SE401965B - Forfarande for att tillverka en halvledaranordning, i vilken dopningsatomer jonimplanteras in i ett halvledarmaterial igenom en del av dess yta - Google Patents

Forfarande for att tillverka en halvledaranordning, i vilken dopningsatomer jonimplanteras in i ett halvledarmaterial igenom en del av dess yta

Info

Publication number
SE401965B
SE401965B SE7413466A SE7413466A SE401965B SE 401965 B SE401965 B SE 401965B SE 7413466 A SE7413466 A SE 7413466A SE 7413466 A SE7413466 A SE 7413466A SE 401965 B SE401965 B SE 401965B
Authority
SE
Sweden
Prior art keywords
atomes
doping
implanted
procedure
manufacturing
Prior art date
Application number
SE7413466A
Other languages
English (en)
Other versions
SE7413466L (sv
Inventor
E C Douglas
C P Wu
C W Mueller
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7413466L publication Critical patent/SE7413466L/xx
Publication of SE401965B publication Critical patent/SE401965B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/015—Capping layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
SE7413466A 1973-10-29 1974-10-25 Forfarande for att tillverka en halvledaranordning, i vilken dopningsatomer jonimplanteras in i ett halvledarmaterial igenom en del av dess yta SE401965B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US410548A US3880676A (en) 1973-10-29 1973-10-29 Method of making a semiconductor device

Publications (2)

Publication Number Publication Date
SE7413466L SE7413466L (sv) 1975-04-30
SE401965B true SE401965B (sv) 1978-06-05

Family

ID=23625209

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7413466A SE401965B (sv) 1973-10-29 1974-10-25 Forfarande for att tillverka en halvledaranordning, i vilken dopningsatomer jonimplanteras in i ett halvledarmaterial igenom en del av dess yta

Country Status (11)

Country Link
US (1) US3880676A (sv)
JP (1) JPS50113169A (sv)
BE (1) BE821565A (sv)
BR (1) BR7408804D0 (sv)
DE (1) DE2450070A1 (sv)
FR (1) FR2249442A1 (sv)
GB (1) GB1446268A (sv)
IN (1) IN140574B (sv)
IT (1) IT1021262B (sv)
NL (1) NL7413791A (sv)
SE (1) SE401965B (sv)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4033788A (en) * 1973-12-10 1977-07-05 Hughes Aircraft Company Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
JPS5210673A (en) * 1975-07-15 1977-01-27 Matsushita Electronics Corp Manufacturing method of silicon semi-conductor device
US4055444A (en) * 1976-01-12 1977-10-25 Texas Instruments Incorporated Method of making N-channel MOS integrated circuits
US4058413A (en) * 1976-05-13 1977-11-15 The United States Of America As Represented By The Secretary Of The Air Force Ion implantation method for the fabrication of gallium arsenide semiconductor devices utilizing an aluminum nitride protective capping layer
US4881111A (en) * 1977-02-24 1989-11-14 Harris Corporation Radiation hard, high emitter-base breakdown bipolar transistor
DE2733146C2 (de) * 1977-07-22 1984-11-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Implantationsverfahren und dessen Verwendung zum Herstellen eines Transistors
DE2755418A1 (de) * 1977-12-13 1979-06-21 Bosch Gmbh Robert Verfahren zur herstellung eines halbleiter-bauelements
DE2921793A1 (de) * 1979-05-29 1980-12-04 Fujitsu Ltd Verfahren zum herstellen einer halbleitervorrichtung mit ionenimplantation
EP0042380B1 (en) * 1979-12-28 1986-03-19 International Business Machines Corporation Method for achieving ideal impurity base profile in a transistor
DE3021215A1 (de) * 1980-06-04 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zur stabilisierung der stromverstaerkung von npn-siliciumtransistoren
US4263066A (en) * 1980-06-09 1981-04-21 Varian Associates, Inc. Process for concurrent formation of base diffusion and p+ profile from single source predeposition
EP0067507A3 (en) * 1981-05-19 1983-05-04 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Cathode ray tube screens
JPS60116160A (ja) * 1983-11-29 1985-06-22 Sony Corp 半導体装置の製造方法
USRE35642E (en) * 1987-12-22 1997-10-28 Sgs-Thomson Microelectronics, S.R.L. Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
CN104465372B (zh) * 2014-12-24 2017-03-29 上海华虹宏力半导体制造有限公司 双极型三极管的制造方法及结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053406A (sv) * 1963-05-18
US3279963A (en) * 1963-07-23 1966-10-18 Ibm Fabrication of semiconductor devices
GB1102164A (en) * 1964-04-15 1968-02-07 Texas Instruments Inc Selective impurity diffusion
DE1544273A1 (de) * 1965-12-13 1969-09-04 Siemens Ag Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall
FR2014382B1 (sv) * 1968-06-28 1974-03-15 Motorola Inc
US3638300A (en) * 1970-05-21 1972-02-01 Bell Telephone Labor Inc Forming impurity regions in semiconductors
US3756861A (en) * 1972-03-13 1973-09-04 Bell Telephone Labor Inc Bipolar transistors and method of manufacture

Also Published As

Publication number Publication date
IN140574B (sv) 1976-12-04
GB1446268A (en) 1976-08-18
FR2249442A1 (sv) 1975-05-23
US3880676A (en) 1975-04-29
BR7408804D0 (pt) 1975-08-26
BE821565A (fr) 1975-02-17
IT1021262B (it) 1978-01-30
NL7413791A (nl) 1975-05-02
SE7413466L (sv) 1975-04-30
DE2450070A1 (de) 1975-04-30
JPS50113169A (sv) 1975-09-05

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