IL88257A - Method and apparatus for detecting infrared radiation - Google Patents

Method and apparatus for detecting infrared radiation

Info

Publication number
IL88257A
IL88257A IL88257A IL8825788A IL88257A IL 88257 A IL88257 A IL 88257A IL 88257 A IL88257 A IL 88257A IL 8825788 A IL8825788 A IL 8825788A IL 88257 A IL88257 A IL 88257A
Authority
IL
Israel
Prior art keywords
infrared radiation
detecting infrared
detecting
radiation
infrared
Prior art date
Application number
IL88257A
Other languages
English (en)
Other versions
IL88257A0 (en
Original Assignee
Santa Barbara Res Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Res Center filed Critical Santa Barbara Res Center
Publication of IL88257A0 publication Critical patent/IL88257A0/xx
Publication of IL88257A publication Critical patent/IL88257A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/28—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using photoemissive or photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound

Landscapes

  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
IL88257A 1987-11-23 1988-11-02 Method and apparatus for detecting infrared radiation IL88257A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12384287A 1987-11-23 1987-11-23

Publications (2)

Publication Number Publication Date
IL88257A0 IL88257A0 (en) 1989-06-30
IL88257A true IL88257A (en) 1992-05-25

Family

ID=22411220

Family Applications (1)

Application Number Title Priority Date Filing Date
IL88257A IL88257A (en) 1987-11-23 1988-11-02 Method and apparatus for detecting infrared radiation

Country Status (5)

Country Link
EP (1) EP0345343B1 (ja)
JP (1) JP2528191B2 (ja)
DE (1) DE3883526T2 (ja)
IL (1) IL88257A (ja)
WO (1) WO1989005043A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002213108A1 (en) * 2000-10-13 2002-04-22 Litton Systems Inc. Monolithic lead-salt infrared radiation detectors
EP1667239A4 (en) 2003-09-09 2008-08-06 Asahi Kasei Emd Corp INFRARED SENSOR IC, INFRARED SENSOR AND MANUFACTURING METHOD THEREFOR
GB2433648A (en) * 2005-12-21 2007-06-27 Durham Scient Crystals Ltd Radiation detector formed by deposition of bulk semiconductor crystal layers
EP3570325B1 (en) 2017-01-12 2020-10-28 Mitsubishi Electric Corporation Infrared sensor substrate and infrared sensor device
CN110620164B (zh) * 2019-09-25 2021-06-08 中国科学院半导体研究所 基于二维层状半导体材料的偏振光探测器及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2049507C3 (de) * 1970-10-08 1979-11-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Lichtempfindliche Halbleiteranordnung
US4053919A (en) * 1976-08-18 1977-10-11 The United States Of America As Represented By The Secretary Of The Air Force High speed infrared detector
US4313127A (en) * 1980-03-06 1982-01-26 Hughes Aircraft Company Signal detection method for IR detector having charge readout structure
US4559695A (en) * 1981-03-27 1985-12-24 U.S. Philips Corporation Method of manufacturing an infrared radiation imaging device
GB2095905B (en) * 1981-03-27 1985-01-16 Philips Electronic Associated Infra-red radiation imaging devices and methods for their manufacture
JPS5984467A (ja) * 1982-11-06 1984-05-16 Mitsubishi Electric Corp モノリシツク赤外線電荷転送素子
US4549195A (en) * 1983-04-14 1985-10-22 Westinghouse Electric Corp. Heterojunction semiconductor device
US4614960A (en) * 1983-07-15 1986-09-30 Westinghouse Electric Corp. Focal plane array
EP0288792A1 (en) * 1983-08-31 1988-11-02 Texas Instruments Incorporated Method for forming vias in HgCdTe
JP2505767B2 (ja) * 1986-09-18 1996-06-12 キヤノン株式会社 光電変換装置の製造方法

Also Published As

Publication number Publication date
DE3883526D1 (de) 1993-09-30
JP2528191B2 (ja) 1996-08-28
EP0345343A1 (en) 1989-12-13
DE3883526T2 (de) 1994-03-03
WO1989005043A1 (en) 1989-06-01
IL88257A0 (en) 1989-06-30
EP0345343B1 (en) 1993-08-25
JPH02502326A (ja) 1990-07-26

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Legal Events

Date Code Title Description
KB Patent renewed
HC Change of name of proprietor(s)
RH1 Patent not in force