B IN703/DEL/87A IN703DE1987A IN171016B IN 171016 B IN171016 B IN 171016B IN 703DE1987 A IN703DE1987 A IN 703DE1987A IN 171016 B IN171016 B IN 171016B
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F210/00—Copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond
- C08F210/02—Ethene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/903,022 US4749640A (en) | 1986-09-02 | 1986-09-02 | Integrated circuit manufacturing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN171016B true IN171016B (da) | 1992-07-04 |
Family
ID=25416802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN703/DEL/87A IN171016B (da) | 1986-09-02 | 1987-08-12 |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US4749640A (da) |
| EP (1) | EP0259985A3 (da) |
| KR (1) | KR880004543A (da) |
| CN (1) | CN1006506B (da) |
| AU (1) | AU587341B2 (da) |
| BR (1) | BR8704508A (da) |
| CA (1) | CA1264870A (da) |
| DK (1) | DK423587A (da) |
| FI (1) | FI873795A (da) |
| IL (1) | IL83547A0 (da) |
| IN (1) | IN171016B (da) |
| MY (1) | MY100556A (da) |
| NO (1) | NO873670L (da) |
| PH (1) | PH24686A (da) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5181985A (en) * | 1988-06-01 | 1993-01-26 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the wet-chemical surface treatment of semiconductor wafers |
| US4900336A (en) * | 1989-04-03 | 1990-02-13 | Arrowhead Industrial Water, Inc. | Method of preferentially removing oxygen from ozonated water |
| US5190627A (en) * | 1989-11-07 | 1993-03-02 | Ebara Corporation | Process for removing dissolved oxygen from water and system therefor |
| JP3152430B2 (ja) * | 1990-10-09 | 2001-04-03 | クロリンエンジニアズ株式会社 | 有機物被膜の除去方法 |
| US5378317A (en) * | 1990-10-09 | 1995-01-03 | Chlorine Engineers Corp., Ltd. | Method for removing organic film |
| EP0555098B1 (en) * | 1992-02-07 | 1999-05-26 | Tadahiro Ohmi | Lithographic developer and lithographic process |
| US6007970A (en) * | 1992-02-07 | 1999-12-28 | Canon Kabushiki Kaisha | Lithographic developer containing surfactant |
| EP0556014B1 (en) * | 1992-02-10 | 1998-10-21 | Tadahiro Ohmi | Lithography process |
| US5565378A (en) * | 1992-02-17 | 1996-10-15 | Mitsubishi Denki Kabushiki Kaisha | Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution |
| KR970008354B1 (ko) * | 1994-01-12 | 1997-05-23 | 엘지반도체 주식회사 | 선택적 식각방법 |
| JP2914555B2 (ja) * | 1994-08-30 | 1999-07-05 | 信越半導体株式会社 | 半導体シリコンウェーハの洗浄方法 |
| DE4432738A1 (de) * | 1994-09-14 | 1996-03-21 | Siemens Ag | Verfahren zum naßchemischen Entfernen von Kontaminationen auf Halbleiterkristalloberflächen |
| US6127279A (en) * | 1994-09-26 | 2000-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Solution applying method |
| US5674357A (en) * | 1995-08-30 | 1997-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor substrate cleaning process |
| KR970023890A (da) * | 1995-10-05 | 1997-05-30 | ||
| US6245155B1 (en) * | 1996-09-06 | 2001-06-12 | Arch Specialty Chemicals, Inc. | Method for removing photoresist and plasma etch residues |
| US5803980A (en) * | 1996-10-04 | 1998-09-08 | Texas Instruments Incorporated | De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue |
| DE19701971C1 (de) * | 1997-01-22 | 1998-11-26 | Invent Gmbh Entwicklung Neuer Technologien | Verfahren und Vorrichtung zur Reinigung von Substratoberflächen |
| US5882425A (en) * | 1997-01-23 | 1999-03-16 | Semitool, Inc. | Composition and method for passivation of a metallization layer of a semiconductor circuit after metallization etching |
| US5971368A (en) | 1997-10-29 | 1999-10-26 | Fsi International, Inc. | System to increase the quantity of dissolved gas in a liquid and to maintain the increased quantity of dissolved gas in the liquid until utilized |
| US6100198A (en) * | 1998-02-27 | 2000-08-08 | Micron Technology, Inc. | Post-planarization, pre-oxide removal ozone treatment |
| US6183637B1 (en) * | 1998-07-23 | 2001-02-06 | Seh America, Inc. | Resin trap device for use in ultrapure water systems and method of purifying water using same |
| US6235641B1 (en) | 1998-10-30 | 2001-05-22 | Fsi International Inc. | Method and system to control the concentration of dissolved gas in a liquid |
| US6406551B1 (en) | 1999-05-14 | 2002-06-18 | Fsi International, Inc. | Method for treating a substrate with heat sensitive agents |
| US6790783B1 (en) * | 1999-05-27 | 2004-09-14 | Micron Technology, Inc. | Semiconductor fabrication apparatus |
| US6408535B1 (en) | 1999-08-26 | 2002-06-25 | Semitool, Inc. | Ozone conversion in semiconductor manufacturing |
| US6805791B2 (en) * | 2000-09-01 | 2004-10-19 | Applied Science And Technology, Inc. | Ozonated water flow and concentration control apparatus |
| US6387804B1 (en) | 2000-09-19 | 2002-05-14 | Advanced Micro Devices, Inc. | Passivation of sidewall spacers using ozonated water |
| TW541584B (en) * | 2001-06-01 | 2003-07-11 | Semiconductor Energy Lab | Semiconductor film, semiconductor device and method for manufacturing same |
| US6812064B2 (en) * | 2001-11-07 | 2004-11-02 | Micron Technology, Inc. | Ozone treatment of a ground semiconductor die to improve adhesive bonding to a substrate |
| US7365403B1 (en) * | 2002-02-13 | 2008-04-29 | Cypress Semiconductor Corp. | Semiconductor topography including a thin oxide-nitride stack and method for making the same |
| US7502114B2 (en) * | 2004-03-12 | 2009-03-10 | Mks Instruments, Inc. | Ozone concentration sensor |
| WO2006017108A2 (en) * | 2004-07-09 | 2006-02-16 | Akrion, Llc | System and method for pre-gate cleaning of substrates |
| JP5251184B2 (ja) * | 2008-03-14 | 2013-07-31 | 栗田工業株式会社 | ガス溶解水供給システム |
| CN101752213B (zh) * | 2008-12-08 | 2011-09-07 | 北京有色金属研究总院 | 一种消除硅片表面水雾的低温热处理工艺 |
| US9627534B1 (en) * | 2015-11-20 | 2017-04-18 | United Microelectronics Corp. | Semiconductor MOS device having a dense oxide film on a spacer |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3066050A (en) * | 1960-03-23 | 1962-11-27 | Philco Corp | Fabrication of semiconductor devices |
| US3705055A (en) * | 1970-09-18 | 1972-12-05 | Western Electric Co | Method of descumming photoresist patterns |
| US3890176A (en) * | 1972-08-18 | 1975-06-17 | Gen Electric | Method for removing photoresist from substrate |
| US4027686A (en) * | 1973-01-02 | 1977-06-07 | Texas Instruments Incorporated | Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water |
| DE2316097A1 (de) * | 1973-03-30 | 1974-10-17 | Siemens Ag | Verfahren zur nachbehandlung von siliziumkoerpern mit geaetzter oxydschicht |
| US4156619A (en) * | 1975-06-11 | 1979-05-29 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for cleaning semi-conductor discs |
| US4341592A (en) * | 1975-08-04 | 1982-07-27 | Texas Instruments Incorporated | Method for removing photoresist layer from substrate by ozone treatment |
| US4129457A (en) * | 1977-05-23 | 1978-12-12 | International Business Machines Corporation | Post-polishing cleaning of semiconductor surfaces |
| DE2928324A1 (de) * | 1979-07-13 | 1981-01-29 | Coolbox Vertriebsgesellschaft | Einrichtung zur messung von ozon in wasser |
| US4318749A (en) * | 1980-06-23 | 1982-03-09 | Rca Corporation | Wettable carrier in gas drying system for wafers |
| JPS5953842A (ja) * | 1982-09-22 | 1984-03-28 | Seiko Epson Corp | 写真処理法 |
| US4443295A (en) * | 1983-06-13 | 1984-04-17 | Fairchild Camera & Instrument Corp. | Method of etching refractory metal film on semiconductor structures utilizing triethylamine and H2 O2 |
| JPS60239028A (ja) * | 1984-05-11 | 1985-11-27 | Nec Corp | 表面清浄化方法 |
| JPS614232A (ja) * | 1984-06-19 | 1986-01-10 | Nec Corp | 半導体基板の洗浄方法 |
| US4595498A (en) * | 1984-12-27 | 1986-06-17 | Thomson Components-Mostek Corporation | Water-polishing loop |
-
1986
- 1986-09-02 US US06/903,022 patent/US4749640A/en not_active Expired - Fee Related
-
1987
- 1987-08-11 CA CA000544260A patent/CA1264870A/en not_active Expired - Fee Related
- 1987-08-12 IN IN703/DEL/87A patent/IN171016B/en unknown
- 1987-08-13 AU AU76833/87A patent/AU587341B2/en not_active Ceased
- 1987-08-13 DK DK423587A patent/DK423587A/da not_active Application Discontinuation
- 1987-08-14 EP EP87307183A patent/EP0259985A3/en not_active Withdrawn
- 1987-08-14 IL IL83547A patent/IL83547A0/xx unknown
- 1987-08-25 PH PH35733A patent/PH24686A/en unknown
- 1987-08-27 KR KR870009395A patent/KR880004543A/ko not_active Application Discontinuation
- 1987-08-28 MY MYPI87001474A patent/MY100556A/en unknown
- 1987-09-01 NO NO873670A patent/NO873670L/no unknown
- 1987-09-01 CN CN87106114A patent/CN1006506B/zh not_active Expired
- 1987-09-01 FI FI873795A patent/FI873795A/fi not_active Application Discontinuation
- 1987-09-01 BR BR8704508A patent/BR8704508A/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| MY100556A (en) | 1990-11-15 |
| FI873795A (fi) | 1988-03-03 |
| AU587341B2 (en) | 1989-08-10 |
| BR8704508A (pt) | 1988-04-19 |
| EP0259985A2 (en) | 1988-03-16 |
| CN1006506B (zh) | 1990-01-17 |
| NO873670L (no) | 1988-03-03 |
| KR880004543A (ko) | 1988-06-04 |
| FI873795A0 (fi) | 1987-09-01 |
| EP0259985A3 (en) | 1990-05-30 |
| CN87106114A (zh) | 1988-05-04 |
| US4749640A (en) | 1988-06-07 |
| DK423587D0 (da) | 1987-08-13 |
| NO873670D0 (no) | 1987-09-01 |
| CA1264870A (en) | 1990-01-23 |
| AU7683387A (en) | 1988-03-10 |
| DK423587A (da) | 1988-03-03 |
| IL83547A0 (en) | 1988-01-31 |
| PH24686A (en) | 1990-09-07 |