IN162406B - - Google Patents

Info

Publication number
IN162406B
IN162406B IN285/CAL/85A IN285CA1985A IN162406B IN 162406 B IN162406 B IN 162406B IN 285CA1985 A IN285CA1985 A IN 285CA1985A IN 162406 B IN162406 B IN 162406B
Authority
IN
India
Prior art keywords
cathode
aperture
light
guided
thyristor
Prior art date
Application number
IN285/CAL/85A
Inventor
Wolfgang Fuehrer
Thomas Mueller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IN162406B publication Critical patent/IN162406B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Thyristors (AREA)
  • Electrophonic Musical Instruments (AREA)
  • Relay Circuits (AREA)
  • Circuit Arrangements For Discharge Lamps (AREA)
  • Power Conversion In General (AREA)
  • Dental Preparations (AREA)
  • Control Of Combustion (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Control Of Electric Motors In General (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

1. Arrangement having a photo-ignitable thyristor which is fixed between two cooling bodies, wherein the disc-shaped semi-conductor body of the thyristor is arranged in a housing which is provided with an anode-side and a cathode-side pressure surface against which the cooling bodies are pressed and in whose wall and optical aperture for a guided light flux is arranged, characterized in that the aperture (1h) in the cathode-side pressure surface (1e) lies directly in the region of the light-sensitive surface of the semi-conductor body (1a) and in that the light is guided in a bore (2b) of the cathode-side cooling body (2) to this aperture (1h).
IN285/CAL/85A 1984-07-05 1985-04-12 IN162406B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3424805 1984-07-05

Publications (1)

Publication Number Publication Date
IN162406B true IN162406B (en) 1988-05-21

Family

ID=6239928

Family Applications (1)

Application Number Title Priority Date Filing Date
IN285/CAL/85A IN162406B (en) 1984-07-05 1985-04-12

Country Status (8)

Country Link
EP (1) EP0167078B1 (en)
JP (1) JPS6129174A (en)
AT (1) ATE37251T1 (en)
BR (1) BR8503191A (en)
DE (1) DE3565026D1 (en)
DK (1) DK305185A (en)
IN (1) IN162406B (en)
MX (1) MX158673A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4905075A (en) * 1986-05-05 1990-02-27 General Electric Company Hermetic semiconductor enclosure
EP0244767A3 (en) * 1986-05-05 1988-08-03 Silicon Power Corporation Hermetic semiconductor enclosure and process of manufacture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207587A (en) * 1977-05-26 1980-06-10 Electric Power Research Institute, Inc. Package for light-triggered thyristor
US4257058A (en) * 1979-07-05 1981-03-17 Electric Power Research Institute, Inc. Package for radiation triggered semiconductor device and method
JPS5949709B2 (en) * 1979-10-13 1984-12-04 三菱電機株式会社 light ignition thyristor device
JPS5788770A (en) * 1980-11-21 1982-06-02 Hitachi Ltd Photo semiconductor device

Also Published As

Publication number Publication date
DK305185A (en) 1986-01-06
JPS6129174A (en) 1986-02-10
DK305185D0 (en) 1985-07-04
BR8503191A (en) 1986-03-25
ATE37251T1 (en) 1988-09-15
MX158673A (en) 1989-02-24
DE3565026D1 (en) 1988-10-20
EP0167078A1 (en) 1986-01-08
EP0167078B1 (en) 1988-09-14

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