IL99855A0 - Miniband transport quantum well infrared detector and method for detecting thermal radiation - Google Patents

Miniband transport quantum well infrared detector and method for detecting thermal radiation

Info

Publication number
IL99855A0
IL99855A0 IL99855A IL9985591A IL99855A0 IL 99855 A0 IL99855 A0 IL 99855A0 IL 99855 A IL99855 A IL 99855A IL 9985591 A IL9985591 A IL 9985591A IL 99855 A0 IL99855 A0 IL 99855A0
Authority
IL
Israel
Prior art keywords
quantum well
infrared detector
thermal radiation
detecting thermal
well infrared
Prior art date
Application number
IL99855A
Other languages
English (en)
Original Assignee
Martin Marietta Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Martin Marietta Corp filed Critical Martin Marietta Corp
Publication of IL99855A0 publication Critical patent/IL99855A0/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
IL99855A 1990-10-31 1991-10-25 Miniband transport quantum well infrared detector and method for detecting thermal radiation IL99855A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60628590A 1990-10-31 1990-10-31

Publications (1)

Publication Number Publication Date
IL99855A0 true IL99855A0 (en) 1992-08-18

Family

ID=24427344

Family Applications (1)

Application Number Title Priority Date Filing Date
IL99855A IL99855A0 (en) 1990-10-31 1991-10-25 Miniband transport quantum well infrared detector and method for detecting thermal radiation

Country Status (6)

Country Link
EP (1) EP0555402A1 (ja)
JP (1) JPH06502743A (ja)
AU (1) AU9030791A (ja)
CA (1) CA2091053A1 (ja)
IL (1) IL99855A0 (ja)
WO (1) WO1992008250A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL106130A (en) * 1992-06-30 1996-10-19 Martin Marietta Corp Detector with minimal stripe transport of quantum sources and a method for detecting electromagnetic radiation
US5477060A (en) * 1993-06-25 1995-12-19 The United States Of America As Represented By The Secretary Of The Army Infrared hot electron transistor with a superlattice base
FR2729789B1 (fr) * 1993-09-10 1998-03-20 Thomson Csf Detecteur a puits quantique et procede de realisation
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
US5539206A (en) * 1995-04-20 1996-07-23 Loral Vought Systems Corporation Enhanced quantum well infrared photodetector
SG68636A1 (en) * 1997-09-27 1999-11-16 Univ Singapore Dual band infrared detector using step multiquantum wells with superlattice barriers
US6054718A (en) * 1998-03-31 2000-04-25 Lockheed Martin Corporation Quantum well infrared photocathode having negative electron affinity surface
JP5282361B2 (ja) * 2007-02-19 2013-09-04 富士通株式会社 量子井戸型光検知器及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0821748B2 (ja) * 1985-09-04 1996-03-04 株式会社日立製作所 半導体レ−ザ装置
US4894526A (en) * 1987-01-15 1990-01-16 American Telephone And Telegraph Company, At&T Bell Laboratories Infrared-radiation detector device
US5047822A (en) * 1988-03-24 1991-09-10 Martin Marietta Corporation Electro-optic quantum well device
CA1314614C (en) * 1988-06-06 1993-03-16 Clyde George Bethea Quantum-well radiation detector
EP0380939B1 (en) * 1989-01-31 1995-12-06 International Business Machines Corporation Resonant tunneling photodetector for long wavelength applications

Also Published As

Publication number Publication date
EP0555402A1 (en) 1993-08-18
JPH06502743A (ja) 1994-03-24
AU9030791A (en) 1992-05-26
WO1992008250A1 (en) 1992-05-14
CA2091053A1 (en) 1992-05-01

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