IL83988A - Shared current loop,multiple field apparatus and process for plasma processing - Google Patents

Shared current loop,multiple field apparatus and process for plasma processing

Info

Publication number
IL83988A
IL83988A IL83988A IL8398887A IL83988A IL 83988 A IL83988 A IL 83988A IL 83988 A IL83988 A IL 83988A IL 8398887 A IL8398887 A IL 8398887A IL 83988 A IL83988 A IL 83988A
Authority
IL
Israel
Prior art keywords
plasma processing
current loop
field apparatus
multiple field
shared current
Prior art date
Application number
IL83988A
Other languages
English (en)
Other versions
IL83988A0 (en
Original Assignee
Mcnc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mcnc filed Critical Mcnc
Publication of IL83988A0 publication Critical patent/IL83988A0/xx
Publication of IL83988A publication Critical patent/IL83988A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
IL83988A 1986-10-06 1987-09-23 Shared current loop,multiple field apparatus and process for plasma processing IL83988A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/916,007 US4738761A (en) 1986-10-06 1986-10-06 Shared current loop, multiple field apparatus and process for plasma processing

Publications (2)

Publication Number Publication Date
IL83988A0 IL83988A0 (en) 1988-02-29
IL83988A true IL83988A (en) 1991-03-10

Family

ID=25436555

Family Applications (1)

Application Number Title Priority Date Filing Date
IL83988A IL83988A (en) 1986-10-06 1987-09-23 Shared current loop,multiple field apparatus and process for plasma processing

Country Status (7)

Country Link
US (1) US4738761A (de)
EP (1) EP0265105A1 (de)
JP (1) JPS63104332A (de)
CN (1) CN1011933B (de)
CA (1) CA1282840C (de)
IL (1) IL83988A (de)
MX (1) MX160179A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223613A (ja) * 1988-07-12 1990-01-25 Tokyo Ohka Kogyo Co Ltd プラズマ反応装置
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
DE4106770C2 (de) * 1991-03-04 1996-10-17 Leybold Ag Verrichtung zum reaktiven Beschichten eines Substrats
US5226967A (en) * 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
JPH0950992A (ja) * 1995-08-04 1997-02-18 Sharp Corp 成膜装置
CH696013A5 (de) * 2002-10-03 2006-11-15 Tetra Laval Holdings & Finance Vorrichtung zur Behandlung eines bandförmigen Materials in einem Plasma-unterstützten Prozess.
US6879109B2 (en) * 2003-05-15 2005-04-12 Axcelis Technologies, Inc. Thin magnetron structures for plasma generation in ion implantation systems
WO2015112661A1 (en) * 2014-01-23 2015-07-30 Isoflux Incorporated Open drift field sputtering cathode

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3627663A (en) * 1968-03-25 1971-12-14 Ibm Method and apparatus for coating a substrate by utilizing the hollow cathode effect with rf sputtering
US3860507A (en) * 1972-11-29 1975-01-14 Rca Corp Rf sputtering apparatus and method
US4155825A (en) * 1977-05-02 1979-05-22 Fournier Paul R Integrated sputtering apparatus and method
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
DE2941559C2 (de) * 1979-10-13 1983-03-03 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Verfahren zum Abscheiden von Silizium auf einem Substrat
JPS5687672A (en) * 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
US4361749A (en) * 1980-02-04 1982-11-30 Western Electric Co., Inc. Uniformly cooled plasma etching electrode
US4252626A (en) * 1980-03-10 1981-02-24 United Technologies Corporation Cathode sputtering with multiple targets
JPS56152973A (en) * 1980-04-30 1981-11-26 Tokuda Seisakusho Ltd Sputter etching device
DE3165961D1 (en) * 1980-05-12 1984-10-18 Fujitsu Ltd Method and apparatus for plasma etching
US4361472A (en) * 1980-09-15 1982-11-30 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source
US4434038A (en) * 1980-09-15 1984-02-28 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source
DE3107914A1 (de) * 1981-03-02 1982-09-16 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum beschichten von formteilen durch katodenzerstaeubung
JPS57149734A (en) * 1981-03-12 1982-09-16 Anelva Corp Plasma applying working device
US4362611A (en) * 1981-07-27 1982-12-07 International Business Machines Corporation Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield
US4465575A (en) * 1981-09-21 1984-08-14 Atlantic Richfield Company Method for forming photovoltaic cells employing multinary semiconductor films
US4472259A (en) * 1981-10-29 1984-09-18 Materials Research Corporation Focusing magnetron sputtering apparatus
US4392932A (en) * 1981-11-12 1983-07-12 Varian Associates, Inc. Method for obtaining uniform etch by modulating bias on extension member around radio frequency etch table
US4525262A (en) * 1982-01-26 1985-06-25 Materials Research Corporation Magnetron reactive bias sputtering method and apparatus
US4422896A (en) * 1982-01-26 1983-12-27 Materials Research Corporation Magnetically enhanced plasma process and apparatus
NL8202092A (nl) * 1982-05-21 1983-12-16 Philips Nv Magnetronkathodesputtersysteem.
DE3378508D1 (en) * 1982-09-10 1988-12-22 Nippon Telegraph & Telephone Plasma deposition method and apparatus
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
US4417968A (en) * 1983-03-21 1983-11-29 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US4428816A (en) * 1983-05-25 1984-01-31 Materials Research Corporation Focusing magnetron sputtering apparatus
JPS6075589A (ja) * 1983-09-30 1985-04-27 Toshiba Corp ドライエツチング装置
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
JPS6094724A (ja) * 1983-10-28 1985-05-27 Anelva Corp ドライエツチング装置
DE163445T1 (de) * 1984-05-17 1986-05-22 Varian Associates, Inc., Palo Alto, Calif. Magnetron-zerstaeubungs-vorrichtung mit ebenen und konkaven auftreffplatten.
EP0162643B1 (de) * 1984-05-17 1989-04-12 Varian Associates, Inc. Zerstäubungs-Beschichtungs-Quelle mit mehreren ringförmigen Auftreffplatten
DE3434698A1 (de) * 1984-09-21 1986-04-03 The University Of British Columbia, Vancouver, British Columbia Planarmagnetron-sputtereinrichtung
US4572759A (en) * 1984-12-26 1986-02-25 Benzing Technology, Inc. Troide plasma reactor with magnetic enhancement

Also Published As

Publication number Publication date
EP0265105A1 (de) 1988-04-27
CN1011933B (zh) 1991-03-06
US4738761A (en) 1988-04-19
JPS63104332A (ja) 1988-05-09
IL83988A0 (en) 1988-02-29
MX160179A (es) 1989-12-18
CN87106755A (zh) 1988-06-15
CA1282840C (en) 1991-04-09

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Legal Events

Date Code Title Description
MM9K Patent not in force due to non-payment of renewal fees