IN153170B - - Google Patents

Info

Publication number
IN153170B
IN153170B IN246/CAL/81A IN246CA1981A IN153170B IN 153170 B IN153170 B IN 153170B IN 246CA1981 A IN246CA1981 A IN 246CA1981A IN 153170 B IN153170 B IN 153170B
Authority
IN
India
Application number
IN246/CAL/81A
Other languages
English (en)
Inventor
Philip Leland Hower
Richard Joseph Fiedor
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IN153170B publication Critical patent/IN153170B/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
IN246/CAL/81A 1980-07-24 1981-03-07 IN153170B (enrdf_load_html_response)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17178780A 1980-07-24 1980-07-24

Publications (1)

Publication Number Publication Date
IN153170B true IN153170B (enrdf_load_html_response) 1984-06-09

Family

ID=22625139

Family Applications (1)

Application Number Title Priority Date Filing Date
IN246/CAL/81A IN153170B (enrdf_load_html_response) 1980-07-24 1981-03-07

Country Status (7)

Country Link
JP (1) JPS5753978A (enrdf_load_html_response)
BR (1) BR8101653A (enrdf_load_html_response)
CA (1) CA1165467A (enrdf_load_html_response)
DE (1) DE3111598A1 (enrdf_load_html_response)
FR (1) FR2487575A1 (enrdf_load_html_response)
GB (1) GB2081009A (enrdf_load_html_response)
IN (1) IN153170B (enrdf_load_html_response)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH670332A5 (enrdf_load_html_response) * 1986-09-17 1989-05-31 Bbc Brown Boveri & Cie
DE59003052D1 (de) * 1989-05-18 1993-11-18 Asea Brown Boveri Halbleiterbauelement.
GB0318146D0 (en) * 2003-08-02 2003-09-03 Zetex Plc Bipolar transistor with a low saturation voltage

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US4075037A (en) * 1976-05-17 1978-02-21 Westinghouse Electric Corporation Tailoring of recovery charge in power diodes and thyristors by irradiation

Also Published As

Publication number Publication date
GB2081009A (en) 1982-02-10
CA1165467A (en) 1984-04-10
BR8101653A (pt) 1982-08-17
JPS5753978A (enrdf_load_html_response) 1982-03-31
FR2487575B1 (enrdf_load_html_response) 1984-06-15
FR2487575A1 (fr) 1982-01-29
DE3111598A1 (de) 1982-03-11

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