IN152332B - - Google Patents

Info

Publication number
IN152332B
IN152332B IN746/CAL/79A IN746CA1979A IN152332B IN 152332 B IN152332 B IN 152332B IN 746CA1979 A IN746CA1979 A IN 746CA1979A IN 152332 B IN152332 B IN 152332B
Authority
IN
India
Application number
IN746/CAL/79A
Other languages
English (en)
Inventor
Lewis Roy Lowry Jr
Paul George Mamullin
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/930,762 external-priority patent/US4301462A/en
Priority claimed from US05/932,992 external-priority patent/US4186409A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IN152332B publication Critical patent/IN152332B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Couplings Of Light Guides (AREA)
IN746/CAL/79A 1978-08-03 1979-07-20 IN152332B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/930,762 US4301462A (en) 1978-08-03 1978-08-03 Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber
US05/932,992 US4186409A (en) 1978-08-11 1978-08-11 Light activated silicon switch

Publications (1)

Publication Number Publication Date
IN152332B true IN152332B (de) 1983-12-24

Family

ID=27129997

Family Applications (1)

Application Number Title Priority Date Filing Date
IN746/CAL/79A IN152332B (de) 1978-08-03 1979-07-20

Country Status (5)

Country Link
BR (1) BR7904830A (de)
DE (1) DE2931649A1 (de)
FR (1) FR2432771A1 (de)
GB (1) GB2027991B (de)
IN (1) IN152332B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5897864A (ja) * 1981-12-07 1983-06-10 Mitsubishi Electric Corp 光トリガサイリスタ
GB2127220B (en) * 1982-08-31 1986-04-23 Tokyo Shibaura Electric Co Light-triggered semiconductor device and light guide thereto
DE4300765C1 (de) * 1993-01-14 1993-12-23 Bosch Gmbh Robert Verfahren zum Planarisieren grabenförmiger Strukturen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE339717B (de) * 1968-04-26 1971-10-18 Asea Ab
DE2320459A1 (de) * 1972-04-28 1973-11-15 Westinghouse Electric Corp Auf strahlung ansprechende anordnung mit einem durch licht aktivierten schaltelement
FR2226754B1 (de) * 1973-04-20 1975-08-22 Thomson Csf
FR2253277B1 (de) * 1973-11-30 1977-08-12 Silec Semi Conducteurs
JPS583386B2 (ja) * 1975-10-11 1983-01-21 株式会社日立製作所 ソウホウコウセイホトサイリスタ
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
FR2426271A1 (fr) * 1978-05-18 1979-12-14 Thomson Csf Procede d'assemblage precis de " lasers " a semi-conducteur et de fibres optiques

Also Published As

Publication number Publication date
FR2432771A1 (fr) 1980-02-29
GB2027991B (en) 1983-04-27
GB2027991A (en) 1980-02-27
DE2931649A1 (de) 1980-02-21
FR2432771B1 (de) 1985-04-12
BR7904830A (pt) 1980-04-29
DE2931649C2 (de) 1991-02-14

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