IL88131A - Zener diode emulation and method of forming the same - Google Patents

Zener diode emulation and method of forming the same

Info

Publication number
IL88131A
IL88131A IL88131A IL8813188A IL88131A IL 88131 A IL88131 A IL 88131A IL 88131 A IL88131 A IL 88131A IL 8813188 A IL8813188 A IL 8813188A IL 88131 A IL88131 A IL 88131A
Authority
IL
Israel
Prior art keywords
forming
same
zener diode
diode emulation
emulation
Prior art date
Application number
IL88131A
Other languages
English (en)
Other versions
IL88131A0 (en
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL88131A0 publication Critical patent/IL88131A0/xx
Publication of IL88131A publication Critical patent/IL88131A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
IL88131A 1987-11-23 1988-10-24 Zener diode emulation and method of forming the same IL88131A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/124,231 US4910158A (en) 1987-11-23 1987-11-23 Zener diode emulation and method of forming the same

Publications (2)

Publication Number Publication Date
IL88131A0 IL88131A0 (en) 1989-06-30
IL88131A true IL88131A (en) 1993-03-15

Family

ID=22413598

Family Applications (1)

Application Number Title Priority Date Filing Date
IL88131A IL88131A (en) 1987-11-23 1988-10-24 Zener diode emulation and method of forming the same

Country Status (6)

Country Link
US (1) US4910158A (ko)
EP (1) EP0348473A1 (ko)
JP (1) JPH02502325A (ko)
KR (1) KR920005129B1 (ko)
IL (1) IL88131A (ko)
WO (1) WO1989005041A1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5063166A (en) * 1988-04-29 1991-11-05 Sri International Method of forming a low dislocation density semiconductor device
US5276350A (en) * 1991-02-07 1994-01-04 National Semiconductor Corporation Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits
US5241213A (en) * 1991-07-30 1993-08-31 Harris Corporation Buried zener diode having auxiliary zener junction access path
US6096756A (en) * 1992-09-21 2000-08-01 Albert Einstein College Of Medicine Of Yeshiva University Method of simultaneously enhancing analgesic potency and attenuating dependence liability caused by morphine and other bimodally-acting opioid agonists
CA2392510A1 (en) * 1999-11-30 2001-06-07 Corixa Corporation Compositions and methods for therapy and diagnosis of breast cancer
WO2001042813A1 (fr) * 1999-12-07 2001-06-14 Matsushita Electric Industrial Co., Ltd. Detecteur de rayons x
US20040024004A1 (en) * 2001-05-04 2004-02-05 Sherman Barry M. Novel compositions and methods for enhancing potency or reducing adverse side effects of opioid agonists
WO2003006980A1 (fr) * 2001-07-13 2003-01-23 Arkray, Inc. Appareil d'analyse, corps a element de perçage integralement installe pour un dispositif de mesure de la temperature associe a l'appareil d'analyse, et appareil de prelevement de liquide organique
CA2522471A1 (en) * 2003-04-14 2004-10-28 Pain Therapeutics, Inc. Methods for the treatment of pain comprising opioid antagonists
US20060009478A1 (en) * 2003-10-15 2006-01-12 Nadav Friedmann Methods for the treatment of back pain
US20060268479A1 (en) * 2005-05-31 2006-11-30 Atmel Germany Gmbh ESD protection structure
US20070170897A1 (en) * 2006-01-26 2007-07-26 Advanced Analogic Technologies, Inc. High-Frequency Power MESFET Buck Switching Power Supply

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
US4079402A (en) * 1973-07-09 1978-03-14 National Semiconductor Corporation Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface
NL7513161A (nl) * 1975-11-11 1977-05-13 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze.
JPS60106178A (ja) * 1983-11-15 1985-06-11 Toshiba Corp 化合物半導体素子のゲ−ト回路
US4651178A (en) * 1985-05-31 1987-03-17 Rca Corporation Dual inverse zener diode with buried junctions
JPS62117369A (ja) * 1985-11-18 1987-05-28 Fujitsu Ltd ヘテロ接合バイポ−ラトランジスタ
JPS62209868A (ja) * 1986-03-10 1987-09-16 Rohm Co Ltd 半導体装置の製造方法
US4683483A (en) * 1986-05-05 1987-07-28 Burr-Brown Corporation Subsurface zener diode and method of making
JPS62283672A (ja) * 1986-06-02 1987-12-09 Nec Corp 電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
EP0348473A1 (en) 1990-01-03
US4910158A (en) 1990-03-20
IL88131A0 (en) 1989-06-30
WO1989005041A1 (en) 1989-06-01
KR920005129B1 (ko) 1992-06-26
KR890702256A (ko) 1989-12-23
JPH02502325A (ja) 1990-07-26

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Legal Events

Date Code Title Description
RH Patent void