IL95208A - זכרון נייח דו-בבי בעל מחזור תפעול קרא-שנה-כתוב יחיד - Google Patents

זכרון נייח דו-בבי בעל מחזור תפעול קרא-שנה-כתוב יחיד

Info

Publication number
IL95208A
IL95208A IL9520890A IL9520890A IL95208A IL 95208 A IL95208 A IL 95208A IL 9520890 A IL9520890 A IL 9520890A IL 9520890 A IL9520890 A IL 9520890A IL 95208 A IL95208 A IL 95208A
Authority
IL
Israel
Prior art keywords
word line
memory cell
data
coupled
signal
Prior art date
Application number
IL9520890A
Other languages
English (en)
Other versions
IL95208A0 (en
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of IL95208A0 publication Critical patent/IL95208A0/xx
Publication of IL95208A publication Critical patent/IL95208A/he

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
IL9520890A 1989-12-29 1990-07-27 זכרון נייח דו-בבי בעל מחזור תפעול קרא-שנה-כתוב יחיד IL95208A (he)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45898589A 1989-12-29 1989-12-29

Publications (2)

Publication Number Publication Date
IL95208A0 IL95208A0 (en) 1991-06-10
IL95208A true IL95208A (he) 1994-11-11

Family

ID=23822913

Family Applications (1)

Application Number Title Priority Date Filing Date
IL9520890A IL95208A (he) 1989-12-29 1990-07-27 זכרון נייח דו-בבי בעל מחזור תפעול קרא-שנה-כתוב יחיד

Country Status (5)

Country Link
JP (1) JP3000297B2 (he)
DE (1) DE4041940A1 (he)
FR (1) FR2656728A1 (he)
GB (1) GB2239541B (he)
IL (1) IL95208A (he)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6798712B2 (en) * 2002-07-02 2004-09-28 Advanced Micro Devices, Inc. Wordline latching in semiconductor memories
GB2420015A (en) * 2003-07-02 2006-05-10 Advanced Micro Devices Inc Method Of Manufacturing Multi-Level Contacts By Sizing Of Contact Sizes In Intergrated Circuits

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760586A (en) * 1980-09-26 1982-04-12 Matsushita Electric Ind Co Ltd Random access memory
US4599708A (en) * 1983-12-30 1986-07-08 International Business Machines Corporation Method and structure for machine data storage with simultaneous write and read
DE3786539T2 (de) * 1986-12-19 1993-10-28 Fujitsu Ltd Halbleiterspeicher mit Doppelzugriffseinrichtung zur Realisierung eines Lesebetriebs mit hoher Geschwindigkeit.
US4802122A (en) * 1987-04-28 1989-01-31 Advanced Micro Devices, Inc. Fast flush for a first-in first-out memory

Also Published As

Publication number Publication date
JP3000297B2 (ja) 2000-01-17
DE4041940A1 (de) 1991-07-04
GB2239541A (en) 1991-07-03
IL95208A0 (en) 1991-06-10
FR2656728A1 (fr) 1991-07-05
GB2239541B (en) 1994-05-18
GB9014808D0 (en) 1990-08-22
JPH03203893A (ja) 1991-09-05

Similar Documents

Publication Publication Date Title
US6191969B1 (en) Selective match line discharging in a partitioned content addressable memory array
US4344156A (en) High speed data transfer for a semiconductor memory
US6105106A (en) Computer system, memory device and shift register including a balanced switching circuit with series connected transfer gates which are selectively clocked for fast switching times
US5060230A (en) On chip semiconductor memory arbitrary pattern, parallel test apparatus and method
US5257236A (en) Static RAM
US6359813B1 (en) Semiconductor memory device having improved data transfer rate without providing a register for holding write data
EP0162083B1 (en) Glitch lockout circuit for memory array
US5305261A (en) Semiconductor memory device and method of testing the same
US5546355A (en) Integrated circuit memory having a self-timed write pulse independent of clock frequency and duty cycle
US6078542A (en) Semiconductor memory device implementing multi-bank configuration with reduced number of signal lines
US6175533B1 (en) Multi-port memory cell with preset
US20080101132A1 (en) Memory output circuit and method thereof
US5235543A (en) Dual port static memory with one cycle read-modify-write
US6556482B2 (en) Semiconductor memory device
JPH01138694A (ja) メモリ装置
US4200917A (en) Quiet column decoder
US20230223075A1 (en) Pseudo-triple-port sram datapaths
US4742487A (en) Inhibit and transfer circuitry for memory cell being read from multiple ports
US6373764B2 (en) Semiconductor memory device allowing static-charge tolerance test between bit lines
US11398274B2 (en) Pseudo-triple-port SRAM
US7027347B2 (en) Semiconductor memory device
US6487132B2 (en) Integrated circuit memory devices having multiple input/output buses and precharge circuitry for precharging the input/output buses between write operations
US7187570B2 (en) Content addressable memory architecture providing improved speed
EP0473819A1 (en) Multiport memory cell
IL95208A (he) זכרון נייח דו-בבי בעל מחזור תפעול קרא-שנה-כתוב יחיד

Legal Events

Date Code Title Description
KB Patent renewed
KB Patent renewed
KB Patent renewed
MM9K Patent not in force due to non-payment of renewal fees