GB2081009A - Electron irradiation of power transistors - Google Patents
Electron irradiation of power transistors Download PDFInfo
- Publication number
- GB2081009A GB2081009A GB8109087A GB8109087A GB2081009A GB 2081009 A GB2081009 A GB 2081009A GB 8109087 A GB8109087 A GB 8109087A GB 8109087 A GB8109087 A GB 8109087A GB 2081009 A GB2081009 A GB 2081009A
- Authority
- GB
- United Kingdom
- Prior art keywords
- lifetime
- transistors
- radiation
- electron
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17178780A | 1980-07-24 | 1980-07-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB2081009A true GB2081009A (en) | 1982-02-10 |
Family
ID=22625139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8109087A Withdrawn GB2081009A (en) | 1980-07-24 | 1981-03-24 | Electron irradiation of power transistors |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5753978A (enrdf_load_html_response) |
BR (1) | BR8101653A (enrdf_load_html_response) |
CA (1) | CA1165467A (enrdf_load_html_response) |
DE (1) | DE3111598A1 (enrdf_load_html_response) |
FR (1) | FR2487575A1 (enrdf_load_html_response) |
GB (1) | GB2081009A (enrdf_load_html_response) |
IN (1) | IN153170B (enrdf_load_html_response) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4806497A (en) * | 1986-09-17 | 1989-02-21 | Bbc Brown Boveri Ag | Method for producing large-area power semiconductor components |
US5151766A (en) * | 1989-05-18 | 1992-09-29 | Asea Brown Boveri Ltd. | Semiconductor component |
WO2005015641A1 (en) * | 2003-08-02 | 2005-02-17 | Zetex Plc | Biopolar transistor with a low saturation voltage |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3933527A (en) * | 1973-03-09 | 1976-01-20 | Westinghouse Electric Corporation | Fine tuning power diodes with irradiation |
US4075037A (en) * | 1976-05-17 | 1978-02-21 | Westinghouse Electric Corporation | Tailoring of recovery charge in power diodes and thyristors by irradiation |
-
1981
- 1981-03-07 IN IN246/CAL/81A patent/IN153170B/en unknown
- 1981-03-09 CA CA000372536A patent/CA1165467A/en not_active Expired
- 1981-03-20 BR BR8101653A patent/BR8101653A/pt unknown
- 1981-03-24 GB GB8109087A patent/GB2081009A/en not_active Withdrawn
- 1981-03-24 DE DE19813111598 patent/DE3111598A1/de not_active Withdrawn
- 1981-06-23 FR FR8112337A patent/FR2487575A1/fr active Granted
- 1981-07-21 JP JP56113069A patent/JPS5753978A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4806497A (en) * | 1986-09-17 | 1989-02-21 | Bbc Brown Boveri Ag | Method for producing large-area power semiconductor components |
US5151766A (en) * | 1989-05-18 | 1992-09-29 | Asea Brown Boveri Ltd. | Semiconductor component |
WO2005015641A1 (en) * | 2003-08-02 | 2005-02-17 | Zetex Plc | Biopolar transistor with a low saturation voltage |
US7923751B2 (en) | 2003-08-02 | 2011-04-12 | Zetex Plc | Bipolar transistor with a low saturation voltage |
Also Published As
Publication number | Publication date |
---|---|
CA1165467A (en) | 1984-04-10 |
BR8101653A (pt) | 1982-08-17 |
JPS5753978A (enrdf_load_html_response) | 1982-03-31 |
IN153170B (enrdf_load_html_response) | 1984-06-09 |
FR2487575B1 (enrdf_load_html_response) | 1984-06-15 |
FR2487575A1 (fr) | 1982-01-29 |
DE3111598A1 (de) | 1982-03-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |