DE3883526D1 - Verfahren und vorrichtung zur detektion von infrarotstrahlung. - Google Patents
Verfahren und vorrichtung zur detektion von infrarotstrahlung.Info
- Publication number
- DE3883526D1 DE3883526D1 DE89901495T DE3883526T DE3883526D1 DE 3883526 D1 DE3883526 D1 DE 3883526D1 DE 89901495 T DE89901495 T DE 89901495T DE 3883526 T DE3883526 T DE 3883526T DE 3883526 D1 DE3883526 D1 DE 3883526D1
- Authority
- DE
- Germany
- Prior art keywords
- infrared radiation
- detecting infrared
- detecting
- radiation
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/28—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using photoemissive or photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12384287A | 1987-11-23 | 1987-11-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3883526D1 true DE3883526D1 (de) | 1993-09-30 |
DE3883526T2 DE3883526T2 (de) | 1994-03-03 |
Family
ID=22411220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89901495T Expired - Fee Related DE3883526T2 (de) | 1987-11-23 | 1988-10-28 | Verfahren und vorrichtung zur detektion von infrarotstrahlung. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0345343B1 (de) |
JP (1) | JP2528191B2 (de) |
DE (1) | DE3883526T2 (de) |
IL (1) | IL88257A (de) |
WO (1) | WO1989005043A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2002213108A1 (en) * | 2000-10-13 | 2002-04-22 | Litton Systems Inc. | Monolithic lead-salt infrared radiation detectors |
EP1667239A4 (de) | 2003-09-09 | 2008-08-06 | Asahi Kasei Emd Corp | Infrarot-sensor-ic, infrarot-sensor und herstellungsverfahren dafür |
GB2433648A (en) * | 2005-12-21 | 2007-06-27 | Durham Scient Crystals Ltd | Radiation detector formed by deposition of bulk semiconductor crystal layers |
US10847567B2 (en) | 2017-01-12 | 2020-11-24 | Mitsubishi Electric Corporation | Infrared sensor device including infrared sensor substrate and signal processing circuit substrate coupled to each other |
CN110620164B (zh) * | 2019-09-25 | 2021-06-08 | 中国科学院半导体研究所 | 基于二维层状半导体材料的偏振光探测器及其制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2049507C3 (de) * | 1970-10-08 | 1979-11-08 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Lichtempfindliche Halbleiteranordnung |
US4053919A (en) * | 1976-08-18 | 1977-10-11 | The United States Of America As Represented By The Secretary Of The Air Force | High speed infrared detector |
US4313127A (en) * | 1980-03-06 | 1982-01-26 | Hughes Aircraft Company | Signal detection method for IR detector having charge readout structure |
US4559695A (en) * | 1981-03-27 | 1985-12-24 | U.S. Philips Corporation | Method of manufacturing an infrared radiation imaging device |
GB2095905B (en) * | 1981-03-27 | 1985-01-16 | Philips Electronic Associated | Infra-red radiation imaging devices and methods for their manufacture |
JPS5984467A (ja) * | 1982-11-06 | 1984-05-16 | Mitsubishi Electric Corp | モノリシツク赤外線電荷転送素子 |
US4549195A (en) * | 1983-04-14 | 1985-10-22 | Westinghouse Electric Corp. | Heterojunction semiconductor device |
US4614960A (en) * | 1983-07-15 | 1986-09-30 | Westinghouse Electric Corp. | Focal plane array |
EP0288792A1 (de) * | 1983-08-31 | 1988-11-02 | Texas Instruments Incorporated | Methode zum Erzeugen von Kontaktöffnungen in HgCdTe |
JP2505767B2 (ja) * | 1986-09-18 | 1996-06-12 | キヤノン株式会社 | 光電変換装置の製造方法 |
-
1988
- 1988-10-28 EP EP89901495A patent/EP0345343B1/de not_active Expired - Lifetime
- 1988-10-28 DE DE89901495T patent/DE3883526T2/de not_active Expired - Fee Related
- 1988-10-28 JP JP1501415A patent/JP2528191B2/ja not_active Expired - Lifetime
- 1988-10-28 WO PCT/US1988/003792 patent/WO1989005043A1/en active IP Right Grant
- 1988-11-02 IL IL88257A patent/IL88257A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
IL88257A0 (en) | 1989-06-30 |
EP0345343B1 (de) | 1993-08-25 |
EP0345343A1 (de) | 1989-12-13 |
JPH02502326A (ja) | 1990-07-26 |
WO1989005043A1 (en) | 1989-06-01 |
JP2528191B2 (ja) | 1996-08-28 |
DE3883526T2 (de) | 1994-03-03 |
IL88257A (en) | 1992-05-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |