IN140574B - - Google Patents
Info
- Publication number
- IN140574B IN140574B IN1997/CAL/74A IN1997CA1974A IN140574B IN 140574 B IN140574 B IN 140574B IN 1997CA1974 A IN1997CA1974 A IN 1997CA1974A IN 140574 B IN140574 B IN 140574B
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/003—Anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/015—Capping layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US410548A US3880676A (en) | 1973-10-29 | 1973-10-29 | Method of making a semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN140574B true IN140574B (de) | 1976-12-04 |
Family
ID=23625209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN1997/CAL/74A IN140574B (de) | 1973-10-29 | 1974-09-05 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3880676A (de) |
| JP (1) | JPS50113169A (de) |
| BE (1) | BE821565A (de) |
| BR (1) | BR7408804D0 (de) |
| DE (1) | DE2450070A1 (de) |
| FR (1) | FR2249442A1 (de) |
| GB (1) | GB1446268A (de) |
| IN (1) | IN140574B (de) |
| IT (1) | IT1021262B (de) |
| NL (1) | NL7413791A (de) |
| SE (1) | SE401965B (de) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4033788A (en) * | 1973-12-10 | 1977-07-05 | Hughes Aircraft Company | Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates |
| JPS5210673A (en) * | 1975-07-15 | 1977-01-27 | Matsushita Electronics Corp | Manufacturing method of silicon semi-conductor device |
| US4055444A (en) * | 1976-01-12 | 1977-10-25 | Texas Instruments Incorporated | Method of making N-channel MOS integrated circuits |
| US4058413A (en) * | 1976-05-13 | 1977-11-15 | The United States Of America As Represented By The Secretary Of The Air Force | Ion implantation method for the fabrication of gallium arsenide semiconductor devices utilizing an aluminum nitride protective capping layer |
| US4881111A (en) * | 1977-02-24 | 1989-11-14 | Harris Corporation | Radiation hard, high emitter-base breakdown bipolar transistor |
| DE2733146C2 (de) * | 1977-07-22 | 1984-11-08 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Implantationsverfahren und dessen Verwendung zum Herstellen eines Transistors |
| DE2755418A1 (de) * | 1977-12-13 | 1979-06-21 | Bosch Gmbh Robert | Verfahren zur herstellung eines halbleiter-bauelements |
| DE2921793A1 (de) * | 1979-05-29 | 1980-12-04 | Fujitsu Ltd | Verfahren zum herstellen einer halbleitervorrichtung mit ionenimplantation |
| WO1981001911A1 (en) * | 1979-12-28 | 1981-07-09 | Ibm | Method for achieving ideal impurity base profile in a transistor |
| DE3021215A1 (de) * | 1980-06-04 | 1981-12-10 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur stabilisierung der stromverstaerkung von npn-siliciumtransistoren |
| US4263066A (en) * | 1980-06-09 | 1981-04-21 | Varian Associates, Inc. | Process for concurrent formation of base diffusion and p+ profile from single source predeposition |
| EP0067507A3 (de) * | 1981-05-19 | 1983-05-04 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Schirme für Kathodenstrahlröhren |
| JPS60116160A (ja) * | 1983-11-29 | 1985-06-22 | Sony Corp | 半導体装置の製造方法 |
| USRE35642E (en) * | 1987-12-22 | 1997-10-28 | Sgs-Thomson Microelectronics, S.R.L. | Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process |
| IT1217323B (it) * | 1987-12-22 | 1990-03-22 | Sgs Microelettronica Spa | Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione |
| CN104465372B (zh) * | 2014-12-24 | 2017-03-29 | 上海华虹宏力半导体制造有限公司 | 双极型三极管的制造方法及结构 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1053406A (de) * | 1963-05-18 | |||
| US3279963A (en) * | 1963-07-23 | 1966-10-18 | Ibm | Fabrication of semiconductor devices |
| GB1102164A (en) * | 1964-04-15 | 1968-02-07 | Texas Instruments Inc | Selective impurity diffusion |
| DE1544273A1 (de) * | 1965-12-13 | 1969-09-04 | Siemens Ag | Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall |
| FR2014382B1 (de) * | 1968-06-28 | 1974-03-15 | Motorola Inc | |
| US3638300A (en) * | 1970-05-21 | 1972-02-01 | Bell Telephone Labor Inc | Forming impurity regions in semiconductors |
| US3756861A (en) * | 1972-03-13 | 1973-09-04 | Bell Telephone Labor Inc | Bipolar transistors and method of manufacture |
-
1973
- 1973-10-29 US US410548A patent/US3880676A/en not_active Expired - Lifetime
-
1974
- 1974-09-05 IN IN1997/CAL/74A patent/IN140574B/en unknown
- 1974-09-10 IT IT27149/74A patent/IT1021262B/it active
- 1974-10-21 FR FR7435300A patent/FR2249442A1/fr not_active Withdrawn
- 1974-10-22 DE DE19742450070 patent/DE2450070A1/de active Pending
- 1974-10-22 GB GB4562274A patent/GB1446268A/en not_active Expired
- 1974-10-22 NL NL7413791A patent/NL7413791A/xx not_active Application Discontinuation
- 1974-10-23 BR BR8804/74A patent/BR7408804D0/pt unknown
- 1974-10-24 JP JP49123258A patent/JPS50113169A/ja active Pending
- 1974-10-25 SE SE7413466A patent/SE401965B/xx unknown
- 1974-10-28 BE BE149954A patent/BE821565A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE401965B (sv) | 1978-06-05 |
| DE2450070A1 (de) | 1975-04-30 |
| SE7413466L (de) | 1975-04-30 |
| IT1021262B (it) | 1978-01-30 |
| GB1446268A (en) | 1976-08-18 |
| BE821565A (fr) | 1975-02-17 |
| FR2249442A1 (de) | 1975-05-23 |
| NL7413791A (nl) | 1975-05-02 |
| US3880676A (en) | 1975-04-29 |
| JPS50113169A (de) | 1975-09-05 |
| BR7408804D0 (pt) | 1975-08-26 |