CA1165467A - Electron irradiation of high level transistors - Google Patents

Electron irradiation of high level transistors

Info

Publication number
CA1165467A
CA1165467A CA000372536A CA372536A CA1165467A CA 1165467 A CA1165467 A CA 1165467A CA 000372536 A CA000372536 A CA 000372536A CA 372536 A CA372536 A CA 372536A CA 1165467 A CA1165467 A CA 1165467A
Authority
CA
Canada
Prior art keywords
radiation
transistor
predetermined
lifetime
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000372536A
Other languages
English (en)
French (fr)
Inventor
Philip L. Hower
Richard J. Fiedor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA1165467A publication Critical patent/CA1165467A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
CA000372536A 1980-07-24 1981-03-09 Electron irradiation of high level transistors Expired CA1165467A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17178780A 1980-07-24 1980-07-24
US171,787 1980-07-24

Publications (1)

Publication Number Publication Date
CA1165467A true CA1165467A (en) 1984-04-10

Family

ID=22625139

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000372536A Expired CA1165467A (en) 1980-07-24 1981-03-09 Electron irradiation of high level transistors

Country Status (7)

Country Link
JP (1) JPS5753978A (enrdf_load_html_response)
BR (1) BR8101653A (enrdf_load_html_response)
CA (1) CA1165467A (enrdf_load_html_response)
DE (1) DE3111598A1 (enrdf_load_html_response)
FR (1) FR2487575A1 (enrdf_load_html_response)
GB (1) GB2081009A (enrdf_load_html_response)
IN (1) IN153170B (enrdf_load_html_response)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH670332A5 (enrdf_load_html_response) * 1986-09-17 1989-05-31 Bbc Brown Boveri & Cie
EP0398120B1 (de) * 1989-05-18 1993-10-13 Asea Brown Boveri Ag Halbleiterbauelement
GB0318146D0 (en) 2003-08-02 2003-09-03 Zetex Plc Bipolar transistor with a low saturation voltage

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US4075037A (en) * 1976-05-17 1978-02-21 Westinghouse Electric Corporation Tailoring of recovery charge in power diodes and thyristors by irradiation

Also Published As

Publication number Publication date
FR2487575A1 (fr) 1982-01-29
IN153170B (enrdf_load_html_response) 1984-06-09
FR2487575B1 (enrdf_load_html_response) 1984-06-15
BR8101653A (pt) 1982-08-17
GB2081009A (en) 1982-02-10
JPS5753978A (enrdf_load_html_response) 1982-03-31
DE3111598A1 (de) 1982-03-11

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Legal Events

Date Code Title Description
MKEX Expiry