IN152079B - - Google Patents

Info

Publication number
IN152079B
IN152079B IN1446/CAL/80A IN1446CA1980A IN152079B IN 152079 B IN152079 B IN 152079B IN 1446CA1980 A IN1446CA1980 A IN 1446CA1980A IN 152079 B IN152079 B IN 152079B
Authority
IN
India
Application number
IN1446/CAL/80A
Other languages
English (en)
Inventor
Krishan Sukhraj Tarneji
John Bartko
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IN152079B publication Critical patent/IN152079B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
IN1446/CAL/80A 1980-01-09 1980-12-30 IN152079B (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11052680A 1980-01-09 1980-01-09

Publications (1)

Publication Number Publication Date
IN152079B true IN152079B (ja) 1983-10-08

Family

ID=22333515

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1446/CAL/80A IN152079B (ja) 1980-01-09 1980-12-30

Country Status (4)

Country Link
EP (1) EP0032386A3 (ja)
JP (1) JPS56101776A (ja)
BR (1) BR8100075A (ja)
IN (1) IN152079B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1209889A (en) * 1981-09-18 1986-08-19 Litai Weng Homogeneous assay on a non-porous surface
JPS5950531A (ja) * 1982-09-16 1984-03-23 Toshiba Corp 半導体装置及びその製造方法
CH670332A5 (ja) * 1986-09-17 1989-05-31 Bbc Brown Boveri & Cie
US5284780A (en) * 1989-09-28 1994-02-08 Siemens Aktiengesellschaft Method for increasing the electric strength of a multi-layer semiconductor component
JP3488599B2 (ja) * 1996-10-17 2004-01-19 株式会社東芝 半導体装置
DE19726126A1 (de) * 1997-06-20 1998-12-24 Telefunken Microelectron Bipolarer Schalttransistor mit verringerter Sättigung
CN113668064B (zh) * 2021-07-29 2022-12-23 山西烁科晶体有限公司 一种优化碳化硅晶片电阻率的辐照方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1334520A (en) * 1970-06-12 1973-10-17 Atomic Energy Authority Uk Formation of electrically insulating layers in semiconducting materials
US4056408A (en) * 1976-03-17 1977-11-01 Westinghouse Electric Corporation Reducing the switching time of semiconductor devices by nuclear irradiation
US4075037A (en) * 1976-05-17 1978-02-21 Westinghouse Electric Corporation Tailoring of recovery charge in power diodes and thyristors by irradiation

Also Published As

Publication number Publication date
EP0032386A2 (en) 1981-07-22
BR8100075A (pt) 1981-07-21
JPS56101776A (en) 1981-08-14
EP0032386A3 (en) 1985-05-22

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